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36results about How to "Inhibit redistribution" patented technology
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Fin channel dual-bar multi-function field effect transistor and its making method
ActiveCN101079450AGood retention propertiesInhibit redistributionSemiconductor/solid-state device manufacturingSemiconductor devicesUnderlayMOSFET
The invention provides a fin type channel dual-grid multifunctional field effect transistor and preparing method in metallic oxide semi-conductor field effect transistor technique field of the grand scale integration. The flied effect transistor is based on SOI underlay, the cross section of channel is rectangular fin along the vertical direction of the channel and forms the fin channel; a side of the channel is the grid oxide and the front grip, the other side is the tunnel oxide layer as the silicon nitride trap layer, the barrier oxide layer and the back grip of the charge storage layer and forms dual-grid structure; two edges of the fin channel are connected with the common n+ source and n+ leakage, the front grid aligns the back grid, the n+ source and the n+ leakage are covered less; the device achieves the channel section, the source section and the leakage section on the insulating layer based on SOI underlay. The invention is provided with high-effective MOSFET logical device function, the function of high-speed storage and the function of no condenser type DRAM.
Owner:PEKING UNIV +1
Heat exchanger
ActiveCN104949394AInhibit redistributionImprove heat transfer effectEvaporators/condensersPlate heat exchangerEngineering
The invention discloses a heat exchanger. The heat exchanger comprises a first collecting pipe, a second collecting pipe, a plurality of flat pipes arranged between the first collecting pipe and the second collecting pipe in parallel, and fins arranged in gaps between each two adjacent flat pipes, each flat pipe comprises two bending sections enabling a channel in the flat pipe to divert, the bending sections are a first bending section and a second bending section, the flat pipe also comprises a first linear section, a second linear section, and a third linear section, two sides of the first linear section and the third linear section are provided with the fins, and two sides of the second linear section are provided with the fins. According to the heat exchanger, the folding flat pipe is employed, the re-distribution of refrigerants is avoided, the fins are only arranged at the outsides of the linear sections of the flat pipes in which the refrigerants flow from bottom to top, the heat exchange performance is good, and the wind resistance is small.
Owner:HANGZHOU SANHUA RES INST CO LTD
Implementation method of multi-defective one-dimensional photonic crystal all-optical switch with stable and controllable output state
InactiveCN101598883ASmall nonlinear coefficient requirementsEnhance nonlinear effectsNon-linear opticsRefractive indexEngineering
The invention relates to an implementation method of a multi-defective one-dimensional photonic crystal all-optical switch with stable and controllable output state; the invention designs a one-dimensional photonic crystal cascade structure, a nonlinear material having higher nonlinear coefficient is added into a linear dielectric layer arrayed periodically, optical switch effect is realized by a broadband detect mode and a narrowband defect mode caused by introducing a multi-defect structure, and the stable control of pump light on the refractive index of a nonlinear medium is realized and the problem that the output state is difficult to be steadily controlled existing in the all-optical switch design is solved simultaneously, thus obtaining the all-optical switch realizing stable performance and quick response time, and providing the method for realizing the all-optical switch for fields such as future all-optical communication networks, optical computers and the like.
Owner:BEIJING UNIV OF POSTS & TELECOMM
Aluminum-gallium-nitride compound/gallium nitride high-electron mobility transistor
ActiveCN105789296AControllable growth processImprove consistencyTransistorSemiconductor/solid-state device manufacturingOhmic contactGallium nitride
The invention discloses a nitride high-mobility transistor with aluminum-gallium-nitride compound insertion layers for a strain balance. The nitride high-mobility transistor comprises a substrate, a GaN buffer layer, an Al<y>Ga<1-y>N insertion layer, an Al<x>Ga<1-x>N barrier layer and a GaN cap layer, wherein the GaN buffer layer is located on the substrate; the Al<y>Ga<1-y>N insertion layer is located on the GaN buffer layer; the Al<x>Ga<1-x>N barrier layer is opposite to the GaN buffer layer and is located on the Al<y>Ga<1-y>N insertion layer; the GaN cap layer is located on the Al<x>Ga<1-x>N barrier layer; the GaN cap layer and partial thickness of the Al<x>Ga<1-x>N barrier layer are removed to form grooves; inverted L-shaped source electrode and drain electrode are provided in the grooves respectively; and a gate electrode is located between the source electrode and the drain electrode. According to the other embodiment of the invention, an Al<z>Ga<1-z>N insertion layer is also formed between the Al<x>Ga<1-x>N barrier layer and the GaN cap layer. The aluminum-gallium-nitride compound / gallium nitride high-electron mobility transistor has the advantages that the performance of the AlN insertion layer is achieved by high-Al component AlGaN insertion layers; the processing controllability is relatively high; formation of an ohmic contact is facilitated by introduced inverted L-shaped source electrode and drain electrode; and meanwhile, the overall stress of an epitaxial layer can be relatively well controlled by combining the GaN cap layer, so that the performance is optimized when the reliability of the device is ensured.
Owner:NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
Preparation method of load type nano catalyst for catalyzing Suzuki coupling reaction
InactiveCN105032408AInhibit redistributionNot easy to reuniteCarboxylic acid nitrile preparationOrganic compound preparationNano catalystHigh-voltage direct current
The invention provides a preparation method of a load type nano catalyst for catalyzing a Suzuki coupling reaction, and relates to a preparation method of a catalyst. According to the preparation method, the problem that particle redistribution and aggregation are prone to occurring on palladium nanoparticles formed in the existing chemical reagent reducing preparation process in a liquid phase system is solved. The preparation method comprises the following steps that at room temperature, activated carbon and a Na2PdC14 solution are mixed, centrifuged and dried for 12 h, and a sample is obtained; the sample is taken, evenly laid on a bearing boat and placed in a discharge tube, vacuumizing is performed, N2 plasma discharge gas is pumped in, high-voltage direct currents are applied at the two ends of an electrode, the gas in the discharge tube is broken through, glow discharge plasma is initiated, and then the load type nano catalyst is obtained. According to the preparation method, the glow discharge plasma is used for preparing the load type nano catalyst in a reduction mode, particle redistribution caused by liquid phase system reduction is avoided, and the prepared Pd nanoparticles are not prone to aggregating, small in size and homogeneours in dispersion. The method belongs to the field of catalyst preparation.
Owner:INST OF PETROCHEM HEILONGJIANG ACADEMY OF SCI
Method for preparing nano-scale catalyst through ultrasonic atomization plasma reaction
InactiveCN109590028AImprove catalytic oxidation performanceHigh selectivityCatalyst activation/preparationMetal/metal-oxides/metal-hydroxide catalystsNano catalystHigh pressure
The invention discloses a method for preparing a nano-scale catalyst through ultrasonic atomization plasma reaction. The method comprises the following steps: (1) introducing an active component intoan ultrasonic atomizer, and introducing carrier gas into the ultrasonic atomizer for bubbling to bring out atomized gas containing active component precursor, so as to form aerosol; putting a catalystcarrier into a discharging gap of a plasma reactor, uniformly mixing aerosol flowing from the ultrasonic atomizer with supplemented carrier gas, enabling the mixture to continuously flow through thedischarging gap, heating gas in the plasma reactor, starting a high-voltage discharging device, continuously keeping atomization and high-voltage discharging states to reduce metal ions in active components of the aerosol into metal monomers loaded to the catalyst carrier. Compared with traditional methods, the catalyst prepared by virtue of the method has the advantages that the catalytic activity is high, the preparation cost of the catalyst is low, the preparation process is simple, and the catalyst has an extremely high industrial application value.
Owner:ZHEJIANG GONGSHANG UNIVERSITY
Dust collecting device of communication equipment
InactiveCN107297114AGuaranteed tightnessEasy to drainCombination devicesDirt cleaningWater pipeEngineering
The invention discloses a dust collecting device of communication equipment. The dust collecting device comprises a box body, wherein the bottom of the internal wall of the box body is fixedly connected with a storage battery, an air blower which is located at the right side of the storage battery is fixedly connected with the bottom of the internal wall of the box body, the top of the air blower communicates with an air inlet pipe, the surface of the air inlet pipe is fixedly connected with a dust detector, the top of the air inlet pipe penetrates through the box body and extends to the outside of the box body, one end, far away from the air blower, of the air inlet pipe is fixedly connected with a dust suction sleeve, a filtering water tank which is located at the right side of the air blower is fixedly connected with the bottom of the internal wall of the box body, the right side of the air blower communicates with the filtering water tank through the air inlet pipe, the top of the filtering water tank communicates with a water inlet pipe, and the top of the water inlet pipe penetrates through the box body and extends to the top of the box body. According to the dust collecting device of the communication equipment, through the air blower, the dust detector and the filtering water tank which are matched with one another, the problem of the traditional dust collecting devices that the normal operation of the communication equipment is affected due to poor dust removal effect is solved.
Owner:HENAN HONGJUN COMM ENG CO LTD
Three-directional movement decoupling periodic structure for vibrating table model box
Owner:ZHEJIANG UNIV
FinFET manufacturing method
InactiveCN105225956AInhibited DiffusionImprove performanceSemiconductor/solid-state device manufacturingSemiconductor devicesIsolation layerDiffusion barrier
The invnetion provides a FinFET manufacturing method. The FinFET manufacturing method comprises: a, providing a substrate (100), and forming a fin (200) on the substrate; b, forming isolation layers (300) on the substrate on the two sides of the fin (200); c, forming punchthrough barrier layer (310) and a diffusion barrier layer (320) in the fin on two sides of the upper half parts of the isolation layers (300); and d, forming drain and source regions respectivley at two ends of the fin, forming a gate structure at the middle of the fin, and filling an interlayer medium layer (500) in the upper part of the isolation layers (300). Through the method provided by the invention, PTSL distribution is effectively optimized, and device performance is improved.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Method and device for recovering data in distributed block storage system
PendingCN111581020AFix performance issuesSpeed up recoveryTransmissionRedundant operation error correctionComputer networkEngineering
The invention relates to a method and a device for recovering data in a distributed block storage system. The distributed block storage system comprises a block storage access client, a storage service cluster and a metadata service cluster; the storage service cluster comprises a plurality of storage service nodes, and the method comprises the following steps: 1) monitoring the cluster state in real time, and executing the step 2) when monitoring that the cluster is abnormal; 2) judging whether to delay reconstruction or not, if so, delaying for a set time and then executing the step 3), andif not, directly executing the step 3); 3) establishing a to-be-recovered data object list; and 4) recovering data according to the to-be-recovered data object list, and executing the data recovery step in parallel by each storage service node. Compared with the prior art, the method has the advantages that the data recovery speed can be increased, the influence of data recovery on front-end application performance can be reduced, and the like.
Owner:SHANGHAI DRAGONNET TECH +1
High-entropy alloy component and manufacturing method thereof
InactiveCN112267056AImprove organizationSmall grain sizeAdditive manufacturing apparatusSelective laser meltingMetallurgy
The invention discloses a high-entropy alloy component and a manufacturing method thereof, and relates to the technical field of high-entropy alloys. The problem of composition segregation of the high-entropy alloys is avoided. The manufacturing method of the high-entropy alloy component comprises the steps that a substrate is provided; metal powder is laid on the substrate, wherein the metal powder comprises Al, Co, Cr, Fe and Ni with the atomic ratio being a: b: c: d: e, a is larger than 0 and smaller than or equal to 1.2, and each of b, c, d and e is equal to 1; and the metal powder is subjected to melting forming treatment through a selective laser melting process, and the high-entropy alloy component is obtained. The high-entropy alloy component and the manufacturing method thereof are used for manufacturing the high-entropy alloy component.
Owner:TSC LASER TECH DEV BEIJING CO LTD
Method for controlling twist redistribution
The invention discloses a method for controlling twist redistribution. According to the invention, a back zone force application method is adiopted to apply external force on a strip located in a drawing back zone, a force application point is located on the strip surface of the drawing back zone, component force is produced by the applied external force in a vertical direction of the strip surface of the drawing back zone, a stable frictional force zone is provided for the position of the force application point, the strip is not easy to turn over, simultaneously, compactness of the strip can be effectively improved, twist redistribution can be effectively avoided, and resultant yarn levelness is improved.
Owner:JIANGNAN UNIV
A charge pump applied to a frequency synthesizer
ActiveCN109936362AIncrease output impedanceReduce mismatchPulse automatic controlClock feedthroughCmos switch
The invention discloses a charge pump applied to a frequency synthesizer. The charge pump comprises a charge-discharge current branch and an output impedance multiplication circuit. The charging and discharging current branch is composed of a unit negative feedback loop and a current source, wherein the unit negative feedback loop is composed of a complementary CMOS switch and a rail-to-rail inputand output amplifier, and the charging and discharging current branch is used for charging and discharging an output node and eliminating a clock feed-through effect and a charge sharing effect. Theoutput impedance multiplication circuit is composed of a folding type cascode structure and is used for improving the output impedance of the charge pump. The output impedance multiplication circuit comprises a reference current source, first, second, third, fourth, fifth, seventh, eighth, tenth, eleventh and sixteenth NMOS tubes, and first, second, third, fourth, sixth, seventh, ninth, tenth andfifteenth PMOS tubes. The invention is suitable for the drain terminal switch charge pump with good matching characteristic under low voltage, improves the matching degree of charging and dischargingcurrent, improves the phase noise of the frequency synthesizer, and improves the output impedance of the charge pump.
Owner:SOUTHEAST UNIV
Double-fin type channel double-grid multifunction field effect transistor and producing method thereof
ActiveCN100527442CImprove featuresImprove reliabilitySemiconductor/solid-state device manufacturingSemiconductor devicesVery large scale integrated circuitsEngineering
The invention provides a double-fin type channel double-gate multifunctional field effect transistor and a preparation method thereof, which belong to the technical field of metal oxide semiconductor field effect transistors in VLSI. The field effect transistor is based on a bulk silicon substrate; the channel is two identical fin-shaped fins with rectangular cross-sections, forming a double-fin-shaped channel; the outer side of each fin-shaped channel is a gate oxide and a front gate, and the inner side is a Tunneling oxide layer, silicon nitride trap layer, blocking oxide layer and back gate to form a double gate structure; both ends of the double fin channel are connected to a common n+ source and n+ drain, the front gate and back gate are self-aligned, The coverage of n+ source and n+ drain is very small; there is a thick silicon dioxide insulating layer between the double-fin channel and the bulk silicon substrate, and the n+ source and n+ drain are connected to the bulk silicon substrate to form The double-fin channel is the structure of the body on the insulating layer. The invention has the functions of high-performance MOSFET logic device, flash memory and non-capacitive DRAM.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
A magnetic field-based low-temperature freezing device and food freezing method thereof
ActiveCN105486017BGuaranteed FreshnessInhibit redistributionDomestic cooling apparatusLighting and heating apparatusRefrigerationMoisture
The invention discloses a low-temperature freezing device based on a magnetic field. The low-temperature freezing device comprises a low-temperature chamber and freezing equipment related to the low-temperature chamber. The low-temperature freezing device further comprises a magnetic field generation device which comprises a first magnetic field generation unit for generating a static magnetic field and a second magnetic field generation unit for generating an alternating magnetic field. The first magnetic field generation unit and the second magnetic field generation unit are correspondingly arranged, so that a preset included angle is formed by the static magnetic field and the alternating magnetic field, and the preset compound space magnetic field is generated in the low-temperature chamber. The alternating magnetic field and the static magnetic field which are staggered by the preset angle are arranged, so that the corresponding compound space magnetic field is generated in the low-temperature chamber, moisture of moisture-containing food is kept in the original distribution state in the freezing process, moisture redistribution and loss are avoided, and the freshness degree of the food before the food is frozen can be well preserved.
Owner:盛志高
Polypeptide molecule for preventing PD-L1 from redistributing on tumor surface, and preparation and application of polypeptide molecule
InactiveCN111349145APrecise positioningIn line with the concept of "precision medicine"Peptide/protein ingredientsPeptide preparation methodsChemical compoundPeptide sequence
The invention discloses a polypeptide molecule for preventing PD-L1 from redistributing on a tumor surface, and a preparation and application of the polypeptide molecule. The polypeptide molecule comprises an aggregation unit part, an assembly unit part and a targeting unit part, wherein the three parts are sequentially connected together to form a long-straight-chain polypeptide compound, and theaggregation unit part and the targeting unit part are respectively positioned at two ends of the long-straight-chain polypeptide compound. The aggregation unit part comprises double-pyrene molecules;the assembly unit part is a polypeptide sequence with an assembly function; and the targeting unit part is a specific polypeptide sequence. The polypeptide molecules dissolves nanospheres through interaction of receptors, polypeptide nanofibers are constructed through in-situ self-assembly in tumor tissues, and long-acting blocking of an immune checkpoint is realized, so that redistribution caused by endocytosis at the immune checkpoints is avoided, and the treatment effect of lasting blocking is achieved.
Owner:BEIJING UNIV OF TECH
Wet food waste water removing method and device
The invention relates to a wet food waste water removing method and device. A centrifugal filtration barrel, a drying cavity, a mincing machine and a liquid collecting cavity are sequentially arranged in the shell of the device from an inlet to an outlet; the wet food waste water removing method and device are characterized in that the centrifugal filtration barrel is arranged in the side, close to the inlet, of the shell, and the mincing machine is arranged in the side, close to the outlet, of the shell; the drying cavity is arranged between the centrifugal filtration barrel and the mincing machine, and the bottoms of the centrifugal filtration barrel and the drying cavity are connected with the liquid collecting cavity; the mincing machine is connected with the drying cavity and the liquid collecting cavity; the centrifugal filtration barrel uses centrifugal force generated by rotation of a centrifugal machine, and moisture is thrown out of the barrel through multiple filter net holes in the barrel wall; the centrifugal filtration barrel is used for removing water in wet food waste, the wet food waste is then fed into the drying cavity for secondary water removal and is finally fed into the mincing machine, food waste can be treated in time after being generated, secondary pollution caused by objective factors (such as the placement or transportation process) is avoided, and re-spreading of bacteria is avoided.
Owner:广州忻绿溢环保科技有限责任公司
Power transmission tower reinforcing device capable of preventing bending and buckling instability
ActiveCN113833344AAvoid frictional damageIncreased bending stiffnessBuilding repairsTowersTransmission towerBuckling instability
The invention provides a power transmission tower reinforcing device capable of preventing bending and buckling instability, and belongs to the technical field of iron tower reinforcement. The power transmission tower reinforcing device comprises reinforcing channel steel, a reinforcing steel column, two pieces of reinforcing T-shaped steel and a reinforcing outer connecting plate, wherein the reinforcing outer connecting plate is fixedly connected with two free ends of the reinforcing channel steel separately; the reinforcing outer connecting plate and the reinforcing channel steel are enclosed to form a rectangular cavity for accommodating the reinforcing steel column and the two pieces of reinforcing T-shaped steel; the two pieces of reinforcing T-shaped steel and the reinforcing channel steel are enclosed to form a triangular cavity for accommodating power transmission tower angle steel; and the reinforcing steel column and the reinforcing T-shaped steel are separately positioned at the inner side and the outer side of two limbs of the power transmission tower angle steel. According to the power transmission tower reinforcing device capable of preventing bending and buckling instability provided by the invention, the two pieces of reinforcing T-shaped steel and the reinforcing outer connecting plate are arranged at the outer side of the power transmission tower angle steel, and the reinforcing steel column and the reinforcing channel steel are arranged at the inner side of the power transmission tower angle steel, so that the power transmission tower reinforcing device has a prominent bending and buckling preventing effect, has enough stability, is simple in structure, is simple and convenient to mount, and is low in cost.
Owner:HEBEI HUIZHI ELECTRIC POWER ENG DESIGN CO LTD +3
Semiconductor device and manufacturing method thereof
PendingCN110047754AImprove short channel effectImproved anti-short channel effectSemiconductor/solid-state device manufacturingSemiconductor devicesReverse short-channel effectShort-channel effect
The invention provides a semiconductor device and a manufacturing method thereof. A diffusion barrier layer is formed on the side wall of a source and drain groove, on one hand, the stress, introducedtowards a channel region, of a stress layer of epitaxial growth in the source and drain groove subsequently cannot be reduced, on the other hand, subsequently formed doped ions in the stress layer further can be avoided from being diffused into the channel region and a gate medium layer, the junction depth is avoided form being increased, and the redistribution of the doped ions is avoided, so that the short-channel effect and reverse short-channel effect are improved, and the requirement that the performance of the device is improved is met.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
Oil-resistant conductive fluororubber, and preparation method and application thereof
ActiveCN114085477AExcellent medium resistanceTo achieve the purpose of programmatic designRubber materialNitrile rubber
The invention discloses an oil-resistant conductive fluororubber, and a preparation method and application thereof. The preparation method comprises the following steps: firstly, preparing fluororubber mixed rubber and nitrile rubber mixed rubber, freezing and grinding the nitrile rubber mixed rubber into powder, sieving, mixing with carbon nanotubes to obtain mixed powder, mixing the mixed powder with the fluororubber mixed rubber, and vulcanizing the obtained rubber compound to obtain the oil-resistant conductive fluororubber which can be used as a shape memory material. The oil-resistant conductive fluororubber can perform double shape memory circulation or triple shape memory circulation along with temperature change, and meanwhile, due to the addition of the carbon nanotubes, fixation and recovery of the material in the shape memory circulation can be realized through temperature change caused by voltage. The preparation method is simple and rapid; meanwhile, the obtained fluororubber has good processability and is suitable for being used as a high-performance functional rubber material.
Owner:AEROSPACE RES INST OF MATERIAL & PROCESSING TECH
Operational amplifier
ActiveUS20120249246A1Avoid chargingInhibit redistributionGated amplifiersAmplififers with field-effect devicesCapacitanceAudio power amplifier
An operational amplifier includes an input stage, an output stage, an output enable switch, an internal capacitor, a coupling effect reduction circuit. The input stage provides an intermediate signal according to an input signal. The output stage, including an output node, provides a driving signal according to the intermediate signal. The output enable switch is turned on during an output enable period, having a start time point, to drive a load with the driving signal. The internal capacitor is coupled between the input stage and the output stage. The coupling effect reduction circuit, coupled between the internal capacitor and the output node or between the internal capacitor and the input stage, is turned off during an operational period starting from the start time point, to prevent coupling charge generated when the output enable switch is turned on from affecting operational voltage levels of the input stage.
Owner:NOVATEK MICROELECTRONICS CORP
High-precision measuring device for silo test model interface pressure distribution and test method
ActiveCN112461665AEliminates force distributionHigh precisionMaterial strength using tensile/compressive forcesApparatus for force/torque/work measurementHigh densityStructural engineering
The invention discloses a high-precision measuring device and a high-precision measuring method for silo test model interface pressure distribution. The high-precision measuring device comprises a silo container, a stress measuring device for particle column bottom / side wall pressure distribution in the silo container, and a feeding funnel; the silo container is of a hollow columnar structure madeof transparent materials, and the stress measuring device comprises strip-shaped flexible stress measuring films symmetrically laid on the inner wall of the silo container, a flexible stress measuring film block fixedly pressed at the bottom of the silo container, and a computer which is communicated with the strip-shaped flexible stress measuring film and the flexible stress measuring film blockthrough data lines. According to the invention, all cross sections including the outer wall of the silo container are arranged on the flexible stress measurement film block, so that a full-section high-density pressure distribution result can be obtained, and the change rule of pressure transmitted by the silo wall and the in-silo particle column can be compared and analyzed; the redistribution of internal force of a particle system caused by deformation of a traditional pressure test box is eliminated, and the silo pressure test accuracy is improved.
Owner:NORTH CHINA INST OF SCI & TECH
LED lamp with ventilation and heat dissipation structure
InactiveCN111853655AInhibit redistributionImprove securityLighting applicationsMechanical apparatusThermodynamicsEngineering
The invention discloses an LED lamp with a ventilation and heat dissipation structure. The LED lamp comprises a lamp box, wherein a glass lampshade is mounted at the bottom end of the lamp box; an LEDlamp is arranged on the lamp box corresponding to the glass lampshade; the LED lamp is fixedly mounted at the bottom end of a PCB; a heat dissipation box is mounted at the top part of the lamp box; the heat dissipation box and the lamp box are communicated to form a universal cavity; a heat conduction and dissipation mechanism corresponding to the LED lamp is arranged in the universal cavity; anair cooling mechanism corresponding to the heat conduction and heat dissipation mechanism is arranged on the heat dissipation box; a control box is mounted at the top part of the heat dissipation box;a control switch is arranged on the control box; and the control switch is electrically connected with the PCB. The ventilation, heat conduction and heat dissipation effects of the LED lamp are good,heat dissipation can be adjusted according to conditions, energy is saved, safety is high, and emergency situations can be dealt with.
Owner:SUZHOU XUNNENG OPTOELECTRONICS TECH CO LTD
Ice maker ice tray evaporator production technology
InactiveCN111069461AShorten the timeSave electricityEvaporators/condensersHeat exchange apparatusPhysicsEngineering
The invention relates to the technical field of ice making equipment, in particular to an ice maker ice tray evaporator production technology. The method comprises the following steps of 1, copper pipe bending, specifically, a copper pipe is bent through a bending machine according to a drawing and then finished through a punching fixture; and 2, aluminum alloy die casting mold opening, researching, developing and designing, specifically, a corresponding aluminum alloy die casting mold is manufactured, clamping buckles used for controlling the hollow copper pipe to move up and down and move left and right when aluminum alloy die casting is conducted are designed in a front mold body of the mold, and then the copper pipe is directly fixed to the aluminum alloy die casting mold for die casting production. According to the ice maker ice tray evaporator production technology, the copper pipe on the back of an ice maker evaporator is directly die-cast into an aluminum alloy through the aluminum alloy mold and then welded to an ice maker compressor, the copper pipe can achieve refrigerating and heat transferring together with the aluminum alloy absolutely, insulating paint is sprayed tothe back face of the evaporator to prevent energy of the back of the evaporator from being wasted, therefore, the time of making ice cubes by an ice maker is shortened by 30%, and electricity is saved.
Owner:惠州市艺创未来科技有限公司
Method and device for dehydrating kitchen waste wet material
InactiveCN107363077BInhibit redistributionStop pollutionSolid waste disposalCentrifugal forceMoisture
The invention relates to a wet food waste water removing method and device. A centrifugal filtration barrel, a drying cavity, a mincing machine and a liquid collecting cavity are sequentially arranged in the shell of the device from an inlet to an outlet; the wet food waste water removing method and device are characterized in that the centrifugal filtration barrel is arranged in the side, close to the inlet, of the shell, and the mincing machine is arranged in the side, close to the outlet, of the shell; the drying cavity is arranged between the centrifugal filtration barrel and the mincing machine, and the bottoms of the centrifugal filtration barrel and the drying cavity are connected with the liquid collecting cavity; the mincing machine is connected with the drying cavity and the liquid collecting cavity; the centrifugal filtration barrel uses centrifugal force generated by rotation of a centrifugal machine, and moisture is thrown out of the barrel through multiple filter net holes in the barrel wall; the centrifugal filtration barrel is used for removing water in wet food waste, the wet food waste is then fed into the drying cavity for secondary water removal and is finally fed into the mincing machine, food waste can be treated in time after being generated, secondary pollution caused by objective factors (such as the placement or transportation process) is avoided, and re-spreading of bacteria is avoided.
Owner:广州忻绿溢环保科技有限责任公司
High-precision measurement device and test method for interface pressure distribution of silo test model
ActiveCN112461665BNo deformationSimple and straightforward designMaterial strength using tensile/compressive forcesApparatus for force/torque/work measurementHigh densityEngineering
Owner:NORTH CHINA INST OF SCI & TECH
Preparation method of fin channel dual-bar multi-functional field effect transistor
ActiveCN100490182CGood retention propertiesInhibit redistributionSemiconductor/solid-state device manufacturingSemiconductor devicesMOSFETVery large scale integrated circuits
Owner:PEKING UNIV +1
A Three-way Motion Decoupled Periodic Structure for Shaker Model Box
Owner:ZHEJIANG UNIV
3D dual fin channel dual-bar multi-functional field effect transistor and its making method
InactiveCN101079434BGood retention propertiesInhibit redistributionSolid-state devicesSemiconductor/solid-state device manufacturingCMOSSoi substrate
The invention provides a three-dimensional double fin type channel dual-grid multifunctional field effect transistor and preparing method. The flied effect transistor is based on double SOI underlay,the cross sections of up and down two-layer silicon film channel are provided with two same rectangular fins separately, the upper double fin type channel aligns the lower double fin type channel andthe width is the same; the outboard of every double fin type channel is the grid oxygen and the common front grid, the inboard is the tunnel oxide layer, the silicon nitride trap layer, the barrier oxide layer and the common back grip and the inboard forms the dual-grip structure; two edges of the upper double fin type channel are connected with the upper, common n+ source and n+ leakage, two edges of the lower double fin type channel are connected with the lower, common p+ source and p+ leakage; the self- aligning front grip and back grip cover less with the up and down two-layer source and leakage; the upper n+ source and the lower p+ source are connected with the different electrodes, the upper n+ leakage and the lower p+ leakage are connected with the same electrode. The invention is provided with high-effective nMOSFET, pMOSFET and CMOS logical device function.
Owner:SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
Method for manufacturing semiconductor device
InactiveCN1126150CInhibit redistributionSimple processTransistorSemiconductor/solid-state device manufacturingImpurity diffusionCrystallographic defect
A method of producing a semiconductor device, comprising the steps of: forming an impurity diffusion layer for controlling a threshold voltage by ion implantation; and performing high-temperature rapid heat treatment for recovering crystal defects generated by the ion implantation. More specifically, the treatment conditions of the high-temperature rapid heat treatment are set in such a way that even if the interstitial atoms causing crystal defects diffuse, the impurities in the impurity diffusion layer do not diffuse. For example, high temperature rapid thermal processing is performed at a temperature in the range of about 900°C to about 1100°C.
Owner:PANASONIC CORP
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