The invention relates to the technical field of
bitter gourd high-temperature-resistant material screening, and particularly discloses a
bitter gourd high-temperature-resistant material
screening method which comprises the following steps: 1, establishing a multi-stage dynamic high-
temperature stress system, and simulating natural high-temperature fluctuation and a subtropical day and night
temperature difference environment in two stages of a
bitter gourd seedling stage and a flowering stage to obtain a multi-stage dynamic high-
temperature stress system; the defect that traditional constant-
temperature stress cannot reflect the real
heat resistance of the field is overcome; step 2, establishing an
evaluation system for high-temperature-resistant screening of bitter gourds from field morphological damage (heat damage index and leaf withering rate), photosynthetic response (
photosystem efficiency and net photosynthetic rate) in plants and
oxidative stress (MDA content and SOD / CAT activity). According to the
screening method of the bitter
gourd high-temperature-resistant material, linkage molecular markers are developed on the basis of the precisely identified heat-resistant
gene, early-stage rapid screening of the bitter
gourd high-temperature-resistant material is achieved, the breeding efficiency is remarkably improved, and the breeding period is shortened.