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30results about How to "Reduce high temperature time" patented technology

In-situ combustion layered ignition method

The invention provides an in-situ combustion layered ignition method. The method includes the steps that a casing pipe is landed into an oil well and extends to the well bottom; a thermal insulation pipe is landed into the casing pipe and a first annular space is formed between the thermal insulation pipe and the casing pipe; the first annular space is sealed through a first packer and a second packer, so that an upper-layer gas injection space and a lower-layer gas injection space are formed; an upper-layer gas distribution device located in the upper-layer gas injection space is arranged on the thermal insulation pipe; a Pupin oil pipe is landed into the thermal insulation pipe, a second annular space is formed between the Pupin oil pipe and the thermal insulation pipe, and an enhanced heat transfer device is arranged in the second annular space; an electric ignition device is landed in an inner cavity of the Pupin oil pipe; air is injected in the inner cavity and the second annular space and nitrogen is injected into the first annular space; the electric ignition device is started; heated gas in the thermal insulation pipe is injected into the upper-layer gas injection space through the upper-layer gas distribution device and an upper oil layer is heated and ignited; heated gas in the Pupin oil pipe is injected into the lower-layer gas injection space through the tail end of the Pupin oil pipe and a lower oil layer is heated and ignited.
Owner:PETROCHINA CO LTD

Low-temperature deodorization and high-temperature deacidification process capable of inhibiting trans-fatty acid of peanut oil

The invention discloses a low-temperature deodorization and high-temperature deacidification process capable of inhibiting trans-fatty acid of peanut oil. The process specifically comprises the following steps: (1) degumming; (2) de-coloring; (3) carrying out low-temperature deodorization; (4) carrying out high-temperature deacidification. A packing tower is additionally arranged behind a plate tower of a deodorization and deacidification process, and an alkali refining neutralization reaction section is removed; oil is uniformly distributed in a thin film form and a manner of directly adding saturated steam from the bottom is adopted to effectively remove undesirable odor; high-temperature time of an oil product is shortened; two sets of packing deacidification towers are additionally arranged, wherein the temperature of the #1 deacidification tower is controlled to be 260 DEG C and is used for instantly distilling to remove a large part of acid value, and the temperature of the #2 deacidification tower is controlled to be 265 DEG C and is used for removing the acid value in the oil again, so that the acid value of finished-product oil is reasonably controlled; furthermore, the time of staying at a high-temperature section of the oil is short, the content of the trans-fatty acid is only increased by 0.2 percent to 0.3 percent and the acid value can be controlled to be about 0.1; the alkali refining neutralization section is removed so that the loss of neutral oil is reduced and the yield is improved; the consumption is reduced by about 0.03 percent to 0.05 percent by one acid value; meanwhile, a plasticizer and the acid value in the oil product can be effectively removed.
Owner:青岛天祥食品集团有限公司

Method for manufacturing selective emitter structure with low surface concentration and soft doped zone

A method for manufacturing a selective emitter structure with low surface concentration and a soft doped zone includes the steps that (1) the surface of a substrate to be prepared is corroded and cleaned, and the surface of the substrate is completely dried after cleaning; (2) the clean substrate prepared in the step (1) is soaked in a solution with high oxidability to carry out wet chemical oxidation on the surface of a silicon wafer, and then the surface of the substrate is completely dried; (3) a microcosmic salt aqueous solution of 0.5-20% is deposited on the surface of the substrate in a spin coating and spraying mode, and then the surface of the substrate is dried; (4) phosphorus ink or silicon ink is deposited on an electrode area on the surface of the substrate coated with a phosphorus source in the step (3) in a screen printing mode, and then the surface of the substrate is dried; (5) the temperature of a diffusion furnace rises, nitrogen is introduced into a diffusion quartz tube, when the temperature reaches 780-890 DEG C, the clean substrate prepared in the step (4) is placed into a constant-temperature area of the diffusion quartz tube, a fire door of the diffusion furnace is sealed, and after the temperature of the diffusion furnace is stable, oxygen is introduced into the diffusion quartz tube; (6) the substrate is taken out and cooled after the diffusion process is over.
Owner:INST OF ELECTRICAL ENG CHINESE ACAD OF SCI +1

Dielectrically isolated integrated circuit silicon chip and preparation method thereof

The invention mainly relates to a preparation method of a dielectric isolation silicon chip. An N-type / P-type dielectric isolation integrated circuit silicon chip is mainly characterized in that the integrated circuit silicon chip is provided with an N-type / P-type substrate silicon chip (1) and an N-type / P-type silicon monocrystal layer (6); a sandwiched oxide layer (2) is arranged on the N-type / P-type substrate silicon chip (1); a buried layer (3) is arranged inside the silicon monocrystal layer (6); the silicon monocrystal layer (6) is separated into mutually insulated isolation cubic blocks through silicon dioxide (5), polysilicon (4) and the sandwiched oxide layer (2). The invention also discloses a preparation method of the N-type / P-type dielectric isolation integrated circuit silicon chip; and the method comprises the steps of buried layer preparation, patching, grinding, polishing and grooving. Because the high-temperature time is greatly shortened in the preparation, the crystal structure is more integrated and the process control is more accurate, and high-performance circuits with special requirements can be produced. The resistivity of the single chip is appropriately increased, so that high (power)-voltage circuits can be produced with a certain power output.
Owner:TIANSHUI HUATIAN MICROELECTRONICS

Dielectrically isolated integrated circuit extending wafer and preparation method thereof

The invention mainly relates to a dielectric isolation epitaxial wafer and a preparation method thereof. The N-shaped / P-shaped dielectric isolation integrated circuit epitaxial wafer comprises N-shaped / P-shaped monocrystalline silicon (1) with backing material. A sandwich oxide layer (2) is arranged on the monocrystalline silicon (1). The invention is mainly characterized in that the dielectric isolation epitaxial wafer further comprises an N-shaped / P-shaped silicon epitaxial layer (6); a buried layer (3) is arranged in the silicon epitaxial layer (6); the silicon epitaxial layer (6) is divided into mutually-insulating isolation blocks by silicon dioxide (5), polysilicon (4) and the sandwich oxide layer (2). The invention also discloses a preparation method of the N-shaped / P-shaped dielectric isolation integrated circuit epitaxial wafer. The preparation method comprises the following steps: preparing a silicon chip on an insulating body, preparing the buried layer with low resistance, extending outwardly, notching, growing the silicon dioxide and the polysilicon, and polishing. Because the high temperature time is shortened greatly during the preparation, the invention has the advantages of more complete crystal structure and more accurate process control, and can be used for manufacturing circuits with high performance and special requirements.
Owner:TIANSHUI HUATIAN MICROELECTRONICS

A kind of layered ignition method of burning oil layer

The invention provides an in-situ combustion layered ignition method. The method includes the steps that a casing pipe is landed into an oil well and extends to the well bottom; a thermal insulation pipe is landed into the casing pipe and a first annular space is formed between the thermal insulation pipe and the casing pipe; the first annular space is sealed through a first packer and a second packer, so that an upper-layer gas injection space and a lower-layer gas injection space are formed; an upper-layer gas distribution device located in the upper-layer gas injection space is arranged on the thermal insulation pipe; a Pupin oil pipe is landed into the thermal insulation pipe, a second annular space is formed between the Pupin oil pipe and the thermal insulation pipe, and an enhanced heat transfer device is arranged in the second annular space; an electric ignition device is landed in an inner cavity of the Pupin oil pipe; air is injected in the inner cavity and the second annular space and nitrogen is injected into the first annular space; the electric ignition device is started; heated gas in the thermal insulation pipe is injected into the upper-layer gas injection space through the upper-layer gas distribution device and an upper oil layer is heated and ignited; heated gas in the Pupin oil pipe is injected into the lower-layer gas injection space through the tail end of the Pupin oil pipe and a lower oil layer is heated and ignited.
Owner:PETROCHINA CO LTD

Preparation method of selective emitter structure in lightly doped region with low surface concentration

A method for manufacturing a selective emitter structure with low surface concentration and a soft doped zone includes the steps that (1) the surface of a substrate to be prepared is corroded and cleaned, and the surface of the substrate is completely dried after cleaning; (2) the clean substrate prepared in the step (1) is soaked in a solution with high oxidability to carry out wet chemical oxidation on the surface of a silicon wafer, and then the surface of the substrate is completely dried; (3) a microcosmic salt aqueous solution of 0.5-20% is deposited on the surface of the substrate in a spin coating and spraying mode, and then the surface of the substrate is dried; (4) phosphorus ink or silicon ink is deposited on an electrode area on the surface of the substrate coated with a phosphorus source in the step (3) in a screen printing mode, and then the surface of the substrate is dried; (5) the temperature of a diffusion furnace rises, nitrogen is introduced into a diffusion quartz tube, when the temperature reaches 780-890 DEG C, the clean substrate prepared in the step (4) is placed into a constant-temperature area of the diffusion quartz tube, a fire door of the diffusion furnace is sealed, and after the temperature of the diffusion furnace is stable, oxygen is introduced into the diffusion quartz tube; (6) the substrate is taken out and cooled after the diffusion process is over.
Owner:INST OF ELECTRICAL ENG CHINESE ACAD OF SCI +1

A layered ignition device for burning oil layers

The invention discloses a layered ignition device for in-situ combustion. According to the layered ignition device for the in-situ combustion, an electric ignition device is arranged in a cavity of a Pupping oil pipe, an insulated pipe sleeves the Pupping oil pipe, and a casing sleeves the insulated pipe; the electric ignition device comprises an electric igniter cable and an electric igniter heating section, and the electric igniter cable is connected with a power supply; a first annular space forms between the casing and the insulated pipe; a second annular space forms between the insulated pipe and the Pupping oil pipe; a first packer and a second packer are arranged in the first annular space at intervals, and an upper gas filling space remains between the first packer and the second packer; an upper gas distribution device located in the upper gas filling space is arranged on the insulated pipe; a reinforced heat transfer device comprises a winding section and two contact sections; when the temperature of the Pupping oil pipe is lower than a preset value, the reinforced heat transfer device integrally winds the Pupping oil pipe, and when the temperature of the Pupping oil pipe is larger than or equal to the other preset value, the contact sections are supported to contact with the insulated pipe.
Owner:PETROCHINA CO LTD

Process for inhibiting low-temperature deodorization and high-temperature deacidification of peanut oil trans fatty acid

The invention discloses a low-temperature deodorization and high-temperature deacidification process capable of inhibiting trans-fatty acid of peanut oil. The process specifically comprises the following steps: (1) degumming; (2) de-coloring; (3) carrying out low-temperature deodorization; (4) carrying out high-temperature deacidification. A packing tower is additionally arranged behind a plate tower of a deodorization and deacidification process, and an alkali refining neutralization reaction section is removed; oil is uniformly distributed in a thin film form and a manner of directly adding saturated steam from the bottom is adopted to effectively remove undesirable odor; high-temperature time of an oil product is shortened; two sets of packing deacidification towers are additionally arranged, wherein the temperature of the #1 deacidification tower is controlled to be 260 DEG C and is used for instantly distilling to remove a large part of acid value, and the temperature of the #2 deacidification tower is controlled to be 265 DEG C and is used for removing the acid value in the oil again, so that the acid value of finished-product oil is reasonably controlled; furthermore, the time of staying at a high-temperature section of the oil is short, the content of the trans-fatty acid is only increased by 0.2 percent to 0.3 percent and the acid value can be controlled to be about 0.1; the alkali refining neutralization section is removed so that the loss of neutral oil is reduced and the yield is improved; the consumption is reduced by about 0.03 percent to 0.05 percent by one acid value; meanwhile, a plasticizer and the acid value in the oil product can be effectively removed.
Owner:青岛天祥食品集团有限公司
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