53results about How to "Avoid short circuit current" patented technology

The invention relates to a method for realizing power distribution network closed loop and photovoltaic concentrated access by adopting flexible DC (direct current) power transmission. Two feeder lines are led out from each of two main transformers respectively and correspondingly; the four feeder lines are correspondingly connected to AC (alternating current) buses through connecting units respectively; in a flexible DC power transmission system, DC buses connected with DC boost ends of photovoltaic power generation modules are correspondingly arranged on two sides of a DC power transmission loop; during normal operation, the load, supplied by transformer substations, of the four feeder lines is smaller than or equal to 75% of the thermal stability limit power of a single feeder line, flexible DC converters in the flexible DC power transmission system operate as inverters, and the electric power sent out by the photovoltaic power generation modules are transmitted to 10 kilovolt feeder lines. According to the method, the power distribution reliability is high, the transformation is small, the comprehensive investment in inverters is reduced, and the method is suitable for an occasion with high requirement for power distribution reliability and needing grid connection of photovoltaic power stations.

The invention discloses an SEU (single event upset)/SET (single event transient)-resistant dynamic comparator, which comprises a pulse generating circuit based on a sensitive amplifier structure and an output latch circuit; the top of the whole comparator is provided with five input ports and four output ports outwards, the five input ports are respectively connected with clock signals, input signals and reference voltage signals, and the output ports are connected with data output signals; the pulse generating circuit is connected with the clock signals, the input signals, the reference voltage signals and the output latch circuit; and the output latch circuit is connected with the pulse generating circuit and the data output signals. The dynamic comparator has the advantages that the upset threshold LETth is greater than 500MeV/ (mg.cm2); the time delay is reduced while the high-speed low power consumption of the SEU/SET-resistant dynamic comparator same as that of a traditional dynamic comparator is achieved; the symmetrical arrangement, equal time delay and same drive capacity of complementary output terminals Q and QB are realized; by adopting the sensitive amplifier structure, the clock network is simple, reliable and small in load; and by adopting the minor clock swing technology, the power consumption is obviously reduced.

The invention relates to a 110 kV substation protection and control action cooperation strategy suitable for DG (distributed generation) accessing. The strategy includes the procedures: main transformer high-tension side protection is modified and matched with 110kV incoming line upstream opposing side protection to form pilot protection used for removing incoming line failures; after the main transformer high-tension side protection acts, communication with an information processing center is made, and the information processing center performs analysis according to action information of main transformer low-tension protection and action information of the main transformer high-tension side protection; reclosure of the main transformer high-tension side protection is modified; the reclosure of the main transformer high-tension side protection and another protection cooperate in such a manner that the protection action is accelerated after the reclosure; the reclosure is started in such a manner that the protection action starts; action time of the reclosure is later than action time of reclosure of a 110kV incoming line. The strategy has the advantages that power outage range can be narrowed, power outage time is shortened, the ability of the DG to supply electricity is given to full play, and reliability of power supply for a load is guaranteed.

The present invention provides a charging system for an electric vehicle, capable of preventing generation of a short-circuit current even if short circuit occurs at a vehicle side charging lead. A charging system (10) for an electric vehicle (12) is arranged on vehicle side charging leads (46p, 46n) between a vehicle side charging connector (30) and an electrical storage device (24), and has a diode (32) for preventing a backflow current from the electrical storage device (24) to a charging device (14).

A converter utilizing synchronous rectification comprises a first switch, a second switch connected in series to the first switch, and a gate drive circuit controlling each switch to switch to on/off-state using pulse-width modulation. Each switch includes a channel region that is conductive in both forward and reverse directions in on-state and is not conductive in the forward direction in off-state, and a unipolar diode region conductive only in the reverse direction. The gate drive circuit synchronizes output timing for signal with which the first switch switches to on-state with output timing for signal with which the second switch switches to off-state, and synchronizes output timing for signal with which the first switch switches to off-state with output timing for signal with which the second switch switches to on-state.

The present invention discloses an output circuit that is able to adjust the output voltage slew rate and avoid short-circuit current, comprising: a control circuit for receiving an input data and generating a first set of control signals based on the input data; an output control device consisting of a first field effect transistor (FET) connected in series with a second field effect transistor (FET) and the point of connection is the output end for generating an output signal; a first capacitor having one end connected to a first working voltage and generates a first control voltage by charging/discharging on another end to control the gate of the first field effect transistor; a first switch for controlling charging/discharging of the first capacitor device based on the first set of control signals; a first current source for providing charging current for the first capacitor device; a second capacitor having one end connected to a second working voltage and generates a second control voltage by charging/discharging on another end to control the gate of the second field effect transistor; a second switch for controlling charging/discharging of the second capacitor device based on the first set of control signal; and a second current source providing charging current for the second capacitor device. The present invention adjusts output voltage slew rate of the output circuit by adjusting the time constant of the first and second capacitor devices.

The invention discloses a solar cell probe calibration method for a lunar dust measurement instrument. By using the solar cell probe calibration method, a solar cell probe can be calibrated on the ground; the method is simple and reliable and can provide basis for IOT (in orbit test) of the lunar dust measurement instrument. According to the solar cell probe calibration method, a solar cell shading effect principle is utilized and the solar cell probe is calibrated by establishing a ground calibration device, simulating sunlight irradiation and lunar dust deposition on the solar cell, measuring a relation between a short circuit current of the solar cell probe and a quantity of deposited lunar dust and testing influence of different sunlight incidence angles. By utilizing the calibration result, the lunar dust measurement instrument can calculate the quantity of the deposited lunar dust according to the sunlight incidence angle and the short circuit current of the solar cell probe in the testing process. The ground calibration device adopted by the invention has a simple structure and higher testing accuracy.

The invention discloses a doping method. The doping method includes the steps a doping layer is formed on a substrate in an ion injection mode; a dielectric layer is formed on the doping layer; annealing processing is carried out on the substrate with the dielectric layer; the dielectric layer is removed through cleaning fluids. After the doping layer is formed through ion injection, the dielectric layer is formed, and accordingly the performance of a PN structure can be improved, the dielectric layer can reduce doping concentration of the surface of the substrate and facilitate repair of lattice defects, the defect density in an injection damage layer can be obviously reduced, impurities on the substrate can be absorbed to a certain extent and accordingly influences of the harmful impurities are reduced.

Provided is a household cooking device. A power input part (1) connected with a commercial power source, a current fuse (2) and a load circuit (4) for controlling the cooking device are connected in series to form a closed circuit. A first surge protection device (3a) and a second surge protection device (3b) in serial connection are connected in parallel with a series circuit of the power input part (1) and the current fuse (2). The surge protection voltage of the first surge protection device (3a) and the surge protection voltage of the second surge protection device (3b) are respectively below the common maximum voltage inputted from the power input part (1).

The invention relates to a method for manufacturing a nickel-based alloy plating layer. The method comprises the steps of polishing the inner wall of a sleeve, removing impurities and oxides, and wiping alcohol or acetone to remove oil stains; configuring welding equipment; configuring a welding rotary workbench, and fixing the sleeve to the welding rotary workbench; setting welding technological parameters; and conducting welding. The method is high in welding efficiency, high in welding seam quality, low in welding seam dilution rate and high in corrosion resistance. The invention further provides a processor and a medium. The processor is arranged on the welding equipment and used for executing instructions for manufacturing the nickel-based alloy plating layer. The medium is arranged in the processor and used for storing the instructions for manufacturing the nickel-based alloy plating layer. The processor and the medium are beneficial to achievement of automatic manufacturing of the nickel-based alloy plating layer.

The invention relates to a gate double-clamped IGBT device. The gate voltage clamping structure includes a third doped region located directly below the gate metal layer, a second doped region locatedin the third doped region, and a first doped region located in the second doped region. The first doping region is located in the first conductivity type drift region, the doping type of the first doping region is consistent with the doping type of the third doping region, and the doping type of the first doping region is different from the doping type of the second doping region. The first dopedregion is in ohmic contact with the gate metal layer, and the third doped region is in ohmic contact with the emitter metal. The invention has a compact structure, reduces the influence of the gate electrode of the IGBT device by the high peak of the positive and negative gate voltage, avoids the short-circuit current sharply increasing when the gate voltage is too high, and leads to the burnoutof the IGBT device, and is safe and reliable.

A plasma display apparatus using a drive circuit. The drive circuit includes: first and second P-channel MOS transistors connected with a first voltage; a first N-channel MOS transistor connected between the first P-channel MOS transistor and a ground voltage, and having a gate connected with a first node and configured to receive a first input signal; and a second N-channel MOS transistor connected between the second P-channel MOS transistor and the ground voltage and having a gate connected with a second node and configured to receive a second input signal. An output P-channel MOS transistor is connected between the first voltage and an output node and has a gate connected with the second node, and an output N-channel MOS transistor is connected between the output node and the second voltage and has a gate supplied with an input signal having a same polarity as that of the first input signal. A P-channel MOS transistor has a source connected with the first node, a drain connected with the output node, and a gate connected with the second node.

The invention provides a voltage changer and a voltage changing system. A first circuit of the voltage changer outputs a common voltage on one of a first output end and a second output end according to an input signal and a received common voltage; a second current circuit conducts one, which does not receive the common voltage, of a third output end and a fourth output end to a second voltage according to a received triggering signal; and a switch circuit selects one of a third connection end and a fourth connection end to output the triggering signal according to the common voltage received by one of a first connection end and a second connection end and a bias voltage received by a bias voltage connection end so that a second current circuit coupled with the connection end outputting the triggering signal boosts the voltage of the output end which dose not output the common voltage to a second voltage. By using the voltage changer and the voltage changing system, the triggering signal restricts the conduction degree of the second current circuit, and the current drive capability can be enhanced with no need of increasing the distribution area, thereby effectively shortening the distribution area and reducing short-circuit current.

The invention discloses a baffling type ammonia-nitrogen wastewater advanced denitrification device and method. The device comprises a chlorine salt adjusting tank, an electrochlorination denitrification reaction tank and a pH adjusting tank which are connected sequentially, wherein chlorine salt can be added to the chlorine salt adjusting tank as required to adjust the concentration of chloride ions; baffling components are arranged in the electrochlorination denitrification reaction tank, the wastewater staying time can be prolonged, meanwhile, DSA polar plate groups are arranged, gaps amongpolar plates are filled with 3D particle electrodes, and the available chlorine production efficiency of an electrochlorination reactor can be enhanced. According to the electrochlorination advanceddenitrification device, by use of active chlorine produced by electrochlorination, ammonia nitrogen is finally oxidized into nitrogen to be removed, and no ammonium salt, nitrate or other byproducts can be produced; the continuous flow denitrification efficacy can be enhanced through the 3D electrodes and the baffling design of the electrochlorination denitrification reaction tank, advanced denitrification is realized, the operation is simple, and the problem of high ammonia-nitrogen content of effluent from the tail end of wastewater treatment can be solved.

The invention relates to an apparatus for supplying electrical power to an electric motor, having a first controllable switching arrangement (101), which is designed to provide a first current path to the power supply in a first switching state and interrupt the first current path in a second switching state, having a second controllable switching arrangement (103), which is coupled to the first controllable switching arrangement and is designed to provide a second current path for current consumption in a first switching state and to interrupt the second current path in a second switching state, and having a control device (117) for changing the first controllable switching arrangement (101) and the second controllable arrangement (103) to the first switching state or to the second switching state, with the control device (117); being designed to change the second switching arrangement (103) to the first switching state when or after the first switching arrangement (101) is changed to the second switching state.

The invention relates to a micromechanical z-axis inertial sensor (100), comprising: at least one first vibration mass element (10a); and-a torsion spring element (11a... 11n, 12a... 12n) connected to the first vibration mass element (10a); wherein-first torsion spring elements (11a... 11n) are each connected to the substrate (1), and second torsion spring elements (12a... 12n) are each connected to the first vibratory mass elements (10a); wherein-the first and the second torsion spring elements (11a... 11n, 12a... 12n) are each connected to one another by means of a lever element (13a... 13n), said lever element (13a... 13n) being designed to stop on a stop element (3a... 3n). The invention also relates to a method for producing a micromechanical z-axis inertial sensor (100).

The present invention relates to a submodule (1) for a converter in the high-voltage range with a reduced risk of cross-ignition. The submodule has a first and a second energy storage means (3, 4) which are connected in series, a first and a second semiconductor series circuit (13, 15) which are respectively connected in parallel with the first (3) and the second (4) energy storage means and which comprise a first (6) and a second (7), and respectively a third (9) and a fourth (10), power semiconductor switching unit which can be switched on and switched off, a first connection terminal (20) which is connected to a first potential point between the first and the second power semiconductor switching unit (6, 7), a second connection terminal (21) which is connected to a second potential point between the third and the fourth power semiconductor unit (9, 10). The invention proposes arranging a connecting switching unit (8) between the first and the second semiconductor series circuit (15), arranging a first connecting branch (14) with a first connecting branch diode (17) between the first potential point and the potential point between the energy storage means (3, 4), and arranging a second connecting branch (16) with a second connecting branch diode (18) between the second potential point and the potential point between the energy storage units (3, 4), wherein the connecting branch diodes (18, 19) are oriented in opposite directions to one another.