The invention belongs to the technical field of a semiconductor nanometer material and application thereof, and relates to a core-shell structure quantum dot with a transition layer, a fabrication method and application of the core-shell structure quantum dot, a photoanode, a solar photo-electro-chemical device and application of the solar photo-electro-chemical device. The structure of the core-shell structure quantum dot with the transition layer comprises a core layer, the transition layer and a shell layer, wherein the transition layer is yCdSe<x>S<1-x>, the shell layer is CdS, x is more than 0 but less than 1, and y is more than 1. By changing the material structure of the quantum dot and adjusting the energy band structure of the quantum dot, the response of the quantum dot on sunlight is promoted, moreover, the separation of electron hole pairs is facilitated, and the photoelectronic generation efficiency is improved.