The invention discloses a method for manufacturing a 50A high-current 
fast recovery diode. The method for manufacturing the 50A high-current 
fast recovery diode comprises the steps that an N type 
semiconductor silicon material is provided to serve as a 
semiconductor substrate; the N type 
semiconductor substrate is doped with N+ type impurities; the N+ type 
impurity layer on one side of the semiconductor substrate is removed; an exposed N-type semiconductor material is doped with dual P+ type impurities; heavy 
metal platinum doping is conducted according to the high-temperature 
diffusion method; primary 
mask photoetching is conducted; glass 
powder is arranged in a 
passivation groove through knife 
coating, high-temperature sinter molding is conducted, and then PN junction glass 
passivation is completed; multiple metallization 
layers are manufactured on the two sides of a 
silicon wafer according to the vacuum 
sputtering method; secondary 
mask photoetching is conducted; the 
silicon wafer is divided into independent dies; a 
chip and a lead component are bonded together; the 
chip, the lead component and a 
diode holder are bonded together in a metallurgical mode through 
sintering; a diode cap and the diode holder are welded together in a sealed mode through percussion 
welding. According to the method for manufacturing the 50A high-current 
fast recovery diode, the manufacturing process based on the method is less influenced by the environment, the technology is mature, the stability and the 
repeatability are high, and the method can be widely used for volume production of high-current fast 
recovery diodes.