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47results about How to "High electrical breakdown strength" patented technology

Polytetrafluoroethylene nanoparticle-filled composite tortuous porous membrane material and preparation method and application thereof

The invention discloses a polytetrafluoroethylene nanoparticle (PTFE-NP)-filled composite tortuous porous membrane material. With polyimide (PI) nanofiber nonwoven fabric as a base material, holes of the base materials are filled with polytetrafluoroethylene nanoparticles (PTFE-NPs); the PTFE-NPs are 100-300nm in diameter and account for 30%-60% of total weight of the composite tortuous porous membrane material; and the PI nanofiber nonwoven fabric is electrospinning PI nanofiber nonwoven fabric of which the thickness is 9-38 microns, the porosity is 60%-80% and the fiber diameters are less than 0.5 micron. The nano composite tortuous porous membrane material disclosed by the invention has the advantages of high temperature resistance, heat shrinkage resistance, high voltage impact resistance, high current impact resistance and mechanical impact resistance, and is suitable for manufacturing various high-capacity and high-power lithium batteries or super capacitors as a safe battery diaphragm and a safe super capacitor diaphragm. The invention further provides a preparation method of the nano composite tortuous porous membrane material and an application of the composite tortuous porous membrane material as a battery diaphragm.
Owner:JIANGXI NORMAL UNIV

Epoxy resin encapsulating material and preparation thereof

The invention discloses an epoxy resin encapsulating material, which is characterized by comprising 40 to 60 weight portions of EP828 epoxy resin or E51 epoxy resin, 80 to 130 weight portions of platy alpha Al2O3 ceramic powder, 5 to 10 weight portions of coupling agent - gamma-(2,3-epoxy propoxide) propyl trimethoxy silane, 8 to 12 weight portions of curing agent 590 and 0.1 to 1.5 weight portions of plasticizer - di-n-octyl phthalandione. The invention also discloses a method for preparing the epoxy resin encapsulating material, which comprises: firstly, dissolving the coupling agent into ethanol, adding the platy alpha Al2O3 ceramic powder into a mixture under the condition of stirring, and preparing alumina powder; and secondly, adding the plasticizer into the epoxy resin, uniformly mixing the plasticizer and the epoxy resin, adding the alumina powder into a mixture, performing mixing and degasification, adding the curing agent into the mixture, and performing vacuum defoamation and curing to obtain the epoxy resin encapsulating material. By adoption of the platy alpha Al2O3 ceramic powder as filler, the dielectric loss tangent value of the obtained material is reduced from 0.11 in the prior art to 0.02, and the electric breakdown strength is improved from 10kV.m<-1> in the prior art to 84-102kV.m<-1>.
Owner:NORTHWESTERN POLYTECHNICAL UNIV

Preparation method for germanium substrate and La-based high-dielectric constant gate dielectric material

The invention discloses a preparation method for a germanium substrate and La-based high-dielectric constant gate dielectric material. The problems of low dielectric constant and poor thermal stability and thin film compactness of the conventional material are mainly solved. The gate dielectric material comprises an interface layer (1), a barrier layer (2), an La-based high-dielectric constant thin film (3) and a protective layer (4) from bottom to top, wherein the interface layer (1) is made from 0.5 to 1nm thick GeO2; the barrier layer (2) is made from 0.5 to 2nm thick Al2O3; the La-based high-dielectric constant thin film (3) is made from 1 to 10nm thick La2O3 or LaAlO3 or HfLaOx; and the protective layer (4) is made from 1 to 2nm thick Al2O3. The whole material is prepared by an atomic layer deposition method, and is subjected to low-temperature and high-temperature annealing treatment after being prepared. The germanium substrate and La-based high-dielectric constant gate dielectric material has the advantages of high dielectric constant, high thin film compactness, high step coverage, high thermal stability and low surface roughness, and can be used for manufacturing a gate dielectric film of a metal oxide semiconductor field effect transistor.
Owner:XIDIAN UNIV

Zirconium oxide particles filled composite multi-curved-porous membrane material, and preparation method and application therefor

The invention discloses a nanocomposite multi-curved-porous membrane material. The nanocomposite multi-curved-porous membrane material takes polyimide (PI) nanofiber non-woven fabric as a base material, and nanometer zirconium dioxide (ZrO2) particles are filled in pores of the base material; the diameter of the nanometer ZrO2 particles is 50-100 nm, and the weight of the nanometer ZrO2 particles is 30-50% of the total weight of the nanocomposite multi-curved-porous membrane material; the thickness of the PI nanofiber non-woven fabric is 9-38 um, and the porosity is 60-80%. The nanocomposite multi-curved-porous membrane material has high-temperature resistance, thermal shrinkage resistance, high voltage and high current impact resistance, and mechanical collision resistance, so that the nanocomposite multi-curved-porous membrane material is suitable for being used as safety battery membranes and safety supercapacitor members for manufacturing various high-capacity and high-power lithium batteries or supercapacitors. The invention further provides a preparation method for the nanocomposite multi-curved-porous membrane material, and an application of the nanocomposite multi-curved-porous membrane material in being used as the battery membranes.
Owner:JIANGXI XIAN CAI NANOFIBERS TECH

Three-layer structure lead zirconate titanate ferroelectric ceramic material and preparation method thereof

The invention discloses a three-layer structure lead zirconate titanate ferroelectric ceramic material and a preparation method thereof. The three-layer structure lead zirconate titanate ferroelectric ceramic material is of a sandwich structure, wherein a core layer of the material is a porous lead zirconate titanate ceramic layer, and the porosity of the core layer is 5-30%; the upper surface and lower surface of the material are compact lead zirconate titanate ceramic layers. The preparation method comprises the following steps: (a) respectively preparing porous lead zirconate titanate ceramic powder and compact lead zirconate titanate ceramic powder; (b) adding the porous lead zirconate titanate ceramic powder to the middle layer of a mold divided into three layers of space by using membranes, adding the compact lead zirconate titanate ceramic powder to the upper surface and lower surface of the mold, removing the membranes, briquetting and demolding; (c) removing plastic, sintering, machining and carrying out silver electrode firing, thus obtaining the ceramic material. The ceramic material provided by the invention has the advantages of high electric breakdown strength, low loss property of compact ceramics and the shock resistance of porous ceramics, so that the reliability and safety of the ferroelectric ceramic material in a pulse power supply are optimized.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI

Pulse power supply system and neutron generator

The invention relates to a pulse power supply system and a neutron generator. Several paths of pulse voltages with different pulse widths and amplitudes can be provided for the neutron generator through four paths of pulse voltages, namely positive acceleration high voltage, negative acceleration high voltage, anode voltage and trigger voltage, so as to meet the working requirements of a vacuum arc ion source neutron generator. The positive acceleration high voltage is generated through the first secondary coil of a first pulse transformer T1, the trigger voltage is generated through a second pulse transformer T2, the anode voltage is generated through the second secondary coil of a first pulse transformer T1 and a main discharge capacitor C4, and the negative acceleration high voltage is generated through a third pulse transformer T3. The second secondary coil of the first pulse transformer T1 and the second pulse transformer T2 serve as a boosting transformer to boost a pulse power supply and also serve as an isolation transformer to solve the problem of suspension voltage, the insulation distance is effectively reduced by adopting a positive and negative acceleration pole structure, and three pulses form a loop to share one charging power supply, so the power supply system is very compact in structure.
Owner:中科石金(安徽)中子技术有限公司

Cold-contraction type electric fluorosilicone sleeve and application thereof

The invention discloses a cold-contraction type electric fluorosilicone sleeve and application thereof. The sleeve is prepared through enabling a -Si-CH=CH2 group in organic polyfluorosilicone and a -Si-H group in organic hydrogen-containing polyfluorosilicone to be subjected to hydrogen-silicon addition reaction in the presence of a noble metal catalyst, and then, carrying out continuous extrusion and vulcanization. According to the cold-contraction type electric fluorosilicone sleeve and the application thereof, the sleeve can be mounted without heating, is low in permanent deformation and can fully meet requirements as long as the inside diameter of a cable accessory is smaller than the outside diameter of a cable insulation by 2mm, and the vulcanization for the product is safe and non-toxic and is free of generation of waste gases, waste water and waste residues; and after vulcanization, the product has excellent expanding tear resistance, insulating performance, tracking resistance, acid/base resistance and ultraviolet resistance, is applicable to the terminal connection of various cables in cable lines and forms an electric power transmission network together with the cables so as to guarantee the connection of cable terminals.
Owner:广东中蓝硅氟新材料有限公司

Preparation method of la-based high dielectric constant gate dielectric material based on germanium substrate

The invention discloses a preparation method for a germanium substrate and La-based high-dielectric constant gate dielectric material. The problems of low dielectric constant and poor thermal stability and thin film compactness of the conventional material are mainly solved. The gate dielectric material comprises an interface layer (1), a barrier layer (2), an La-based high-dielectric constant thin film (3) and a protective layer (4) from bottom to top, wherein the interface layer (1) is made from 0.5 to 1nm thick GeO2; the barrier layer (2) is made from 0.5 to 2nm thick Al2O3; the La-based high-dielectric constant thin film (3) is made from 1 to 10nm thick La2O3 or LaAlO3 or HfLaOx; and the protective layer (4) is made from 1 to 2nm thick Al2O3. The whole material is prepared by an atomic layer deposition method, and is subjected to low-temperature and high-temperature annealing treatment after being prepared. The germanium substrate and La-based high-dielectric constant gate dielectric material has the advantages of high dielectric constant, high thin film compactness, high step coverage, high thermal stability and low surface roughness, and can be used for manufacturing a gate dielectric film of a metal oxide semiconductor field effect transistor.
Owner:XIDIAN UNIV

SOI substrate-based La-based high-dielectric constant gate dielectric structure and manufacturing method thereof

The invention discloses an SOI substrate-based high-dielectric constant gate dielectric material, and aims at mainly solving the problems of a low dielectric constant, poor heat stability and thin film compactness and the like of an existing gate dielectric material. The gate dielectric material comprises an SOI substrate (1), a barrier layer (2), an La-based high-dielectric constant thin film (3) and a protective layer (4) from bottom to top, wherein Al2O3 of which the thickness is 0.5-4nm is adopted by the barrier layer (2); La2O3 or LaAlO3 or HfLaOx of which the thickness is 1-10nm is adopted by the La-based high-dielectric constant thin film (3); and Al2O3 of which the thickness is 1-4nm is adopted by the protective layer (4). The whole gate dielectric is prepared by adopting an atomic layer deposition method and the technology is compatible with an existing CMOS technology. The SOI substrate-based high-dielectric constant gate dielectric material has the advantages of a high dielectric constant, good thin film compactness and step coverage, good heat stability and small surface roughness, and can be used for manufacturing of a metal oxide semiconductor field effect transistor.
Owner:XIDIAN UNIV

Dry composite foams as electrically insulating materials

The present invention relates to an insulation device comprising an insulator having a chamber and an electrically insulating material in the chamber wherein the electrically insulating material comprises a dry composite foam. The invention also relates to a method of using the dry composite foam as an electrically insulating material and for manufacturing an electrically insulating device, comprising (a) providing an insulator having a chamber, (b1) either provides a mixture of at least polymer-based thermally expandable microhollow spheres in an expanded state and polymer-based thermally expandable microhollow spheres in an unexpanded state, (b2) either provides a mixture of at least two types of polymer-based thermally expandable microhollow spheres in an unexpanded state, the at least two types of thermally expandable microhollow spheres have different temperature ranges of expansion, and (c) foaming the mixture consisting of the thermally expandable microhollow spheres by heat treatment at a temperature in the range between 50 DEG C and 200 DEG C to form a dry composite foam as an electrically insulating material, the cavity of the insulating body is either filled with a mixture of thermally expandable micro-hollow spheres and foamed there, or the cavity of the insulating body is filled with the dry composite foam obtained by first foaming the mixture of thermally expandable micro-hollow spheres and the cavity of the insulating body is filled with the mixture of thermally expandable micro-hollow spheres.
Owner:MASCHFAB REINHAUSEN GEBR SCHEUBECK GMBH & CO KG
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