The invention discloses high-voltage resistant high-stability piezoelectric ceramic, comprising the following raw materials in parts by weight: 100 parts of lead tetroxide, 14-17 parts of barium carbonate, 3.5-6.5 parts of strontium carbonate, 28-30 parts of zirconium dioxide, 15-17 parts of titanium dioxide, 9.6 parts of niobium pentoxide, 2.8 parts of nickel protoxide, 0.05-0.07 part of cerium oxide, 0.03-0.05 part of chromium sesquioxide, 0.04-0.06 part of silicon dioxide and 0.02-0.04 part of lithium carbonate. The piezoelectric ceramic is prepared through mixing, pre-sintering, crushing, baking, pulping, cast film forming, isostatic pressing, sintering, electric shock treatment and polarization. A micro unit cell of the piezoelectric ceramic is square unit cell, the included angle between crystal axes is 90 degrees, the unit cell structure is relatively stable, and the electric domain is changed little by high voltage and high temperature shock. A device manufactured by adopting the piezoelectric ceramic is low in performance drift and low in failure rate, the stability and consistency of products are improved, and large-scale application of piezoelectric high-power products is promoted.