49results about How to "Avoid chemical corrosion" patented technology

The invention discloses a port intelligent defense barrier system and a control method thereof, and relates to the technical field of port electronic protection. The concrete base of the system is set on both sides of the port, the floating door is placed horizontally on the water surface of the port, and one end is fixedly connected to the corresponding concrete base, and the other end is movably connected to the corresponding concrete base; the top of the floating door connection unit on the water is provided with Lifting the winch, the defense net is woven by photoelectric composite cables, the top of which is connected to the floating door on the water, and the bottom is anchored on the seabed through the counterweight anchor chain, and the tension sensor is set on the counterweight anchor chain; the defense net is connected with the The lifting winch is connected; the traction system is set on the top of the concrete base, the movable end of the traction cable of the floating gate traction winch bypasses the traction pulley and connects with the movable end of the floating gate on the water, and the control cabinet is connected with the signal of the traction winch of the floating gate; the control system consists of VTS control center, It consists of a signal generator, a signal analysis and detection device, a signal processing module, a signal receiving device and an alarm system.

The invention relates to the field of electroplating, and provides zinc nickel and nickel tungsten electroplating liquid and a preparing method and an electroplating method of the electroplating liquid. Raw materials of each liter of electroplating liquid comprise 10 to 35g of nickel sulfate, 45 to 70g of sodium hydroxide, 3 to 12g of sodium tungstate, 5 to 12g of zinc powder, 0.1 to 1.5g of an addition agent A, 0.1 to 0.8g of an addition agent B, 15 to 50 g of a complexing agent and the balance deionized water. The electroplating method comprises the steps that a pure iron plate serves as ananode, a part to be electroplated serves as a cathode, the anode and the cathode are inserted in the zinc nickel and nickel tungsten electroplating liquid, under the first current density, electroplating is carried out, then, the first current density is converted into second current density with the current density higher than the first current density, electroplating is carried out, and a zinc nickel and nickel tungsten dual-layer plating can be obtained. The dual-layer plating can be obtained at one time, and the dual-layer plating can be used for preventing chemical corrosion, electrochemical corrosion and physical wear at the same time.

The invention discloses a damp-proof corrosion-resistant inflaming-retarding electric power communication cable which comprises a conductor and an insulating layer. A plurality of cable cores are arranged in the conductor which is arranged in a PVC plastic connecting rod, and a gap between the PVC plastic connecting rod and the conductor is filled with a waterproof filling layer; aluminum alloy hoses are arranged at the center of the PVC plastic connecting rod, and the insulating layer wraps the PVC plastic connecting rod in an extruding mode; a gap between the insulating layer and the PVC plastic connecting rod is filled with fillings; a shielding layer tightly wraps the insulating layer in an extruding mode; a reinforcement layer, a stainless steel armor layer and an aluminum-polythene adhesive protection layer sequentially tightly wrap the shielding layer in an extruding mode from inside to outside; an aluminum alloy interlocked armor barrier layer wraps the aluminum-polythene adhesive protection layer in an extruding mode; a plurality of current guide cores are evenly arranged in the aluminum alloy interlocked armor barrier layer; an inner sheath and an outer sheath are sequentially arranged outside the aluminum alloy interlocked armor barrier layer. The damp-proof corrosion-resistant inflaming-retarding electric power communication cable has the advantages of being good in damp-proof effect, good in corrosion resistance, long in service life, and the like.

The invention provides a production method of an InP-based heterojunction bipolar transistor. The method comprises the steps of: carrying out photoetching on an emitter epitaxial layer on the surface of the InP-based heterojunction bipolar transistor by using a deep ultraviolet light source so as to form an emitter electrode; corroding the emitter epitaxial layer with the emitter electrode, and exposing a base epitaxial layer of the InP-based heterojunction bipolar transistor; carrying out photoetching on the exposed base epitaxial layer by using the deep ultraviolet light source so as to form a base electrode; corroding the base epitaxial layer with the base electrode, and exposing a collector epitaxial layer of the InP-based heterojunction bipolar transistor; and carrying out photoetching on the exposed collector epitaxial layer by using the deep ultraviolet light source so as to form a collector electrode. According to the production method provided by the invention, PMMA (polymethyl methacrylate) photoresist is used for being matched with deep ultraviolet light to carry out photoetching, and use of an alkaline reagent is avoided, so that chemical corrosion of an alkali substance to GaAsSb is effectively avoided, electric properties of a conducting channel and two-dimensional electron gas are ensured to the greatest extent, and device performance of the InP-based GaAsSb HBT (Heterojunction Bipolar Transistor) is promoted.

The invention discloses a cadmium telluride solar battery provided with a tellurium-molybdenum multilayer composite thin film and belongs to the field of new energy materials and devices. According to the solar battery, the tellurium-molybdenum multilayer composite thin film is adopted as a copper-free transition layer of the cadmium telluride solar battery. On one hand, due to the fact that the transition layer has the precipitated phase of tellurium, there is no need to obtain a tellurium-enriched layer through a wet process after cadmium telluride is annealed; even if a dry process is adopted, independent deposition of a tellurium layer is not needed. On the other hand, the transition layer has the principal phase of molybdenum telluride and serves as a p-type semiconductor, and the discontinuity between the transition layer and a cadmium telluride valence band is little, so the transition layer can play a good transition role, and ohmic contact between the cadmium telluride and a metal electrode is achieved. By the adoption of the structure, the solar battery avoids chemical corrosion and achieves low-resistance contact, the performance of the solar battery can be effectively improved, and the long-term stability of a device is improved.

The invention discloses a method for preparing a composite magnet from a surface tinned magnetic powder through hot embossing. The method includes the steps of covering the magnetic powder unoiled and activated previously with a low-melting-point metal tin coating by an electroplating technique or chemical plating technique method in a plating tank in which an alkaline plating solution containing tin ions is held, and then obtaining the magnetic powder covered with the tin coating through separating, washing and purifying, and preparing the tinned magnetic power into the composite magnet by the way of hot embossing. Due to the adoption of the method, the problems of easy aging, easy shrinking, easy water absorption and poor organic solvent resisting capability of the composite magnetic with a thermosetting resin as an adhesive are effectively improved; the tin coating is enabled to cover the particles of the magnetic powder in advance; the distribution uniformity of the magnetic powder and the metal tin is effectively promoted; when the composite magnet is prepared, the proportion of the adhesive in the magnetic is effectively reduced while the same mechanical strength in the prior art is achieved; and therefore, the magnetic performance of the composite magnet is improved.