3 results about "Silicon disulfide" patented technology

The application discloses a quasi-solid-state sodium battery electrolyte and a preparation method and application thereof, and belongs to the technical field of sodium metal batteries. The quasi-solid-state sodium battery electrolyte provided by the application comprises a photocuring agent, a sodium ion electrolyte and a two-dimensional material; the two-dimensional material comprises one or more of fluorinated graphene, titanium nitride, boron nitride, silicon disulfide, tungsten disulfide and silicon carbide. The quasi-solid-state sodium battery electrolyte provided by the application has good mechanical strength and mechanical stability, can reduce the resistance of the quasi-solid-state sodium battery electrolyte, and improve the ionic conductivity; when the quasi-solid-state sodium battery electrolyte is applied to a sodium metal battery, the sodium metal battery has higher specific capacity under small and large rates, and can maintain long-time cycle stability.

The present invention provides a β-cesium cadmium silicon sulfide compound, a β-Cs2CdSi4S10 infrared nonlinear optical crystal, as well as their preparation methods and applications. The β-cesium cadmium silicon sulfide compound has a chemical formula β-Cs2CdSi4S10 and a molecular weight of 755.04. The β-Cs2CdSi4S10 infrared nonlinear optical crystal belongs to the tetragonal crystal system, its space group is I-4, and its unit cell parameters are: a=8.4233(7) Å, c=14.6136(12) Å, and the unit cell volume is 1036.86(19) Å3. The present invention adopts a vacuum packaging method to prepare a β-Cs2CdSi4S10 infrared nonlinear optical crystal. By using the kurtz-berry method, it was found that the frequency doubling effect of β-Cs2CdSi4S10 crystal is approximately 1.1-1.2 times that of AgGaS2(AGS). By using the UV-visible diffuse reflection, it was found that the β-Cs2CdSi4S10 crystal has the crystal bandgap of 4.21 eV, the UV cutoff edge of 254 nm, and the infrared transparency range greater than 13 μm. The preparation method of the β-Cs2CdSi4S10 infrared nonlinear optical crystal of the present invention is simple, with a short growth period, and avoids the leakage and contamination of raw materials. The β-Cs2CdSi4S10 infrared nonlinear optical crystal of the present invention can be used to fabricate conversion devices for high-power laser output applications and has important applications in atmospheric remote sensing and communication fields.