44results about How to "Reduce stress relaxation" patented technology

An improved SIV resistance and an improved EM resistance are achieved in the coupling structure containing copper films. A semiconductor device includes: a semiconductor substrate; a second insulating layer formed on or over the semiconductor substrate; a second barrier metal film, formed on the second insulating film, and being capable of preventing copper from diffusing into the second insulating film; and an electrically conducting film formed on the second barrier metal film so as to be in contact with the second barrier metal film, and containing copper and carbon, wherein a distribution of carbon concentration along a depositing direction in the second electrically conducting film includes a first peak and a second peak.

A method of improving the mechanical properties of polymers is described. The method involves heat treating the polymer at a temperature below the glass transition temperature in a wet or in a dry environment. Polymer articles capable of moisture uptake in humid environments, as well as polymer articles less susceptible to moisture uptake, have improved mechanical properties, particularly improved stress relaxation behavior and set properties, when treated in accord with the heat treatment method.

A semiconductor device which includes a semiconductor chip, an insulating film formed on the semiconductor chip, a plurality of projected stress relaxation materials formed on the insulating film, projected electrodes covering at least tops of the stress relaxation materials, and wiring lines for electrically connecting the projected electrodes and element electrodes of the semiconductor chip.

The invention belongs to the nonferrous metals processing industry, and particularly relates to a preparing method capable of improving strength and toughness of Cu-Ni-Si alloy. The process comprisesthe steps of semi-continuous casting ingot casting, casting ingot heating, hot rolling, solid-solution treatment (1), face milling, cold rolling (1), side cutting, annealing, cold rolling (2), solid-solution treatment (2), cold rolling (3), solid-solution treatment (3), cold rolling (4), cleaning, aging heat treatment, cleaning, stretching and straightening and slitting. According to the solid-solution treatment (1), the solid-solution temperature ranges from 700 to 850 DEG C, and the cooling strength is larger than 20 DEG C/s; according to annealing, the temperature ranges from 480 to 650 DEGC, and the heat preservation time ranges from four to eight hours; according to solid-solution treatment (2) (3), the solid-solution temperature ranges from 700 to 780 DEG C, the solid-solution timeranges from 90 to 150 s, and the cooling strength is larger than 10 DEG C/s; according to aging heat treatment, the temperature ranges from 400 to 500 DEG C, and the heat preservation time ranges from4 to 8 hours; and according to cold rolling (1) (2) (3) (4), the machining rate ranges from 20 to 85%. The method has the advantages that HV is 225 to 250, Rm is larger than or equal to 690 MPa, Rp0.2 is larger than or equal to 660 MPa, A50 is larger than or equal to 10%, and a strip is bent by 90 degrees and is free of cracking.

In sophisticated semiconductor devices, the initial strain component of a globally strained semiconductor layer may be substantially preserved during the formation of shallow trench isolations by using a rigid mask material, which may efficiently avoid or reduce a deformation of the semiconductor islands upon patterning the isolation trenches. Consequently, selected regions with high internal stress levels may be provided, irrespective of the height-to-length aspect ratio, which may limit the application of globally strained semiconductor layers in conventional approaches. Furthermore, in some illustrative embodiments, active regions of substantially relaxed strain state or of inverse strain type may be provided in addition to the highly strained active regions, thereby enabling an efficient process strategy for forming complementary transistors.

The invention discloses a high-strength graphene and rare-earth aluminium alloy. The grapheme and rare-earth aluminium alloy comprises an aluminium alloy matrix and graphene. The composition of the aluminium alloy matrix comprises, by mass, 1.2-1.8% of Cu, 0.18-0.25% of Si, 0.08-0.2% of Cr, 0.6-0.8% of Mg, 0.1-0.2% of Mn, 0.3-0.4% of Fe, 0.3-0.5% of Zn, 0.02-0.06% of Ti, 0.1-0.2% of V, 0.1-0.2% of Ni, 0.04-0.07% of Mo, 0.05-0.12% of Zr, 0.04-0.08% of Nd, 0.04-0.06% of La, 0.03-0.05% of Ce, and the balance Al. The high-strength graphene and rare-earth aluminium alloy has good mechanical properties such as strength, toughness and the like.

The invention relates to an aircraft engine lip low-half section drawing forming method. According to a part theoretical model design drawing forming process model, the process model comprises a convex molded surface and flange edges on the two sides, the upper portion of the convex molded surface is coincident with a part theoretical model, the lower portion of the convex molded surface is an extending supplement face, and the supplement face is composed of a theoretical model tangential extending face and a flange edge vertical extending face; center lines of rolling ribs are designed on theflange edges on the two sides of the process model; a die comprises a female die, edge pressing rings and a male die; the edge pressing rings are matched with the flange edges of the process model, and the upper surfaces of the edge pressing rings are provided with the rolling ribs corresponding to the protruding center lines; the female die is provided with a molding cavity, and a butt joint face of the female die and the edge pressing ring is provided with rolling grooves corresponding to the rolling ribs; and the convex molded surface is the same as a convex molded surface of the process model.

Disclosed are enhanced methods and elastomeric compression structures utilizing embedded gas-filled gas-filled polymeric microspheres that are expanded in predefined conditions that are usable in electrical components for reducing stress relaxation.

The invention discloses a high-strength column type electric porcelain insulator for a high-voltage line and a manufacturing process of the high-strength column type electric porcelain insulator, and belongs to the field of insulators, the high-strength column type electric porcelain insulator comprises a porcelain body and a metal accessory, an adhesive layer is arranged between the metal accessory and the porcelain body, and the adhesive layer comprises the following raw materials in parts by weight: 50-90 parts of an inorganic cementing material and 1-20 parts of an elastomer, wherein the inorganic cementing material contains a nano oxide, a pore passage is formed in the elastomer, and the nano oxide is adsorbed in the pore passage. According to the invention, the elastomer is added into the inorganic cementing material, so that on one hand, the cementing strength of the inorganic cementing material can be enhanced, cracks are prevented from being generated after use, and the service life is prolonged; on the other hand, due to the excellent elastic performance of the elastomer, stress relaxation generated after the gel layer is used for a long time can be reduced, and the loosening phenomenon of the porcelain body and the metal accessory after long-time use is avoided.

The invention discloses a waterproof elastic sealing gasket for a segment joint of a shield tunnel. The waterproof elastic sealing gasket is characterized in that the waterproof elastic sealing gasketcomprises a silicon foam inner core and an ethylene-propylene-diene monomer (EPDM) rubber outer tire wrapping the silicon foam inner core. During using, two pieces of elastic sealing gaskets are pasted in waterproof inserting grooves in two adjacent segments in a mirror symmetry mode correspondingly, and the sealing gaskets are extruded after the segments are spliced, so that the silicon foam inner cores contracts and produce contact stress, thus EPDM rubber is mutually fitted and extruded, and a waterproof sealing function is achieved accordingly. Compared with a single-component EPDM through hole rubber sealing gasket commonly used in the existing engineering technology field, the waterproof sealing gasket with the additionally-arranged silicon foam inner core has the advantages of uniform contact stress, close fitting, long-term load maintaining ability, high elasticity recovery ability and the like, the stress relaxation phenomenon of the waterproof sealing gasket under the long-term pressure can be effectively reduced. The waterproof elastic sealing gasket has great value for long-term waterproof performance of the shield tunnel.

The invention discloses a water-stop sealing gasket capable of being melted and injected with glue for multiple times, a duct piece, a duct piece ring and a construction method. The sealing gasket capable of being injected with glue comprises a rubber main body, wherein a glue injection hole channel is formed in the rubber main body, a hot melting coil is arranged in the glue injection hole channel, reserved hole channels capable of ensuring that the rubber main body is compressible are reserved in the two sides of the glue injection hole channel, and an expansion water absorption layer is arranged on an outer ring of the rubber main body; and the rubber main body is also provided with a glue outlet hole communicated with the glue injection hole channel. The water-stop sealing gasket capable of being injected with glue is arranged on an inner layer of an annular and longitudinal joint surface of a segment, and a common sealing gasket is normally arranged on an outer layer of the jointsurface. After a segment tunnel operates, if water leakage occurs due to the fact that the water stopping performance of the outer-layer sealing gasket is reduced, an inner-layer sealing gasket glue injection and water stopping program is started. High-temperature water stop glue is injected into a sealing gasket channel and seeps outwards along the glue outlet hole, and when the temperature is reduced to 45 DEG C or below, the liquid glue becomes solid rubber, and the water stop effect is achieved.

The invention provides boron-containing aluminosilicate glass capable of realizing rapid ion exchange, and the boron-containing aluminosilicate glass not only has high inherent damage resistance, but also has high ion exchange kinetics and rapid exchange capability. The boron-containing aluminosilicate glass comprises the following components in percentage by mole: 54 to 68 percent of SiO2, 12 to 20 percent of Al2O3, 0 to 12 percent of B2O3, 12 to 20 percent of Na2O, 0 to 5 percent of K2O and 0 to 6 percent of RO, the molar percentage of B2O3 is not 0; the RO is one or more of MgO, ZnO and CaO; M(B2O3)-[M (Na2O) + M (K2O)-M (Al2O3)] is greater than 1mol%; [M (Na2O) + M (K2O) + M (MgO)]/M (Al2O3) is greater than 1 and less than 1.4; and M represents the molar percentage of the corresponding component.

Provided is a laminate sheet in which a first sheet, a PSA layer and a second sheet are laminated in this order. Of the first and second sheets, at least one is a release liner having a release face on the side facing the PSA layer. The PSA layer has a thickness of 200 μm or greater. The first sheet has a tensile modulus of 1000 MPa or greater and the second sheet has a tensile modulus of 500 MPa or less.

The invention relates to the technical field of underground engineering materials, in particular to improved anchor rod mortar for a high-ground-temperature tunnel support. The improved anchor rod mortar is prepared from 680-730 parts of cement, 150-200 parts of a gel material, 450-500 parts of water, 450-500 parts of lightweight aggregates, 5-10 parts of an additive and 130 parts of jute fiber. The anchor rod mortar provided by the invention is capable of effectively improving the high temperature resistance of the mortar, and effectively reducing the stress relaxation of an anchor rod so as to form effective supporting under a long-time high-temperature condition after being coagulated. The improved anchor rod mortar has the characteristics of high temperature resistance, high tenacity, high anti-compression, anti-pull and anti-bending capabilities and the like. Furthermore, the mortar is favorable in proportion and workability and has less possibility of blocking a pipe during a pumping process, the anchor rod injection efficiency is improved, blockage phenomena during mortar pumping are effectively reduced, and the mortar still has reliable performance under the long-term high-temperature condition; in addition, the improved anchor rod mortar is low in cost, and has favorable economical efficiency; municipal sludge pottery sand, calcium carbonate whiskers and the jute fiber are new green and environment-friendly materials and are free from toxicity and pollution, so that the adverse influence caused by construction material pollution is reduced to a great extent.

The invention relates to new materials, belongs to the non-ferrous metal processing industry, and particularly relates to a preparation method for reducing the hot shrinkage rate of a Cu-Ni-Si alloy. According to the method, the hot shrinkage rate of the Cu-Ni-Si alloy is reduced so as to meet the requirements for materials applied to high-angle lead frames and image electronic components. The preparation method for reducing the hot shrinkage rate of the Cu-Ni-Si alloy comprises the process steps of semi-continuous ingot casting, ingot heating, hot rolling, first solution treatment, surface milling, first cold rolling, edge cutting, first aging annealing, cleaning, second cold rolling, second solution annealing, third cold rolling, third aging annealing, cleaning, fourth cold rolling, cleaning, withdrawal and straightening and slitting in sequence. According to the method, technical treatment is carried out on the basis of a traditional process, on the premise of ensuring the properties of high strength, high elasticity, medium conductivity, low stress relaxation and the like of the material, different solid solution plus aging heat treatment plus cold rolling plus finishing treatment processes are adopted, the density change in recovery and recrystallization is controlled, and the hot shrinkage rate of the product is reduced.

The invention discloses a sunken ship salvage umbilical cable which is suitable for salvage of seaborne large sunken ships and sunken objects. The sunken ship salvage umbilical cable comprises a cable core which is formed by twisting two stainless steel seamless pipes with extruded thermoplastic elastomer protection layers and a digital communication paired cable, and a stainless steel wire braid layer which wraps the exterior of the cable core, wherein the digital communication paired cable comprises a paired cable core, and a digital communication paired cable sheath and another stainless steel wire braid layer which sequentially wrap the exterior of the paired cable core from inside to outside and are used to seal water. The sunken ship salvage umbilical cable is used cooperatively with a deepwater and underwater guiding mud penetrator, and can be practically used for achieving the purpose of salvaging the seaborne large sunken ships and the seaborne large sunken objects.

The invention provides a method for controllably limiting epitaxy of a source drain on a gate-all-around device, which comprises the following steps of: forming a plurality of fin structures arranged along a first direction on a substrate, forming a plurality of false gate structures arranged along a second direction on the plurality of fin structures, and enabling each false gate structure to stretch across each fin structure in the plurality of fin structures; etching the fin structure to form a plurality of source/drain cavities; forming a first isolation layer arranged along the first direction between the adjacent fin structures so as to isolate source/drain cavities between the adjacent fin structures; extending a source/drain layer in the source/drain cavity; and removing the first isolation layer. The thickness of the source/drain layer can be limited within the critical thickness of stress release, so that the stress relaxation phenomenon caused by mismatch and dislocation is reduced; certainly, by limiting the thickness of the source/drain layer, the area of the contact surface between the source/drain layer and the grid electrode can be limited, so that the stray capacitance is limited.