The invention discloses a method for regulating and controlling the lattice structure and the
physical property of
perovskite oxide based on
oxygen vacancy, and the prepared
perovskite oxide film has the continuous regulation and control characteristic of anisotropic
physical property compared with the conventional directly grown
perovskite oxide film. The method has important application value in the fields of
magnetism,
electricity,
optics and the like of perovskite oxide thin
film material regulation and control. The method comprises the following steps: firstly, controlling the growth
oxygen pressure of the perovskite oxide thin film, so that the thin film is subjected to lattice expansion and relaxation at high temperature and
low oxygen pressure; after growth, the perovskite oxide film is subjected to low-temperature annealing in
oxygen to fill oxygen vacancies and repair
crystal lattices, so that the unit
cell volume is reduced. The in-plane lattice is constrained by the substrate, so that the out-plane
lattice constant is obviously shrunk. Finally, the obtained perovskite oxide thin film realizes anisotropic continuous regulation and control of the lattice structure and the
physical property under the condition of keeping relatively high
crystal quality. According to the invention, through an innovative'
oxygen vacancy introduction-
elimination 'process
route, a new way is provided for regulating and controlling the
anisotropy of the physical property of the perovskite oxide film.