36results about How to "Inhibit redistribution" patented technology

The invention discloses a nitride high-mobility transistor with aluminum-gallium-nitride compound insertion layers for a strain balance. The nitride high-mobility transistor comprises a substrate, a GaN buffer layer, an Al<y>Ga<1-y>N insertion layer, an Al<x>Ga<1-x>N barrier layer and a GaN cap layer, wherein the GaN buffer layer is located on the substrate; the Al<y>Ga<1-y>N insertion layer is located on the GaN buffer layer; the Al<x>Ga<1-x>N barrier layer is opposite to the GaN buffer layer and is located on the Al<y>Ga<1-y>N insertion layer; the GaN cap layer is located on the Al<x>Ga<1-x>N barrier layer; the GaN cap layer and partial thickness of the Al<x>Ga<1-x>N barrier layer are removed to form grooves; inverted L-shaped source electrode and drain electrode are provided in the grooves respectively; and a gate electrode is located between the source electrode and the drain electrode. According to the other embodiment of the invention, an Al<z>Ga<1-z>N insertion layer is also formed between the Al<x>Ga<1-x>N barrier layer and the GaN cap layer. The aluminum-gallium-nitride compound / gallium nitride high-electron mobility transistor has the advantages that the performance of the AlN insertion layer is achieved by high-Al component AlGaN insertion layers; the processing controllability is relatively high; formation of an ohmic contact is facilitated by introduced inverted L-shaped source electrode and drain electrode; and meanwhile, the overall stress of an epitaxial layer can be relatively well controlled by combining the GaN cap layer, so that the performance is optimized when the reliability of the device is ensured.

The invention provides a three-directional movement decoupling periodic structure for a vibrating table model box. The periodic structure is formed by sequentially overlapping n periodic structure units, each periodic structure unit is formed by sequentially overlapping a first side limiting layer, a plane decoupling layer, a second side limiting layer and an elastic layer, n is a positive integerlarger than or equal to 2, the section shapes of the first side limiting layer, the plane decoupling layer, the second side limiting layer and the elastic layer are the same, and the periodic structure is used for three-directional movement decoupling under seismic oscillation conditions. The invention further provides a three-directional movement decoupling model box for vibrating table tests. The model box is composed of the periodic structure, a model box bottom plate and a limiting protection door type frame through combination. The model box is light in weight, high in strength and suitable for super gravity and normal gravity vibration table tests; it is ensured through multiple measures that the movements of the model box and a test soil body are synchronous, the movements in the X-direction, the Y-direction and the Z-direction between the model box and the test soil body do not interfere with one another, no additional acting force is generated by the model box on the test soil body and a boundary effect is avoided as much as possible; three-directional movement decoupling can be well realized, and prototype site characteristics are restored.

The invention provides a double-fin type channel double-gate multifunctional field effect transistor and a preparation method thereof, which belong to the technical field of metal oxide semiconductor field effect transistors in VLSI. The field effect transistor is based on a bulk silicon substrate; the channel is two identical fin-shaped fins with rectangular cross-sections, forming a double-fin-shaped channel; the outer side of each fin-shaped channel is a gate oxide and a front gate, and the inner side is a Tunneling oxide layer, silicon nitride trap layer, blocking oxide layer and back gate to form a double gate structure; both ends of the double fin channel are connected to a common n+ source and n+ drain, the front gate and back gate are self-aligned, The coverage of n+ source and n+ drain is very small; there is a thick silicon dioxide insulating layer between the double-fin channel and the bulk silicon substrate, and the n+ source and n+ drain are connected to the bulk silicon substrate to form The double-fin channel is the structure of the body on the insulating layer. The invention has the functions of high-performance MOSFET logic device, flash memory and non-capacitive DRAM.

The invention discloses a low-temperature freezing device based on a magnetic field. The low-temperature freezing device comprises a low-temperature chamber and freezing equipment related to the low-temperature chamber. The low-temperature freezing device further comprises a magnetic field generation device which comprises a first magnetic field generation unit for generating a static magnetic field and a second magnetic field generation unit for generating an alternating magnetic field. The first magnetic field generation unit and the second magnetic field generation unit are correspondingly arranged, so that a preset included angle is formed by the static magnetic field and the alternating magnetic field, and the preset compound space magnetic field is generated in the low-temperature chamber. The alternating magnetic field and the static magnetic field which are staggered by the preset angle are arranged, so that the corresponding compound space magnetic field is generated in the low-temperature chamber, moisture of moisture-containing food is kept in the original distribution state in the freezing process, moisture redistribution and loss are avoided, and the freshness degree of the food before the food is frozen can be well preserved.

The invention relates to a wet food waste water removing method and device. A centrifugal filtration barrel, a drying cavity, a mincing machine and a liquid collecting cavity are sequentially arranged in the shell of the device from an inlet to an outlet; the wet food waste water removing method and device are characterized in that the centrifugal filtration barrel is arranged in the side, close to the inlet, of the shell, and the mincing machine is arranged in the side, close to the outlet, of the shell; the drying cavity is arranged between the centrifugal filtration barrel and the mincing machine, and the bottoms of the centrifugal filtration barrel and the drying cavity are connected with the liquid collecting cavity; the mincing machine is connected with the drying cavity and the liquid collecting cavity; the centrifugal filtration barrel uses centrifugal force generated by rotation of a centrifugal machine, and moisture is thrown out of the barrel through multiple filter net holes in the barrel wall; the centrifugal filtration barrel is used for removing water in wet food waste, the wet food waste is then fed into the drying cavity for secondary water removal and is finally fed into the mincing machine, food waste can be treated in time after being generated, secondary pollution caused by objective factors (such as the placement or transportation process) is avoided, and re-spreading of bacteria is avoided.

High-precision measurement device and test method for the interface pressure distribution of a silo test model, including a silo container, a stress measurement device for the bottom / side wall pressure distribution of a particle column in the silo container, and a feeding funnel; the silo container is made of A hollow columnar structure made of transparent material, the stress measurement device includes a strip-shaped flexible stress measurement film symmetrically laid on the inner wall of the silo container, a flexible stress measurement film block pressed on the bottom of the silo container, and connected to the silo container through a data cable. A computer connecting the strip flexible stress measuring film and the flexible stress measuring film block. In the present invention, the entire cross-section including the outer wall of the silo container is placed on the flexible stress measurement film block, so that the pressure distribution result of the full-section high density can be obtained, and the pressure distribution transmitted by the cylinder wall and the particle column in the cylinder can be compared and analyzed respectively. The variation law of pressure eliminates the redistribution of the internal force of the particle system caused by the deformation of the traditional pressure test box, and improves the accuracy of the silo pressure test.

The invention provides a fin type channel dual-grid multifunctional field effect transistor and preparing method in metallic oxide semi-conductor field effect transistor technique field of the grand scale integration. The flied effect transistor is based on SOI underlay, the cross section of channel is rectangular fin along the vertical direction of the channel and forms the fin channel; a side of the channel is the grid oxide and the front grip, the other side is the tunnel oxide layer as the silicon nitride trap layer, the barrier oxide layer and the back grip of the charge storage layer and forms dual-grid structure; two edges of the fin channel are connected with the common n+ source and n+ leakage, the front grid aligns the back grid, the n+ source and the n+ leakage are covered less; the device achieves the channel section, the source section and the leakage section on the insulating layer based on SOI underlay. The invention is provided with high-effective MOSFET logical device function, the function of high-speed storage and the function of no condenser type DRAM.

The present invention provides a three-way motion decoupling periodic structure used in a shaking table model box. The periodic structure is formed by stacking n periodic structural units sequentially. The coupling layer, the second confinement layer, and the elastic layer are stacked in sequence, and n≥2 is a positive integer, and the cross-sectional shapes of the first confinement layer, the elastic layer, the second confinement layer, and the plane decoupling layer are the same, The periodic structure is used to realize the decoupling of the three-way motion under the working condition of the earthquake; the present invention also provides a three-way motion decoupling model box for the shaking table test, which is composed of the periodic structure, the bottom plate of the model box, and the limit protection door type. The model box is light in weight and high in strength, and is suitable for supergravity and normal gravity shaking table tests, and multiple measures are taken to ensure the synchronization of the movement of the model box and the test soil, and the movement of the model box and the test soil in X, Y The movements in the three directions of , and Z do not interfere with each other, the model box does not generate additional force on the test soil, and the boundary effect is avoided as much as possible. It can well realize the decoupling of the three-way movement and restore the characteristics of the prototype site.

The invention provides a three-dimensional double fin type channel dual-grid multifunctional field effect transistor and preparing method. The flied effect transistor is based on double SOI underlay,the cross sections of up and down two-layer silicon film channel are provided with two same rectangular fins separately, the upper double fin type channel aligns the lower double fin type channel andthe width is the same; the outboard of every double fin type channel is the grid oxygen and the common front grid, the inboard is the tunnel oxide layer, the silicon nitride trap layer, the barrier oxide layer and the common back grip and the inboard forms the dual-grip structure; two edges of the upper double fin type channel are connected with the upper, common n+ source and n+ leakage, two edges of the lower double fin type channel are connected with the lower, common p+ source and p+ leakage; the self- aligning front grip and back grip cover less with the up and down two-layer source and leakage; the upper n+ source and the lower p+ source are connected with the different electrodes, the upper n+ leakage and the lower p+ leakage are connected with the same electrode. The invention is provided with high-effective nMOSFET, pMOSFET and CMOS logical device function.