75 results about "Sub micrometer" patented technology

The invention belongs to the technical field of waveguide engraving, and particularly relates to a lightweight micro-nano femtosecond waveguide engraving process, which comprises the following steps of: designing a laser scanning path according to the size and the shape of a required waveguide; adjusting parameters of a femtosecond laser, then scanning the material substrate along a laser scanning path, monitoring the position of a laser focus in real time, and adjusting laser parameters or scanning speed according to monitoring feedback; the controllable local refractive index change is generated in the material substrate by using the ultrashort pulse generated by the femtosecond laser, so that the direct waveguide structure formation without chemical etching is realized. By accurately controlling the position, the intensity and the scanning path of a laser beam, a waveguide element with high consistency and stability can be created on the submicron scale; according to the invention, while the preparation process is simplified, the precision and consistency of the waveguide structure are improved, the production cost is reduced, and the environmental pollution is reduced, so that the application requirements of high-performance photonic devices are met.

The invention relates to a method for optically characterizing dielectric particles such as virus or biological particles of submicrometre size, by e.g. holographic microscopy. In particular, the invention is directed to mixing dielectric particles with non-dielectric particles which when mixed will bind to the dielectric particle.

The invention discloses a method for measuring the total thermal resistance of a submicron multi-layer stacked material based on a heat reflection method, which comprises the following steps of: growing the multi-layer stacked material on a substrate or transferring the multi-layer stacked material to the substrate, and plating a layer of gold on the upper surface of the multi-layer stacked material as a transmission layer; then measuring the test sample by using a frequency domain heat reflection method platform, and collecting the phase difference between the probe light and the pump light under a series of frequency points within the range of 100-105Hz; then, the multi-layer stacked material is regarded as a single-layer equivalent layer described by the equivalent heat conductivity keq, the equivalent volumetric specific heat Ceq and the total thickness Ltot, initial values of keq and Ceq are given, nonlinear fitting is carried out on the measured phase difference by using a multi-layer heat conduction model, keq and Ceq are continuously changed, and after multiple iterations, a single-layer equivalent layer is obtained; and selecting keq when the mean square error between the measured value and the theoretical value of the phase difference is minimum as the final equivalent thermal conductivity, and finally using the ratio of Ltot to the equivalent thermal conductivity as the total thermal resistance of the stacked material. Only the total thickness of the stacked materials is needed in the data processing process, and the measuring method is simple and easy to use.

The invention relates to the field of data storage, in particular to a multi-layer optical storage data reading method and system for dynamic inter-layer crosstalk suppression. Comprising the following steps that chromatography interference signals of a target data layer in a multi-layer optical storage medium are collected through a low-coherence interferometer, spatial frequency characteristics of adjacent data layers are synchronously obtained, and the spatial frequency characteristics comprise power spectral density, frequency band width and phase distribution parameters. According to the invention, through frequency domain convolution quantization of coherent coupling coefficients and deep network weight generation, dynamic analysis of transient coherent crosstalk intensity is realized for the first time. The real-time aperture regulation (0.45-0.85 NA continuous change) of the variable aperture diaphragm is utilized to match the frequency band suppression priority, and the band limit constraint of a traditional fixed filter is broken through; and a multi-channel interference reference light path and a second-order differential compensation algorithm are combined, so that the interlayer spacing error is compressed to a submicron order, and the phase drift caused by the medium refractive index gradient is effectively inhibited.

The invention discloses a microscopic imaging system for measuring a second harmonic phase based on polarization interference. In order to overcome the problems of insufficient precision and limited application scene of the traditional interference type second harmonic technology, a material (such as a two-dimensional material single crystal meeting D3h symmetry) with a specific second harmonic polarization response characteristic is creatively adopted as a reference sample, and the reference sample and a sample to be tested construct a coaxial interference light path. The system changes the polarization direction of the reference second harmonic by regulating and controlling the orientation angle of the reference sample, so that a controllable polarization angle difference is formed between the reference second harmonic and a signal to be detected, and implicit phase information is converted into an imaging contrast ratio capable of being quantitatively analyzed. According to the system, in-situ dynamic measurement of the phase can be realized with submicron resolution and high imaging contrast. The method has important application value in the field of characterization of novel semiconductor photoelectric materials and quantum devices, and a standardized technical scheme is provided for defect detection, intrinsic symmetry analysis and domain structure dynamics research of crystals.

The invention discloses a wafer back alignment method, which comprises the following steps of: converting micron-sized offset between a first alignment mark and a second alignment mark into visual scale alignment judgment by taking one of a first scale and a second scale as a main scale and the other one as a vernier scale, so that the reading precision of + / -0.1 mu m can be realized under a microscope image; compared with + / -0.5 [mu] m in the prior art, the temperature is increased by 5 times; in the chip back alignment method, an ultraviolet lithography machine (MA6 / MA8) is adopted to etch alignment marks and scales, and then an electron beam exposure machine (EBL) is adopted to etch a final optical structure, so that the optimal balance of efficiency and cost is realized while the submicron alignment precision is ensured.

The invention relates to the technical field of material detection, and particularly discloses a method for determining content distribution of impurity elements in gradient depth of a surface layer of a quartz glass product. The method comprises the following steps: (1) putting a sample into a corrosion-resistant container in a clean environment; (2) adding 5-20wt% of hydrofluoric acid solution for etching, and collecting an extraction solution; (3) evaporating a part of the extraction solution to dryness, and adding 1-3wt% of nitric acid to dissolve residues; (4) measuring the concentration of impurity elements; (5) diluting the leaching solution, and then measuring the concentration of the silicon element; (6) performing a blank experiment; (7) calculating the etching quality and depth according to a formula; and (8) calculating the content of impurity elements in combination with the etching quality. According to the method, layer-by-layer analysis of the surface layer of the quartz glass at different depths in a range from submicron to tens of microns is realized, and the enrichment layer or diffusion gradient of impurity elements can be clearly and intuitively revealed.

The present invention discloses an external driving mechanism for ultra-high vacuum, comprising a vacuum chamber assembly and a driving assembly connected to the outside of the vacuum chamber assembly via a connecting assembly. The driving assembly can achieve large-stroke movement of the driven part and resetting with sub-micron precision. The output end of the driving assembly is connected to the driven part, and the driven part can extend into the vacuum chamber assembly. In the present invention, by designing the driving mechanism outside the ultra-high vacuum and using bellows connection and knife-edge sealing, not only can the contamination of the ultra-high vacuum by the driving mechanism be avoided, but also flexible driving of the driven part can be achieved. At the same time, the driving assembly is directly mounted on the vacuum chamber assembly, eliminating the error caused by the independent support of the driving part. Through the provision of the bolt adjustment assembly, the driving assembly can be used to drive the driven part to move or rotate relative to the vacuum chamber assembly, thereby adapting to the actual orientation requirements of the passive driving part.

The present invention discloses a mid-infrared gas sensor based on a tapered sub-micron grating-slot waveguide, which includes a lower cladding, a first tapered grating array and a second tapered grating array. The first tapered grating array and the second tapered grating array are arranged on the upper surface of the lower cladding. The first tapered grating array is located on the front side of the second tapered grating array. The first tapered grating array is formed by 5566 identical first core layer waveguides evenly spaced in sequence from left to right. The second tapered grating array is formed by 5566 identical second core layer waveguides evenly spaced in sequence from left to right. Both the first core layer waveguide and the second core layer waveguide are tapered waveguides, and the upper and lower sides of the first core layer waveguide and the second core layer waveguide are both isosceles trapezoids. The advantages are high sensitivity, low detection threshold and fast response time.

The invention discloses a Young modulus tester and a measuring method thereof, and the Young modulus tester comprises a supporting column, a supporting seat, a beam expanding collimating mirror, a plane mirror, a first beam splitter, a second beam splitter, a CCD, an optical lever and a stretching platform, the supporting column forms a supporting frame, and the supporting seat is fixedly mounted on the supporting column; the beam expanding collimating mirror, the plane mirror, the first beam splitter, the second beam splitter, the CCD and the optical lever are all installed on the main platform, a notch is formed in the center of the main platform, and the stretching platform is installed at the notch. According to the basic principle of measuring the Young modulus, the tiny deformation amount of the metal wire is converted into the variation of the interference fringe interval through wedge interference, the elongation amount of the metal wire is obtained in real time through a digital image processing means, and therefore the Young modulus is calculated, and the measurement precision of the elongation amount can reach the submicron level. Each link deepens the previous link, the previous link plays a supporting role in the next link, data acquisition and data processing are carried out at the same time, and the data conversion efficiency is improved.

The present invention relates to the field of patterning substrates with periodic dot structures in the micro- or sub-micrometer range, in particular to an apparatus and a method for structuring surfaces and the interior of a transparent substrate by means of laser interference structuring. The pattern produced in this way with periodic dot structures in the micro- or sub-micrometer range is characterized by a pronounced anti-reflective property. In addition, the present invention relates to a patterned substrate with anti-reflective properties comprising a periodic dot structure.

The invention provides a method and device for constructing sub-5 nano-metal gaps in a large area, and the method comprises the steps: forming a discontinuous first metal layer through employing a patterning technology, employing a dielectric film with atomic-scale thickness precision as a gap template, and constructing a second metal layer complementary with the first metal layer through combining with an overlay, oblique cutting and selective stripping technologies, thereby achieving the large-area construction of sub-5 nano-metal gaps. And finally, a high-precision metal nano gap is released by removing the medium template, so that controllable preparation of a large-area and high-uniformity sub-5-nano metal gap structure is realized. The preparation method breaks through the limitation of the traditional preparation method on the aspects of structural design flexibility, gap width precision and large-area processing, and is particularly suitable for the graphical manufacturing of the high-precision independent metal gap unit in micro-nano electronics, micro-nano optics and quantum mechanics devices. The nano-gap structure prepared by the method has a closed or open topological configuration, the unit size can reach the submicron level, and a new technical direction is provided for large-scale application of a nano-gap device in an integrated optical system.

Disclosed are various systems and methods of using interferometry to measure the tear film for disease prediction and treatment. A point-by-point scan of a corneal surface of an eye is obtained from an interferometry system, including at least an interference signal. Next, a large field-of-view of the corneal surface is obtained from an objective lens with a curved focal plane matched to a curvature of the corneal surface. Subsequently, motion correction is performed on the point-by-point scan. Then, noise is filtered from the interference signal. A tear film lipid layer signal and a precorneal tear film signal are separated from the filtered interference signal. Later, a best fit frequency for the tear film lipid layer signal and the precorneal tear film signal are determined. Then, a thickness of the tear film lipid layer and the precorneal tear film are determined based at least in part on the best fit frequency.

The present application relates to the field of data storage, in particular to a kind of dynamic interlayer crosstalk suppression multilayer optical storage data reading method and system.The present application includes the following steps: through low-coherence interferometer, the layer analysis interference signal of target data layer in multilayer optical storage medium is collected, and the spatial frequency characteristic of adjacent data layer is synchronously obtained, the spatial frequency characteristic includes power spectral density, frequency bandwidth and phase distribution parameter.The present application is first realized to the dynamic analysis of transient coherent crosstalk intensity through the frequency domain convolution quantization of coherent coupling coefficient and the generation of depth network weight.The real-time aperture control (0.45-0.85 NA continuously changes) of variable aperture diaphragm is used to match the priority of frequency band suppression, break through the band-limited constraint of traditional fixed filter;combined with multichannel interference reference light path and second-order differential compensation algorithm, the interlayer spacing error is compressed to submicron level, and the phase drift caused by medium refractive index gradient is effectively suppressed.

The present invention relates to the field of patterning substrates with periodic dot structures in the micro- and / or sub-micrometer range, in particular a patterned substrate and a method for patterning surfaces of a transparent substrate by means of laser interference patterning. The patterning produced in this way with periodic dot structures in the micro- and / or sub-micrometer range is characterized by pronounced anti-fogging properties.

Systems and methods for soliton microcomb-based precision dimensional metrology via spectrally-resolved interferometry are described. In an embodiment, the system includes a dual-pumped soliton microcomb generator comprising a pump, a microresonator, and an auxiliary pump and that generates a single-soliton microcomb, an erbium-doped fiber amplifier that amplifies a C-band section of the soliton microcomb and a non-polarizing beam splitter that divides the soliton microcomb pulses into a reference arm pulse and a measurement arm pulse for an interferometer and recombines the reference arm pulse and the measurement arm pulse into a recombined beam upon their return.

The invention relates to the technical research field of thermoelectric refrigeration device resistance detection and recording and appearance detection, in particular to a device and a method for automatically detecting and recording the resistance of a thermoelectric refrigeration device. The device comprises a computer, a displacement control system, a coordinate platform, a visual microscope and a resistance test system, the computer, the displacement control system, the visual microscope and the resistance test system are placed on the surface of the coordinate platform, and the computer is connected with the displacement control system and the resistance test system. And a displacement controller and a mechanical control part of the displacement control system, a fixed arm of the coordinate platform, a microscope fixing bracket of the visual microscope and a resistance tester of the resistance test system are respectively fixed on a platform mounting surface of the coordinate platform through bolts. According to the invention, precise positioning, resistance detection recording and appearance detection can be carried out on the thermoelectric device with a millimeter-to-submicron size, and the device has the characteristics of high precision, high automation degree, high stability, easy popularization and the like.

This invention belongs to the field of communication automation technology and discloses a method for implementing a high-reliability HBM bonding process. The invention covers the entire HBM bonding process from wafer pretreatment and precise bonding to post-processing stress control by constructing three core modules: precise pretreatment of the bonding surface, high-precision bonding of heterogeneous wafers, and dynamic stress control after bonding. Employing core technologies such as precise detection and repair of micro-defects on the bonding surface, sub-micron-level alignment of heterogeneous wafers, and dynamic calculation and compensation of bonding interface stress, it overcomes the industry bottlenecks of traditional HBM bonding processes, including "difficulty in controlling bonding surface defects, low alignment accuracy, and easy interface stress failure." It achieves high-cleanliness pretreatment of the HBM bonding surface, sub-micron-level precise bonding of heterogeneous wafers, and dynamic adaptation and control of interface stress after bonding, significantly improving the yield, interface bonding strength, and long-term operational reliability of HBM bonding, thus meeting the advanced packaging requirements of next-generation high-bandwidth memory chips.

The application relates to the technical field of thermoelectric materials, in particular to a MnTe alloying-regulated AgSbTe2-based thermoelectric material and preparation and application thereof. Through the MnTe alloying strategy, local composition fluctuation and lattice distortion are induced in the AgSbTe2 matrix, sub-micron scale Ag2Te second phases and Mn-Te enrichment regions are formed, intrinsic Ag / Sb cation disorder is combined, a multi-scale phonon scattering network is constructed, the propagation of phonons with different frequencies is effectively inhibited, the lattice thermal conductivity is significantly reduced, meanwhile, through carrier concentration optimization and Fermi level regulation, the Seebeck coefficient is effectively improved while the reasonable electrical conductivity is maintained, the power factor of the material is obviously improved, and therefore, the thermoelectric performance of the MnTe solid solution sample is significantly improved.

The application provides an epitaxial structure and a preparation method thereof. The preparation method of the epitaxial structure comprises the following steps: providing a substrate; forming a buffer layer on one side of the substrate; and forming an epitaxial layer on the side of the buffer layer away from the substrate. In the process of preparing the buffer layer and / or the epitaxial layer, magnesium and / or antimony are doped to promote lateral growth of crystals, reduce the thickness of the buffer layer and / or the epitaxial layer, and achieve the surface roughness and crystal quality required by a device by using an epitaxial layer with a sub-micron thickness, so as to meet the requirements of a specific device structure with limited thickness of the epitaxial layer and effectively improve the preparation efficiency and reduce the production cost.

The invention relates to the technical field of light emitting diodes, and provides a method for constructing a micro-coarsening structure and the structure. The method comprises the following steps: providing a to-be-treated surface layer; growing a metal layer on the surface layer to be treated; performing high-temperature annealing on the metal layer to agglomerate metal to form metal particles; and taking the metal particles as a mask, and etching the surface layer to be treated to generate a micro coarsening structure. The coarsening granularity size, depth and speed of the micro coarsening structure generated by the method are controllable, and the coarsening granularity size and depth can reach the size from dozens of # imgabs0 # to dozens of microns. Therefore, the method can be well suitable for coarsening the surface of a miniature light-emitting diode with small size and micron-level or submicron-level pixel size.

The present invention concerns the field of microreaction devices and of micro-process engineering. It particularly involves devices having micro-channels (internal chambers of micrometric to submicrometric dimensions) for conveying chemical or biochemical mixtures and / or reactions. More specifically, such devices are optimized to achieve high temperature and pressure stresses (i.e. 500° C. and 500 bar). For observation and analysis purposes, the microreaction devices have a wide range of transparency in terms of wavelengths. The subject matter of the present invention relates to a microfluid or microreactor device made of transparent sapphire, preferably in the wavelength range of 150 to 6500 nm, its manufacturing method and to its use.

The present application belongs to the technical field of diamond tools, and provides a diamond tool and a preparation method thereof.The preparation raw materials of the present application are sub-micron level, i.e., ultra-fine powder, which has good surface effect and volume effect, is more uniform in mixing, avoids component segregation, and makes the alloy performance more consistent; meanwhile, the ultra-fine powder has good wetting and bonding properties for diamond, and can improve the holding capacity of the matrix material for diamond.The rare earth oxide of the present application can improve the alloy density, refine the grain, improve the crystallinity of the alloy, and further improve the holding force of the matrix material for diamond particles, and improve the mechanical properties and sharpness of the diamond tool. The examples show that the wear ratio of the diamond tool of the present application is 80.317-88.41, the cutting efficiency is 0.62-0.66 g / s, and the bending strength is 868.76-1020.63 MPa.

The invention relates to the technical field of deformation monitoring, in particular to a deformation measurement method and device and electronic equipment, the method is executed in a plurality of measurement stages, each measurement stage comprises a plurality of sub-states, and the method is implemented through iterative monitoring of the plurality of measurement stages, the step flow of each measurement stage comprises the following steps: controlling the photoelectric shutter to be switched to a first measurement mode, and obtaining a DIC initial reference image; controlling the photoelectric shutter to be switched to a second measurement mode, executing phase shift operation in a plurality of sub-states of each measurement stage, and collecting an electronic speckle interference fringe pattern corresponding to each sub-state; controlling the photoelectric shutter to switch back to the first measurement mode in the last sub-state of the measurement stage, and collecting a DIC image corresponding to the last sub-state as an initial reference image of the next measurement node; and respectively processing the interference fringe pattern and the DIC image to obtain corresponding processing results. Therefore, wide-range submicron deformation dynamic monitoring can be realized.

This invention belongs to the field of nuclear radiation detection and nanomaterials technology, specifically relating to a submicron-resolution boron-10 isotope-enriched boron nitride neutron scintillator. Addressing the technical bottleneck of severe light scattering in existing physically hybrid scintillators, this invention innovatively employs anodized aluminum nanopore templates as a confined reaction vessel and optical waveguide structure. A precursor solution enriched with boron-10 isotopes is filled into the template pores, and a hexagonal boron nitride scintillator with a nanoarray structure and boron-10 isotope enrichment is generated through in-situ reaction at high temperature. This structure strictly confines the generation and propagation of scintillating light within independent nanopillars, fundamentally suppressing transverse light scattering by utilizing the waveguide effect of the pore walls. Thus, while ensuring the macroscopic thickness of the scintillator and high neutron absorption efficiency, it achieves micron- to submicron-level spatial resolution.

Methods and apparatus determine a location of a boundary of a given material in a sample, based on classification of reciprocal space images at respective positions. A diffraction image at a given position is classified to identify a material at that position. Imaging and classification at multiple positions can quickly and reliably find the boundary with sub-micron accuracy. Binary search provides speed-up. Classification is performed by neural network. The technique is suitable for distinguishing monocrystalline, polycrystalline, and amorphous silicon, high-Z materials (tungsten), or low-Z materials (carbon), among others. The technique integrates into automated workflows, with precise positioning of further imaging, probing, or milling operations based on the located boundary. Examples and variations are disclosed.

The invention discloses a microchannel plate reaming concentricity testing method and device, and relates to the technical field of microchannel plate detection. According to the main technical scheme, the method comprises the following steps: selecting a first test region in a functional region of an MCP flaring end surface subjected to reaming treatment, and obtaining a microscopic morphology image containing a preselected characteristic channel circumferential contour; turning over the sample, and acquiring a microscopic image of a second test area at a position corresponding to the non-flaring end surface; as the two surfaces are in a positive and negative correspondence relationship, after the second test area image is subjected to mirror image overturning, the second test area image and the first test area image can realize spatial accurate alignment on the same-name micropore channel; and mapping the two images to the same Cartesian coordinate system in a unified manner, comparing the center coordinate offsets of the same characteristic channel in the circumferential contours of the two images, and converting the center coordinate offsets into actual physical sizes in combination with an image scale, thereby quantitatively obtaining the chambering concentricity test result of the MCP sample. According to the method, high-precision and visual representation of the submicron concentricity deviation is realized.

Systems and methods are provided that facilitate laser-based spatially-resolved ablation and ionization of a material, with low sample volume and little or no fragmentation. Sub-nanosecond pulses are directed onto a sample with a delay of less than 1 ns. Within an initial 50 fs after the onset of sample irradiation, one of the pulses generates an initial free electron density, and after the initial 50 fs, the other pulse increases the free electron density such that ablation occurs, resulting in an ablation volume having a sub-diffraction-limited lateral area that is smaller than a diffraction-limited 1 / e2 spot size of at least one of the first laser pulse and the second laser pulse, and a depth of less than 1 micron. The pulse intensities are provided such that ablation occurs without substantial analyte fragmentation, facilitating, for example, analysis and identification via mass spectrometry.

The invention relates to the technical field of trace molecule detection, in particular to a terahertz spectrum enhancement device based on local acoustic graphene plasmons and a preparation method. Comprising a substrate, a metal reflecting layer, a dielectric layer, a metal nano slit antenna array structure layer, a nano gap layer and a graphene / boron nitride heterojunction nanobelt structure layer which are sequentially arranged from bottom to top. Under irradiation of light waves, the metal slit antenna can excite local acoustic graphene plasmons limited in a submicron wide and nanometer thick layer, the light waves are collected in an infrared and terahertz wave band range, and strong field enhancement and constraint are generated. And the number of acoustic graphene plasmon excitation modes is adjusted by adjusting the symmetry of the relative positions between the graphene and the metal slits. The invention has the advantages of broadband excitation characteristic, high sensitivity, multiple detectable molecule types, small volume and the like.

The present invention discloses an asymmetric wave combining and demultiplexing chip based on reverse design, which belongs to the technical field of optical elements, systems or instruments. The chip includes a first-level asymmetric wave combining and demultiplexing unit and a second-level symmetric wave combining and demultiplexing unit; the proposed asymmetric wave combining and demultiplexing chip is constructed by silicon-based photonic integration technology, and includes a substrate, a lower cladding, a core layer and an upper cladding stacked in sequence from bottom to top; the functional areas inside the first-level asymmetric wave combining and demultiplexing unit and the second-level symmetric wave combining and demultiplexing unit are designed based on a reverse design algorithm, and are composed of sub-micron or nanometer-level sub-units. The asymmetric wave combining and demultiplexing chip of the present invention can cover the entire wavelength band in the optical communication system and realize non-uniform wavelength division of energy in the entire wavelength band; the proposed asymmetric wave combining and demultiplexing chip has an ultra-compact structure, adjustable wavelength interval, non-uniform transmittance of each wavelength, small channel interval crosstalk, stable performance, simple design, and can be mass-produced based on mature semiconductor processes.