The invention discloses a
pressure sensor based on an
organic field effect transistor and a preparation method thereof. The
pressure sensor based on the
organic field effect transistor comprises a substrate arranged at the lowest layer, wherein a gate
electrode is arranged on the surface of the substrate, a
dielectric layer is arranged on the upper surface of the substrate and the gate
electrode,a
semiconductor layer is arranged on the upper surface of the
dielectric layer, a source
electrode and a drain electrode are arranged on the
semiconductor layer respectively, and an encapsulation layer is also arranged on the substrate and wraps the gate electrode, the
dielectric layer, the
semiconductor layer, the source electrode and the drain electrode inside, wherein the
dielectric layer is made from a mixed material of bamboo
cellulose and a biological dielectric material, content of bamboo
cellulose is 50-75%, the semiconductor layer is made from a mixed material of bamboo fibers and a soluble biological semiconductor material, and
cellulose content is 5-15%. The
pressure sensor disclosed by the invention has the advantages that the bamboo cellulose can detect pressure with high sensitivity and high response, the
dielectric layer doped with the bamboo cellulose and an
organic semiconductor layer enable device stability to be higher and the pressure sensor device to be more environment-friendly, the preparation method and technology are easy to realize, a biological material functional layer can be well compatible, and environmental
pollution in a preparation process is reduced.