44results about How to "Suitable for actual production applications" patented technology

The invention relates to a pipe bending method, in particular to a bending method of pipes with a flexible chained-ball mandrel and solves the problem that high bending degree in the existing process of bending pipes having a mandrel causes mutual interference. The method includes: 1, threading a plurality of balls with a rope having a restraint ring at one end; 2, inserting a combined flexible chained-ball mandrel into a pipe to be bent; 3, placing a first rubber plug into one end of the pipe to be bent, fastening the first rubber plug through a first fastener, placing a second rubber plug into the other end of the pipe to be bent, and fastening the second rubber plug through a second fastener; 4, placing the pipe to be bent, onto a female die, and driving a male die to move down by a press until the pipe to be bent is bent; 5, after bending, loosening the first fastener, the second fastener, the first rubber plug and the second rubber plug to obtain a bent pipe. The bending method of pipes with one flexible chained-ball mandrel is applicable to pipe bending.

The invention belongs to the technical field of material preparation and metal ion detection, and relates to rhodamine B-based water-soluble polymer colorimetric probes directly used for detecting Cu<2+> in a water medium as well as a piece of Cu<2+> detecting test paper based on the water-soluble polymer probes. The rhodamine B-based water-soluble polymer is formed by virtue of reaction of a rhodamine B derivative and carboxyl-terminated methoxy polyethylene glycol, has good water solubility, can selectively detect Cu<2+> in the pure water medium, and can reach visual colorimetric detection effects by virtue of color change of detected liquor from colorless to colored.

The invention provides a method for regulating and controlling the creep anisotropy of cold-rolled pre-deformed alloys. The method adopts non-equal cross-rolling to carry out two cold-rolls on the aluminum alloy plate, and through the The creep anisotropy is controlled by the ratio of deformation amount, which specifically includes: solid solution of the aluminum alloy sheet; water quenching of the aluminum alloy sheet after solid solution; two cold rolling of the water quenched aluminum alloy sheet, and then Perform creep age forming. The present invention adopts the method of non-equal cross rolling and can greatly reduce the creep aging anisotropy of the aluminum alloy material under the premise of maintaining a relatively high creep aging deformation efficiency of the aluminum alloy material. The operation method is simple and suitable for actual production applications. High-efficiency and high-precision forming and manufacturing of aluminum alloy components can be realized.

The invention relates to the technical field of tobaccos, and discloses a measurement method for the content of moisture in a tobacco and a tobacco product. The measurement method comprises the following steps: performing programmed temperature rising by placing a tobacco sample in a thermogravimetric analyzer, recording a thermogravimetric curve when the measured tobacco sample loses the moisture in the scientifically designed heating process, and calculating the content of the moisture of the tobacco product according to weight loss, wherein the programmed temperature rising is carried out from room temperature to 110 DEG C at the speed of 50 DEG C / min, the constant temperature is kept for 8 minutes, the operating time lasts about 9.8 minutes, and moisture content results of the tobacco and the tobacco product can be acquired accurately. The moisture content detected by adopting the method disclosed by the invention is basically consistent with a result obtained by adopting a drying oven method stipulated by the conventional detection standard in the field. Compared with the drying oven method, for the measurement method disclosed by the invention, the sample amount of the method disclosed by the invention is small, the time consumption is low, and any pre-treatment is not required to be performed on the sample. The measurement method has the high repeatability and an important actual application popularization value.

The invention discloses a manufacturing method of a high-mobility electronic transistor. A protective layer is formed at the surface of a high-mobility electronic transistor structure in which a device process is completed and covers the source, drain and grid electrodes of the structure, holes are etched in the protective layer which covers the source and drain electrodes, the protective layer which covers the grid electrode and a leading-out pad thereof are all etched, and a first metal connecting line layer is deposited. Metal is deposited in the holes of the source and drain electrodes aswell as the leading-out pad of the grid electrode and serves as a connecting line, and metal is also deposited on the grid electrode and serves as a top metal layer of the grid electrode at the same time, so that the thickness of the metal of the grid electrode is increased on the premise that the total thickness is not increased, and the resistance of the grid electrode is reduced. According to the method, only change of a photomask is needed, extra processes are not needed, and the method is suitable for practical production and application of a routine production line.

The invention discloses a preparation method of monodisperse porous silicon dioxide microspheres, which comprises the following steps: hydrolyzing ethyl orthosilicate under alkaline conditions to generate nano solid silicon dioxide microspheres, and carrying out hydrothermal treatment to implement solid-to-porous transition, thereby obtaining the monodisperse porous silicon dioxide microsphere material with controllable microsphere diameter / pore size and favorable biocompatibility. The preparation method is simple, and has the advantages of mild reaction conditions and no harm to the environment. The prepared porous silicon dioxide microspheres have favorable monodispersity and biocompatibility, and can be widely used in the fields of biomedicine, catalytic carriers and the like.

The invention discloses a formaldehyde quick detection reagent, a preparation method and an application thereof. A chemical name of the formaldehyde quick detection reagent is 2-amino-3-(3-amino-1H-benzo[d]imidazole)-pyridine of which a chemical structure formula is represented as the formula I. The preparation method comprises following steps: (1) carrying out a reaction to a mixture consisting of nicotinamide and ammonium sulfamate in oil bath at 200 DEG C for 6 hours to obtain an intermediate 3; (2) performing temperature-increasing reflux to the intermediate 3 in an acid environment for 4 hours, cooling the intermediate 3 to room temperature and adjusting the pH value to 7-8 to obtain an intermediate 2; and (3) carrying out a reaction to the intermediate 2 with 1,2,4-triaminobenzene to obtain a target product. The reagent prepared according to the method hereinbefore can quite easily detect the concentration of formaldehyde. The formaldehyde quick detection reagent is simple in synthetic route, is low in cost, is convenient to use, is suitable for actual production application, is high in probe responding speed and is high in sensitivity. The reagent can achieve quick detection quantitatively and high-sensitively of the formaldehyde in environment and foods.

The invention discloses a lower alcohol detecting probe, and a preparation method and an application of the detecting probe, and belongs to the technical field of analytical chemistry detection. The lower alcohol detecting probe has a general formula in which R1 represents a hydrogen atom, R2 represents a nitrogen atom or group, and R3 represents a hydrogen atom or a methoxy group. Probe molecules of the lower alcohol detecting probe are made into a detecting plate, the detecting plate turns red or pink after being reacted with lower alcohol, and the phenomenon is obvious and can be recognized by naked eyes; the lower alcohol detecting probe is convenient for use and low in cost, can be directly used for detecting lower alcohol in a solution, can detect lower alcohol rapidly and in real time, is suitable for being used in large scale actual production, and has a good application prospect in the environmental protection field; and the lower alcohol detecting probe avoids the problem that professionals need to use professional tools and software for a long time to obtain results by means of large-scale equipment.

The invention relates to a judging method for the battery pole shoe quality, which comprises the following steps: the glossiness of a battery pole shoe to be tested is measured, whether the glossiness of the battery pole shoe to be tested is in a glossiness range is judged, the cycle performance of the battery meets the requirement, wherein, the battery is made up of battery pole shoes, and glossiness of battery pole shoe is in the glossiness range. The method can judge the battery pole shoe quality by measuring the glossiness of the battery pole shoe to be tested; the method is simple and convenient to operate, and is adapted to application in practical production; in addition, the judgment is accurate.

The invention discloses a high electron mobility field effect transistor (HEMT) epitaxial structure and a method thereof prepared by growing a p-i-n multi-quantum well heterojunction and having a high-resistance GaN-based buffer layer. Taking advantage of the large difference between the spontaneous polarization intensities of AlN and GaN, polarized doping is achieved by growing AlGaN with a graded Al composition to obtain p-type Al x Ga 1‑x N-layer and n-type Al z Ga 1‑z N layer and fixed component Al by high temperature growth y Ga 1‑y N layer, so as to obtain a p-i-n multi-quantum well heterojunction, in the p-i-n heterojunction, due to the existence of the built-in electric field, the i layer is a completely depleted region, thereby obtaining a low-carrier concentration The high-resistance GaN-based buffer layer can effectively reduce the leakage current of the buffer layer, and at the same time improve the crystal quality of the epitaxial material to improve the high-voltage characteristics of the device and reduce the useless power consumption of the device, which is suitable for practical production applications.