3results about How to "Reduce thermal gradient" patented technology

The invention provides carbonized aggregate, a carbonized product with high carbonization depth and a preparation method of the carbonized aggregate, and belongs to the technical field of carbon sequestration building materials.The preparation method comprises the following steps that solid waste raw materials, cement, silica fume, a thickening agent, a water reducing agent and water are evenly mixed and subjected to pouring forming, and a green body is obtained; and drying the green body until the water content is 13-20%, and carbonizing and curing to obtain the high-connectivity artificial carbonized aggregate. And stacking a plurality of high-connectivity artificial carbonized aggregates in a mold in advance, pouring the slurry into the mold, maintaining at 25 DEG C for 24 hours, demolding, carrying out microwave pretreatment, and then carrying out carbonization maintenance to obtain the carbonized product. According to the method for constructing the continuous carbon dioxide transportation network by using the high-connectivity artificial carbonized aggregate and the preset aggregate technology, the light high-strength carbonized product with the high carbonization depth is prepared, the compressive strength can reach 39.23 MPa after the carbonized product is carbonized for 1 day, the density is 1711 kg / m < 3 >, the carbonization degree is 43.27%, the carbonization uniformity depth is 50 mm, the carbon fixation amount is 356.2 kg / m < 3 >, and the pre-curing time is 4 h.

The application provides a semiconductor device with more uniform thermal stress distribution on the chip surface, which comprises a substrate of a first conductive type, a plurality of rows of units arranged along the longitudinal direction on the substrate, and a plurality of units arranged along the transverse direction in each row, wherein the units are active units, dummy units or dummy gate units; the active units, the dummy units and the dummy gate units are arranged in any proportion in the transverse direction and the longitudinal direction; the thermal stress on the surface of the semiconductor device is customized by adjusting the proportion of the active units, the dummy units and the dummy gate units in different regions or the length of the source region of the active units or the spacing of the units or the mesa width of the units. The semiconductor device adopts a non-repetitive unit structure layout, and the chip surface temperature is adjusted according to the designer's requirements by adjusting the unit layout or the unit structure; the thermal gradient on the chip surface can be reduced, the large thermal mechanical stress borne by the semiconductor package can be reduced, and the service life and reliability of the device and the interconnection structure thereof can be prolonged.

The utility model discloses a conductive ceramic low-temperature fast sintering furnace based on infrared radiation, which relates to the technical field of low-temperature sintering furnaces and comprises a furnace body and a furnace door, the furnace door is laterally and rotatably connected to the side wall of the furnace body, a base is arranged in the furnace body, a bearing piece is placed at the upper end of the base and comprises a bearing plate, and the bearing plate is arranged on the furnace body. A fixing frame is fixed to the upper end of the bearing plate. The utility model discloses a conductive ceramic low-temperature-speed sintering furnace based on infrared radiation. By forming the through holes in the frame and arranging the aluminum foil reflecting film on the side face of the fixing frame, the penetration and reflection effects of infrared radiation are enhanced, heat loss is reduced, and the sintering efficiency is improved; the distance between a clamping plate and a supporting rod of the adjusting assembly can be flexibly adjusted, small-size ceramics can be supported, large-size ceramics can be stably supported, and the applicability is improved; and the porous aluminum plate is adopted as the bearing plate, so that the heat gradient is reduced, and the cracking risk caused by uneven thermal stress of the ceramic is reduced.