Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

35results about How to "Avoid exposure to oxidation" patented technology

Novel seedling grafting device and grafting method thereof

InactiveCN106982651AFast graftingAvoid fluid lossGraftingCuttersEngineeringKnife blades
The invention provides a novel seedling grafting device and a grafting method thereof. The novel seedling grafting device comprises a rack, a clamping mechanism and a shearing mechanism, wherein the rack comprises a clamping mechanism mounting plate, the clamping mechanism comprises a clamping jaw air cylinder, a clamp head, a guide column and a seedling combining air cylinder, the clamping jaw air cylinder is installed on the clamping mechanism mounting plate, and drives the clamp head to conduct opening motion and closing motion, the seedling combining air cylinder is installed on the clamping mechanism mounting plate, and forward pushes the clamp head and the clamping jaw air cylinder, and the shearing mechanism comprises an abutting lifting air cylinder, a shearing air cylinder, a blade and a seedling placing groove; the shearing mechanism is arranged in front of the clamping mechanism, the abutting lifting air cylinder drives the shearing mechanism to move up and down, the seedling placing groove corresponds to the opening of the clamp head, the blade is arranged beside the seedling placing groove, and the shearing air cylinder drives the blade to move toward the seedling placing groove. According to the novel seedling grafting device, through the adoption of the clamping mechanism and the shearing mechanism, grafting can be completed within a short time, and the survival rate after grafting can be drastically increased.
Owner:SUZHOU XIAOYAN AUTOMATION EQUIP

Method for smelting silicon wafer cutting waste under micro-negative pressure

The invention relates to a method for smelting silicon wafer cutting waste under micro-negative pressure, belonging to the technical field of silicon regeneration and recovery by pyrometallurgy of silicon wafer cutting waste. The invention aims to solve the problems that silicon powder is easy to oxidize in the smelting process and impurity removal efficiency is low in the smelting process due tothe existence of moisture in the pyrometallurgy silicon recovery process of silicon wafer cutting waste. According to the invention, a micro-negative pressure device is moved to a position over a smelting furnace opening, and a vacuum device of the micro-negative pressure device is started to enable silicon wafer cutting waste to undergo micro-negative pressure smelting, so oxidation loss of superfine silicon powder in the smelting process is avoided, volatile impurities in silicon are removed, and synchronous refining of silicon melt is achieved. According to the invention, a micro-negative pressure environment is created above the silicon melt, so smoke can be prevented from escaping in the silicon smelting process, and the environmental influence is reduced. The method is simple in equipment requirement, easy to operate, friendly to environment and suitable for large-scale industrial production.
Owner:KUNMING UNIV OF SCI & TECH

Preparation method for wrapping surfaces of ceramic particles with metal

The invention relates to a preparation method for wrapping the surfaces of ceramic particles with metal, and belongs to the field of metal-ceramic composite. The method comprises alkali treatment, acid treatment, wrapping treatment and mixing, wherein in the wrapping treatment, the mass ratio of ceramic powder to metal powder, NH4Cl and metal hydride is (80-95):(12-25):(8-20):(15-25); and during mixing, the mass ratio of the ceramic powder to the metal powder is (40-70):(30-60). According to the preparation method, firstly alkali washing and acid washing are carried out on the ceramic particles, that is, activation treatment is carried out, then the ceramic particles after the alkali washing and acid washing are uniformly mixed with the metal powder, NH4Cl and the metal hydride for vacuumreaction treatment, and the surfaces of the ceramic particles are wrapped with the layer of metal; and therefore, oxidation is avoided, wetting and compatibility with the metal are improved, and the coating retains the characteristics of high hardness, friction and wear resistance and chemical corrosion resistance of the ceramic. The preparation method has the advantages of simple process, low equipment requirement and convenient batch production.
Owner:山东东大新材料研究院有限公司 +1

Process and device for continuously producing bentazone intermediate o-aminobenzoic acid

The invention discloses a process and a device for continuously producing bentazone intermediate o-aminobenzoic acid isopropyl amine by taking phthalimide as a raw material. The process comprises thefollowing steps: (1) adding phthalimide solid and pure water into a reaction kettle, stirring at a low speed, adding a 32% sodium hydroxide solution, and stirring at normal temperature for 30 minutes;(2) respectively feeding the phthalimide sodium salt solution and the sodium hypochlorite solution into a micro-channel reactor according to a certain flow rate, carrying out a Huffman rearrangementreaction at a low temperature, and feeding the mixture into a temporary storage tank; (4) mixing the reaction solution in the temporary storage tank 1 with hydrochloric acid (or sulfuric acid and thelike) through a static mixer, feeding the mixture into a reaction kettle, heating the mixture to room temperature, adding an isopropylamine aqueous solution at a certain flow rate, and continuously stirring for 2-3 hours; (4) enabling the solution to pass through a plate-and-frame filter press, returning the filtrate to the first step for repeated application, and drying the filter cake to obtainisatoic anhydride with the purity of 99% or above.
Owner:QINGDAO UNIV OF SCI & TECH

Copper bar connector with strong sealing performance and convenient maintenance

The invention relates to the technical field of copper bar connection, in particular to a high-sealing-performance convenient-to-overhaul copper bar connector which comprises two copper bars, the two copper bars are jointly and movably sleeved with a connecting frame, and the two copper bars are fixedly sleeved with fixing sleeves used in cooperation with the connecting frame. The copper bar connecting device is reasonable in design and ingenious in structure, through mutual cooperation of the structures, the copper bar connecting device can adapt to connection of various copper bars of different models, operation is easy and fast, the good sealing performance is achieved, oxide can be effectively prevented from being generated at the connecting position of the copper bars, and the service life of the copper bars is prolonged. And when a connection fault occurs between the two copper bars due to high temperature, power can be cut off in time, and the corresponding prompt lamp is turned on, so that each connection part does not need to be detected, the maintenance efficiency can be effectively improved, and the device has good market competitiveness and is worthy of recommendation.
Owner:NANTONG ZHUOER ELECTROMECHANICAL CO LTD

Vertical annealing device for enameled wire

The invention relates to a vertical annealing device for an enameled wire. The vertical annealing device comprises an annealing furnace and a cooling water tank. The annealing furnace is vertically arranged. An outlet of the annealing furnace is positioned at the bottom. Cooling water is contained in the cooling water tank, the cooling water tank is arranged at the bottom of the annealing furnace, and the cooling water tank is in sealed connection with the outlet of the annealing furnace. The cooling water tank is provided with a wire outlet. A bare wire enters the annealing furnace from an inlet of the annealing furnace, then enters the cooling water tank from the outlet of the annealing furnace, and is discharged from the wire outlet of the cooling water tank. According to the vertical annealing device for the enameled wire, when the bare wire is annealed, a high-temperature conductor makes contact with water in the cooling water tank to generate steam, the steam directly enters the annealing furnace, and therefore it is guaranteed that the annealed bare wire does not make contact with external air, and the situation that the surface of the bare wire is oxidized is avoided; and a steam generating device is not needed, heating is not needed, the high temperature generated in the annealing process of the conductor is reasonably utilized, a certain amount of ionized water is injected into the outlet position, and therefore steam is generated, and oxidation is prevented.
Owner:广东松田科技股份有限公司

A method for smelting silicon wafer cutting waste under slight negative pressure

The invention relates to a method for smelting silicon wafer cutting waste under slight negative pressure, and belongs to the technical field of pyromelting silicon wafer cutting waste regeneration and recovery of silicon. The present invention aims at the problem that silicon powder is easily oxidized in the smelting process and the impurity removal efficiency is low in the smelting process due to the presence of moisture in the process of pyromelting and recycling silicon from silicon wafer cutting waste, and the micro-negative pressure device is moved directly above the melting furnace mouth, Turn on the vacuum device of the micro-negative pressure device to melt the silicon wafer cutting waste in a micro-negative pressure, so as to avoid the oxidation loss of ultra-fine silicon powder during the melting process and remove the volatile impurities in the silicon, so as to realize the simultaneous refining of the silicon melt. The invention creates a slightly negative pressure environment above the silicon melt, which can avoid the escape of smoke during the silicon smelting process and reduce environmental impact. The method of the invention has the advantages of simple equipment requirements, easy operation, environmental friendliness and suitability for large-scale industrial production.
Owner:KUNMING UNIV OF SCI & TECH

Feeding control system and control method for chinlon chip raw materials

PendingCN113816156AAvoid the situation where the feeding type does not matchAvoid cross-contamination situationsLarge containersMixer accessoriesControl systemControl engineering
The invention discloses a feeding control system and a control method for chinlon chip raw materials in the technical field of chinlon chip stock bins. The system comprises a feeding box, the feeding box is a feeding device for the chinlon chip raw materials, a bin cover for feeding is arranged at the top of the feeding box, a feeding identification code is arranged on the feeding box, a discharging port for the raw materials to enter a storage process at the bottom of the feeding box, and the bottom of the discharging port is connected with the stock bin with the fixed capacity. According to the feeding control system and the control method for the chinlon chip raw materials, manual recording is not needed, the feeding amount and material data of each time can be accurately recorded, whether chinlon slice raw materials in a raw material bag can be continuously fed into the stock bin or not can be judged, and according to the condition of the raw materials in the stock bin, a controller controls whether an automatic valve is opened or not, whether feeding can be carried out or not and whether the raw material type is matched with that in the stock bin or not can be prompted through a mobile terminal, use is very convenient and more intelligent, and the situation that the feeding type is wrong and the total feeding amount is wrong can be avoided through the system.
Owner:福建恒捷实业有限公司

A kind of bismuth telluride thermoelectric material and preparation method thereof

ActiveCN112500164BHigh speedControllable powder compositionHigh volume manufacturingBismuth telluride
The invention belongs to the technical field of thermoelectric materials, and discloses a preparation method of a bismuth telluride thermoelectric material, comprising the following steps: step 1, according to the chemical formula X of N-type bismuth telluride material w / Bi 2 Te 2.7‑ w Se 0.3 Weigh Bi, Te and Se elemental powders as raw materials, or according to the chemical formula X of P-type bismuth telluride material w / Bi 0.5‑w Sb 1.5 Te 3 Weigh Bi, Sb and Te elemental powders as raw materials, X is the doping element, w is the stoichiometric ratio of the doping element X, and the range is 0≤w≤0.1; step 2, mix the above raw materials evenly and place High-energy ball milling is carried out in the ball milling tank of the plasma generator; step 3, the powder in the tank after ball milling is transferred to a sintering mold under an inert gas for sintering, and the sintering is carried out twice, and after cooling, a bismuth telluride thermoelectric material is obtained. The invention combines plasma ball milling and discharge plasma sintering technology to prepare high-performance bismuth telluride material for the first time. The method has the advantages of fast speed, controllable powder composition, low energy consumption and is suitable for mass production.
Owner:SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS +1
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products