44 results about "Sub micrometer" patented technology

The invention discloses a wafer back alignment method, which comprises the following steps of: converting micron-sized offset between a first alignment mark and a second alignment mark into visual scale alignment judgment by taking one of a first scale and a second scale as a main scale and the other one as a vernier scale, so that the reading precision of + / -0.1 mu m can be realized under a microscope image; compared with + / -0.5 [mu] m in the prior art, the temperature is increased by 5 times; in the chip back alignment method, an ultraviolet lithography machine (MA6 / MA8) is adopted to etch alignment marks and scales, and then an electron beam exposure machine (EBL) is adopted to etch a final optical structure, so that the optimal balance of efficiency and cost is realized while the submicron alignment precision is ensured.

The invention relates to the technical field of material detection, and particularly discloses a method for determining content distribution of impurity elements in gradient depth of a surface layer of a quartz glass product. The method comprises the following steps: (1) putting a sample into a corrosion-resistant container in a clean environment; (2) adding 5-20wt% of hydrofluoric acid solution for etching, and collecting an extraction solution; (3) evaporating a part of the extraction solution to dryness, and adding 1-3wt% of nitric acid to dissolve residues; (4) measuring the concentration of impurity elements; (5) diluting the leaching solution, and then measuring the concentration of the silicon element; (6) performing a blank experiment; (7) calculating the etching quality and depth according to a formula; and (8) calculating the content of impurity elements in combination with the etching quality. According to the method, layer-by-layer analysis of the surface layer of the quartz glass at different depths in a range from submicron to tens of microns is realized, and the enrichment layer or diffusion gradient of impurity elements can be clearly and intuitively revealed.

The present invention relates to the field of patterning substrates with periodic dot structures in the micro- or sub-micrometer range, in particular to an apparatus and a method for structuring surfaces and the interior of a transparent substrate by means of laser interference structuring. The pattern produced in this way with periodic dot structures in the micro- or sub-micrometer range is characterized by a pronounced anti-reflective property. In addition, the present invention relates to a patterned substrate with anti-reflective properties comprising a periodic dot structure.

The invention provides a method and device for constructing sub-5 nano-metal gaps in a large area, and the method comprises the steps: forming a discontinuous first metal layer through employing a patterning technology, employing a dielectric film with atomic-scale thickness precision as a gap template, and constructing a second metal layer complementary with the first metal layer through combining with an overlay, oblique cutting and selective stripping technologies, thereby achieving the large-area construction of sub-5 nano-metal gaps. And finally, a high-precision metal nano gap is released by removing the medium template, so that controllable preparation of a large-area and high-uniformity sub-5-nano metal gap structure is realized. The preparation method breaks through the limitation of the traditional preparation method on the aspects of structural design flexibility, gap width precision and large-area processing, and is particularly suitable for the graphical manufacturing of the high-precision independent metal gap unit in micro-nano electronics, micro-nano optics and quantum mechanics devices. The nano-gap structure prepared by the method has a closed or open topological configuration, the unit size can reach the submicron level, and a new technical direction is provided for large-scale application of a nano-gap device in an integrated optical system.

The present application relates to the field of data storage, in particular to a kind of dynamic interlayer crosstalk suppression multilayer optical storage data reading method and system.The present application includes the following steps: through low-coherence interferometer, the layer analysis interference signal of target data layer in multilayer optical storage medium is collected, and the spatial frequency characteristic of adjacent data layer is synchronously obtained, the spatial frequency characteristic includes power spectral density, frequency bandwidth and phase distribution parameter.The present application is first realized to the dynamic analysis of transient coherent crosstalk intensity through the frequency domain convolution quantization of coherent coupling coefficient and the generation of depth network weight.The real-time aperture control (0.45-0.85 NA continuously changes) of variable aperture diaphragm is used to match the priority of frequency band suppression, break through the band-limited constraint of traditional fixed filter;combined with multichannel interference reference light path and second-order differential compensation algorithm, the interlayer spacing error is compressed to submicron level, and the phase drift caused by medium refractive index gradient is effectively suppressed.

The present invention relates to the field of patterning substrates with periodic dot structures in the micro- and / or sub-micrometer range, in particular a patterned substrate and a method for patterning surfaces of a transparent substrate by means of laser interference patterning. The patterning produced in this way with periodic dot structures in the micro- and / or sub-micrometer range is characterized by pronounced anti-fogging properties.

This invention belongs to the field of communication automation technology and discloses a method for implementing a high-reliability HBM bonding process. The invention covers the entire HBM bonding process from wafer pretreatment and precise bonding to post-processing stress control by constructing three core modules: precise pretreatment of the bonding surface, high-precision bonding of heterogeneous wafers, and dynamic stress control after bonding. Employing core technologies such as precise detection and repair of micro-defects on the bonding surface, sub-micron-level alignment of heterogeneous wafers, and dynamic calculation and compensation of bonding interface stress, it overcomes the industry bottlenecks of traditional HBM bonding processes, including "difficulty in controlling bonding surface defects, low alignment accuracy, and easy interface stress failure." It achieves high-cleanliness pretreatment of the HBM bonding surface, sub-micron-level precise bonding of heterogeneous wafers, and dynamic adaptation and control of interface stress after bonding, significantly improving the yield, interface bonding strength, and long-term operational reliability of HBM bonding, thus meeting the advanced packaging requirements of next-generation high-bandwidth memory chips.

The application relates to the technical field of thermoelectric materials, in particular to a MnTe alloying-regulated AgSbTe2-based thermoelectric material and preparation and application thereof. Through the MnTe alloying strategy, local composition fluctuation and lattice distortion are induced in the AgSbTe2 matrix, sub-micron scale Ag2Te second phases and Mn-Te enrichment regions are formed, intrinsic Ag / Sb cation disorder is combined, a multi-scale phonon scattering network is constructed, the propagation of phonons with different frequencies is effectively inhibited, the lattice thermal conductivity is significantly reduced, meanwhile, through carrier concentration optimization and Fermi level regulation, the Seebeck coefficient is effectively improved while the reasonable electrical conductivity is maintained, the power factor of the material is obviously improved, and therefore, the thermoelectric performance of the MnTe solid solution sample is significantly improved.

The application provides an epitaxial structure and a preparation method thereof. The preparation method of the epitaxial structure comprises the following steps: providing a substrate; forming a buffer layer on one side of the substrate; and forming an epitaxial layer on the side of the buffer layer away from the substrate. In the process of preparing the buffer layer and / or the epitaxial layer, magnesium and / or antimony are doped to promote lateral growth of crystals, reduce the thickness of the buffer layer and / or the epitaxial layer, and achieve the surface roughness and crystal quality required by a device by using an epitaxial layer with a sub-micron thickness, so as to meet the requirements of a specific device structure with limited thickness of the epitaxial layer and effectively improve the preparation efficiency and reduce the production cost.

The present invention concerns the field of microreaction devices and of micro-process engineering. It particularly involves devices having micro-channels (internal chambers of micrometric to submicrometric dimensions) for conveying chemical or biochemical mixtures and / or reactions. More specifically, such devices are optimized to achieve high temperature and pressure stresses (i.e. 500° C. and 500 bar). For observation and analysis purposes, the microreaction devices have a wide range of transparency in terms of wavelengths. The subject matter of the present invention relates to a microfluid or microreactor device made of transparent sapphire, preferably in the wavelength range of 150 to 6500 nm, its manufacturing method and to its use.

The present application belongs to the technical field of diamond tools, and provides a diamond tool and a preparation method thereof.The preparation raw materials of the present application are sub-micron level, i.e., ultra-fine powder, which has good surface effect and volume effect, is more uniform in mixing, avoids component segregation, and makes the alloy performance more consistent; meanwhile, the ultra-fine powder has good wetting and bonding properties for diamond, and can improve the holding capacity of the matrix material for diamond.The rare earth oxide of the present application can improve the alloy density, refine the grain, improve the crystallinity of the alloy, and further improve the holding force of the matrix material for diamond particles, and improve the mechanical properties and sharpness of the diamond tool. The examples show that the wear ratio of the diamond tool of the present application is 80.317-88.41, the cutting efficiency is 0.62-0.66 g / s, and the bending strength is 868.76-1020.63 MPa.

The invention relates to the technical field of deformation monitoring, in particular to a deformation measurement method and device and electronic equipment, the method is executed in a plurality of measurement stages, each measurement stage comprises a plurality of sub-states, and the method is implemented through iterative monitoring of the plurality of measurement stages, the step flow of each measurement stage comprises the following steps: controlling the photoelectric shutter to be switched to a first measurement mode, and obtaining a DIC initial reference image; controlling the photoelectric shutter to be switched to a second measurement mode, executing phase shift operation in a plurality of sub-states of each measurement stage, and collecting an electronic speckle interference fringe pattern corresponding to each sub-state; controlling the photoelectric shutter to switch back to the first measurement mode in the last sub-state of the measurement stage, and collecting a DIC image corresponding to the last sub-state as an initial reference image of the next measurement node; and respectively processing the interference fringe pattern and the DIC image to obtain corresponding processing results. Therefore, wide-range submicron deformation dynamic monitoring can be realized.

This invention belongs to the field of nuclear radiation detection and nanomaterials technology, specifically relating to a submicron-resolution boron-10 isotope-enriched boron nitride neutron scintillator. Addressing the technical bottleneck of severe light scattering in existing physically hybrid scintillators, this invention innovatively employs anodized aluminum nanopore templates as a confined reaction vessel and optical waveguide structure. A precursor solution enriched with boron-10 isotopes is filled into the template pores, and a hexagonal boron nitride scintillator with a nanoarray structure and boron-10 isotope enrichment is generated through in-situ reaction at high temperature. This structure strictly confines the generation and propagation of scintillating light within independent nanopillars, fundamentally suppressing transverse light scattering by utilizing the waveguide effect of the pore walls. Thus, while ensuring the macroscopic thickness of the scintillator and high neutron absorption efficiency, it achieves micron- to submicron-level spatial resolution.

The invention discloses a microchannel plate reaming concentricity testing method and device, and relates to the technical field of microchannel plate detection. According to the main technical scheme, the method comprises the following steps: selecting a first test region in a functional region of an MCP flaring end surface subjected to reaming treatment, and obtaining a microscopic morphology image containing a preselected characteristic channel circumferential contour; turning over the sample, and acquiring a microscopic image of a second test area at a position corresponding to the non-flaring end surface; as the two surfaces are in a positive and negative correspondence relationship, after the second test area image is subjected to mirror image overturning, the second test area image and the first test area image can realize spatial accurate alignment on the same-name micropore channel; and mapping the two images to the same Cartesian coordinate system in a unified manner, comparing the center coordinate offsets of the same characteristic channel in the circumferential contours of the two images, and converting the center coordinate offsets into actual physical sizes in combination with an image scale, thereby quantitatively obtaining the chambering concentricity test result of the MCP sample. According to the method, high-precision and visual representation of the submicron concentricity deviation is realized.

Systems and methods are provided that facilitate laser-based spatially-resolved ablation and ionization of a material, with low sample volume and little or no fragmentation. Sub-nanosecond pulses are directed onto a sample with a delay of less than 1 ns. Within an initial 50 fs after the onset of sample irradiation, one of the pulses generates an initial free electron density, and after the initial 50 fs, the other pulse increases the free electron density such that ablation occurs, resulting in an ablation volume having a sub-diffraction-limited lateral area that is smaller than a diffraction-limited 1 / e2 spot size of at least one of the first laser pulse and the second laser pulse, and a depth of less than 1 micron. The pulse intensities are provided such that ablation occurs without substantial analyte fragmentation, facilitating, for example, analysis and identification via mass spectrometry.

The invention relates to the technical field of trace molecule detection, in particular to a terahertz spectrum enhancement device based on local acoustic graphene plasmons and a preparation method. Comprising a substrate, a metal reflecting layer, a dielectric layer, a metal nano slit antenna array structure layer, a nano gap layer and a graphene / boron nitride heterojunction nanobelt structure layer which are sequentially arranged from bottom to top. Under irradiation of light waves, the metal slit antenna can excite local acoustic graphene plasmons limited in a submicron wide and nanometer thick layer, the light waves are collected in an infrared and terahertz wave band range, and strong field enhancement and constraint are generated. And the number of acoustic graphene plasmon excitation modes is adjusted by adjusting the symmetry of the relative positions between the graphene and the metal slits. The invention has the advantages of broadband excitation characteristic, high sensitivity, multiple detectable molecule types, small volume and the like.

The invention discloses a high-precision displacement measurement method based on circular grating moire fringes. The limitation that the position of a circle center must be known in an existing method is broken through. The specific isotropy and aperiodicity of the moire fringes of the circular grating are fully utilized, large-range and high-precision two-dimensional displacement measurement can be reliably achieved, the measurement precision can reach the submicron level or below, the practical value of the technology in a real industrial scene is greatly improved, the circular grating is adopted, and compared with a linear grating, the measurement precision is greatly improved. Position deviations in two directions in a plane can be measured at the same time. Besides, the circular grating structure has no periodicity problem, so that distance ambiguity and narrow measurement range caused by phase periodicity of a linear grating are thoroughly avoided, a complex phase splicing or period judgment algorithm is not needed, the system design is simplified, and the effective range is expanded. According to the method, radial phase changes and high-order angular harmonics which contain rich displacement information in the moire fringes of the circular grating are fully utilized, and the measurement precision is remarkably improved.

1. The name of the design product: fluorinated ether cleaning machine. 2. The use of the design product: used for precision cleaning of sub-micron precision parts (such as optical lenses, sensors, hydraulic bearings, etc.) and recovery of oxidized ether solvents. 3. The design points of the design product: in shape. 4. The picture or photo that best shows the design points: perspective view.

The utility model relates to the technical field of micro-nano manufacturing and precision characterization, in particular to a micron-sized self-adaptive balance grinding and thinning device based on a large-size sample, which comprises a balance adjusting component, the device further comprises a locking assembly, a differential positioning assembly, a positioning assembly, a sample carrying table and a differential positioning fixing table, the balance adjusting assembly is composed of a balance outer sleeve, a slag discharging groove and an annular end face, the locking assembly is composed of a brim locking inner sleeve and a mounting hole, and the differential positioning assembly is composed of a differential positioning instrument, a micrometer rod and a micrometer head. The positioning assembly is composed of a bearing positioner upper portion and a bearing positioner lower portion. Through a five-stage control chain of gravity self-balancing, elastic clamping, non-contact deslagging, axial and radial decoupling and differential feedback, the millimeter-scale error of traditional grinding is compressed to the submicron-scale error, and meanwhile, the maximum sample of 30 mm is thinned.

Systems, methods, devices, and compositions of matter for 3D printing methods and systems that can be used for rapid nanoscale 3D printing of large and deterministic 3D structures with sub-micrometer features and porosities. The method includes storing or determining a plurality of interspersed features for a three-dimensional (3D) structure to project as a sequence of sparse images on the same plane to generate closely spaced fine features on a polymer resist; and generating, using the sequence of sparse images, a plurality of patterned light sheet on the polymer resist with a temporally-focused femtosecond pulse, the light sheet having patterns.

The present invention relates to the field of patterning substrates with a periodic dot pattern in the micrometer or sub-micrometer range, in particular to an apparatus and a method for patterning the surface and the interior of a transparent substrate by laser interference patterning. The patterned regions with a periodic dot pattern in the micrometer or sub-micrometer range produced in this way are distinguished by pronounced antireflection properties. The invention also relates to patterned substrates with antireflection properties comprising a periodic dot pattern.

The invention discloses a focused ion beam CrSb microstrip processing method for a Hall strip device, and belongs to the field of micro-nano processing and spintronics. The method comprises the following steps: processing an initial structure with the thickness of more than 500 nm by adopting relatively large beam mutual assistance, and then processing a mechanical arm pit; reverse deposition is eliminated through in-situ thinning, the scanning width is shortened, deformation is reduced, and the sample is thinned to the submicron-level thickness; u-shaped cutting is carried out at a zero inclination angle, part of original strip-shaped samples are taken as extension arms, welding sampling is carried out by a manipulator at a specific inclination angle, and the center direction of an ion lens barrel moves downwards for a distance to realize sheet pre-separation; transferring the sheet to a SiO2 insulating substrate by using a specific sample nail table; and a sheet-shaped sample with adjustable length and width and submicron thickness can be obtained by finely scanning the surface with a micro-dip angle and small beam current and modulating the size with a periodic small beam current. According to the process, the processing period is remarkably shortened, the size precision and the surface quality are improved, and the process is suitable for preparing various spinning electronic devices.

Methods and apparatus determine a location of a boundary of a given material in a sample, based on classification of reciprocal space images at respective positions. A diffraction image at a given position is classified to identify a material at that position. Imaging and classification at multiple positions can quickly and reliably find the boundary with sub-micron accuracy. Binary search provides speed-up. Classification is performed by neural network. The technique is suitable for distinguishing monocrystalline, polycrystalline, and amorphous silicon, high-Z materials (tungsten), or low-Z materials (carbon), among others. The technique integrates into automated workflows, with precise positioning of further imaging, probing, or milling operations based on the located boundary. Examples and variations are disclosed.

The application discloses a kind of multispectral detectors and preparation method thereof, belong to multispectral detector technical field.Method includes: S1, electrode and channel are prepared on substrate;S2, anti-solvent is added to one channel of single nozzle multi-channel nozzle, different perovskite solution is added to other channels;S3, the ink proportion of each channel is adjusted according to the proportion of required halogen element, and the ink of each channel flows is pre-mixed at Taylor cone and then deposited in specified channel;S4, repeat step S3 until all channels are deposited by ink, thereby obtaining multispectral detector with different spectral absorption characteristics.So, the resolution of multispectral detector obtained by the application can reach sub-micron level, and after being prepared into single crystal, it has more excellent performance, and can be accurately positioned, control spectral range, low cost, can realize miniaturization, flexibility and integration.

This invention discloses a submicron-thickness waveplate based on niobium oxychloride and its polarization modulation measurement method, belonging to the field of polarization optics. The waveplate preparation method includes: cleaning and drying a silicon wafer; mechanically peeling off a bulk NbOCl2 sample using adhesive tape to form a thin NbOCl2 sample on the blue tape; attaching PDMS to the NbOCl2 sample area on the blue tape, then peeling it off to allow the NbOCl2 sample to adhere to the PDMS; attaching the PDMS with the NbOCl2 sample to the surface of the silicon wafer and heating it; and finally removing the PDMS to obtain the NbOCl2 waveplate on the silicon wafer. The obtained waveplate is subjected to polarization response testing and control analysis using a polarization modulation device, which can systematically obtain its modulation characteristics and phase delay behavior for different incident polarization directions. This invention's preparation method is simple to operate, has high device compatibility, good optical stability and scalability, and can be widely used in multifunctional photonic devices, photoelectric detection, polarization imaging, and on-chip integrated optical paths.

1. Name of the product in this design: Microfocus X-ray source (submicron level 160kV). 2. Application of this design: It is used as a core component in testing and developing equipment for industrial non-destructive testing, integrated circuit testing, new energy, materials science, etc. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: a 3D model.

The embodiment of the invention provides a scattering measurement method of a micro-through-hole structure, and belongs to the technical field of semiconductor manufacturing. The scattering measurement method of the micro-through-hole structure comprises the steps that a broadband light source is adopted to irradiate a single micro-through-hole structure to be measured after sequentially passing through a light beam adjusting module and an objective lens, so that an illumination light spot matched with the single micro-through-hole structure to be measured is formed; collecting far-field scattered light on the reflection side scattered by the micro-through-hole structure to be measured on the rear focal plane of the objective lens to obtain an experimental optical signature of the micro-through-hole structure to be measured; adopting a finite difference time domain method to obtain a simulation optical signature of the standard micro through hole structure; and determining size parameters of the micro-through-hole structure to be measured according to the experimental optical signature and the simulated optical signature. According to the invention, fixed-point measurement can be carried out on a single or a small number of high-aspect-ratio micro-through-hole structures, the sensitivity and precision of measurement are improved, and high-precision measurement of micro-through-hole structures at micron and even submicron levels is facilitated.

The application discloses a wafer bonding strength test method, cuts a bonding wafer pair into a strip-shaped sample, adjusts a precision translation table so that a laser head is aligned with a bonding layer, scans the bonding layer of the sample by using the laser, obtains an initial crack inwards, monitors the initial crack position by using a microscope, adjusts the precision translation table according to the initial crack position, obtains a calibrated crack, sticks test pull rings on both sides of the sample after the calibration, carries out a tension test on the pull rings, obtains a load-displacement curve of the sample, calculates the bonding strength of the sample according to the load-displacement curve of the sample. The preset crack of the submicron level alignment is processed through cutting and closed-loop calibration, and then the wafer bonding strength is quantitatively tested by the DCB method, so that the problem that the bonding strength of the wafer internal position of the D2W bonding sample and the W2W bonding sample cannot be quantitatively tested is solved.

An apparatus for characterizing sub-micron regions of a sample with an atomic force microscope (AFM) includes a probe of the AFM having a tip that interacts with a sample. A light source is provided to illuminate a tip-sample region with light pulses at least two pulse repetition rates to induce corresponding sample modifications. A detector measures corresponding probe deflection due to the induced sample modifications and generates signals corresponding to the light induced probe deflection changes. The AFM includes at least one controller, the controller extracting at least two sample responses to the light pulses from the measured probe deflection. And from the at least two sample responses, the system deduces a light induced surface pulse force that is substantially independent of damping.

The invention concerns a method of planarization of an optoelectronic arrangement to achieve a homogeneously thinned layer of semiconductor material with a thickness in the sub-micrometer range between the active layer and the light emission surface. A protruding structure is thereby employed to demarcate the desired planarization depth. An optoelectronic arrangement processed using the described method is also disclosed.