The invention discloses an in situ modification method of electronic grade spherical packing. The in situ modification method comprises the steps that spherical packing with the average particle sizeD50 between 0.01 [mu]m and 60 [mu]m is selected, the spherical packing is led into a reaction vessel, igniting and spheroidization are conducted, cooling is conducted after spheroidization, when the temperature is cooled to 80 DEG C to 150 DEG C, a coupling agent is added into the spherical packing after spheroidization, the additive amount of the coupling agent accounts for 0.1% to 2% of the total weight of the spherical packing, and thus the spherical packing after modified in situ is prepared; and the coupling agent is one or more of hexamethyldisiloxane, polysiloxane, dihydroxydimethylsilane and a silane coupling agent. According to the in situ modification method, in the spheroidization and cooling processes of the spherical packing, the coupling agent is adopted to modify the spherical packing in situ by using residual heat, and thus the spherical inorganic packing modified in situ has excellent hydrophobic performance, good particle dispersion and excellent compatibility and binding force with organic resin.