Embodiments of the present invention are directed to a substrate for performing ionization desorption on porous silicon, methods for performing such ionization desorption and methods of making substrates. One embodiment directed to a substrate for performing ionization desorption on silicon comprises a substrate having a surface having a formula of:
As used above, X is H or Y, where at least at least twenty five mole percent of X is Y and Y is hydroxyl, or —O—R1 or O—SiR1,R2,R3 wherein R1,R2, and R3 are selected from the group consisting C1 to C6 straight, cyclic, or branched alkyl, aryl, or alkoxy group, a hydroxyl group, or a siloxane group, and R6 may be a C1 to C36 straight, cyclic, or branched alkyl (e.g., C18, cyanopropyl), aryl, or alkoxy group, where the groups of R6 are unsubstituted or substituted with one or more moieties such as halogen, cyano, amino, diol, nitro, ether, carbonyl, epoxide, sulfonyl, cation exchanger, anion exchanger, carbamate, amide, urea, peptide, protein, carbohydrate, and nucleic acid functionalities. The letter “n” represents an integer from 1 to infinity and any vacant valences are silicon atoms, hydrogen or impurities.