44results about How to "Simplify the crafting process" patented technology

The invention relates to a neutral pen core capable of being repeatedly filled with ink. An annular boss is arranged at the top end of a pen core head; the two sides of the bottom end of the annular boss respectively correspond to a hermetically connected seal head and a fixed column head; an ink inlet is arranged in the middle of the seal head; an ink injecting pipe is connected between the seal head and the fixed column head; one end adjacent to the fixed column head in the ink injecting pipe is connected with one end of a spring, and the other end of the spring is connected with a gasket; the outer surface of the gasket is connected with a hermetical column head; the hermetical column head is matched with a hermetical ink inlet; the pipe wall of the ink injecting pipe is provided with an ink outlet; a plurality of through holes are arranged at the periphery of the gasket; and pasters are placed in a pen core barrel. The invention has the advantages of simple structure, low production cost, simple manufacturing processes and good tightness, can effectively prevent air from entering the pen core head in the ink filling process, improves the writing quality, achieves the purpose of being repeatedly filled with ink, and effectively prevents the disposable waste of a neutral pen and prevents the environment from being polluted.

The invention provides a method for manufacturing a thin film transistor. The method comprises the steps of sequentially depositing a gate insulating layer and a gate metal layer on a semiconductor substrate; forming a first photoresistance pattern on the gate metal layer, etching the gate metal layer uncovered with the first photoresistance pattern so as to form a gate electrode, wherein the width of the gate electrode is smaller than that of the first photoresistance pattern; taking the first photoresistance pattern as a mask to perform primary ion implantation on the semiconductor substrate so as to form a preparatory source / drain; etching the side wall of the first photoresistance pattern so as to form a second photoresistance pattern, wherein the width of the second photoresistance pattern is smaller than that of the first photoresistance pattern; taking the second photoresistance pattern as a mask, and performing secondary ion implantation on the semiconductor substrate, so as to form a source / drain, wherein the source / drain comprises a heavy doping drain region and a light doping drain region.

The invention relates to a curvilinear circular polarizer and belongs to the technical field of communication to solve the problem in the prior art that a printed board has a large number of layers, and is complicated to manufacture and high in processing cost. The curvilinear circular polarizer includes an upper curvilinear gate layer and a lower curvilinear gate layer arranged in parallel from top to bottom. The lower curvilinear gate layer is used for receiving a linearly polarized wave where an electric field vector and the lower curvilinear gate layer plane have an intersection angle of 45 degrees, and generating a linearly polarized electric field vector 1 around the linearly polarized wave. The linearly polarized wave passes through the lower curvilinear gate layer and the upper curvilinear gate layer from bottom to top. The upper curvilinear gate layer is used for receiving the linearly polarized wave, generating a linearly polarized electric field vector 2 having a phase difference of 90 degrees with the linearly polarized electric field vector 1, and generating a left-handed or right-handed circularly polarized wave over the upper curvilinear gate layer. The curvilinear circular polarizer has a wide band, low profile, low loss, low cost, high circular polarization fineness, simple structure, light weight, less accessory structure, and is easy to process and assemble.

The invention provides a three-dimensional electrode pattern manufacturing method. The three-dimensional electrode pattern manufacturing method comprises the following steps: manufacturing a graphical mask layer and graphical photoresist respectively on the front face of a substrate, wherein the graphical photoresist is formed on the graphical mask layer; etching the substrate to form a groove structure; corroding the graphical mask layer; deposting an electrode film layer and a protective film metal layer in sequence, wherein the graphical mask layer and the electrode film layer are made of a same material; peeling off the graphical photoresist as well as the electrode film layer and the protective film metal layer deposited on the graphical photoresist; corroding the graphical mask layer to obtain a three-dimensional electrode pattern. According to the method, the manufacturing of the three-dimensional electrode pattern is realized by adopting a peeling-off technology, special adhesive spraying equipment is not required to be bought, the manufacturing process is simple, and the pattern manufacturing precision is high.