The invention discloses a
recovery method of the epitaxial growth reaction cavity of a light-emitting
diode and an epitaxial growth method of the light-emitting
diode and belongs to the technical field of semiconductors. The
recovery method comprises the following steps that: a Ga source and NH3 are introduced into a reaction cavity, so that a first compound
coating can be formed; an Al source isintroduced into the reaction cavity, so that a second compound
coating can be formed; the introduction of the Al source into the reaction cavity is stopped,
graphene is introduced into the reaction cavity to the catalyze
doping of the Al source into the second compound
coating in the reaction cavity; the introduction of the
graphene into the reaction cavity is stopped, and a stone Mg source is introduced into the reaction cavity to form a third compound coating; the introduction of the Mg source into the reaction cavity is stopped,
graphene is introduced into the reaction cavity to catalyze the
doping of the Mg source into the third compound coating in the reaction cavity; and the introduction of the Ga source, NH3 and graphene into the reaction cavity is stopped, so that the
recovery of the reaction cavity is finished. With the
recovery method of the method adopted, an excellent environment required by the
normal growth of the reaction cavity is rapidly recovered, and finally the growth efficiency of MOCVD (
metal organic
chemical vapor deposition) and product quality are improved.