The application discloses a kind of
wide band gap
perovskite solar cell based on bottom interface modification and preparation method thereof, its device structure sequentially includes conductive substrate,
hole transport layer, interface modification layer,
perovskite functional layer,
electron transport layer and
metal electrode layer from bottom to top, wherein the interface modification layer contains trans-4-guanidyl
cyclohexane carboxylic acid (t-GCHA) and its derivative additive.The
wide band gap
perovskite solar cell containing trans-4-guanidyl
cyclohexane carboxylic acid and its derivative interface modification is obtained by spin-
coating solution containing such additive on the
hole transport layer to form interface modification layer, using the
bifunctional group characteristics of guanidyl and carboxyl in molecule, the effective
passivation to buried bottom interface defect and the optimization of
energy level arrangement are realized, the film forming quality of perovskite film is improved, so that
perovskite solar cell with excellent photoelectric performance is further prepared.The preparation process of the application is simple, low in cost, and helps the commercialization of
perovskite solar cell.