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Controllable extraction structure for 3T1C gas response internal characteristics

The invention discloses a 3T1C gas response internal characteristic controllable extraction structure, which belongs to the technical field of gas sensors, and specifically comprises an N-type gas sensitive field effect transistor, a P-type gas sensitive field effect transistor, an output modulation field effect transistor and a fixed capacitor, the N-type gas-sensitive field effect transistor is connected with the source electrode of the P-type gas-sensitive field effect transistor, and is connected to a signal output end through the fixed capacitor; the drain electrode of the N-type gas sensitive field effect transistor is connected with a driving voltage; the grid electrode of the output modulation field effect transistor is connected with modulation voltage, one of the source electrode and the drain electrode is connected with a signal output end, and the other one and the drain electrode of the P-type gas sensitive field effect transistor are jointly connected with a common ground end. Conversion and amplification of target gas concentration response are realized by utilizing the influence effect of target gas on channel resistance of different types of gas sensitive field-effect tubes, and ultrafast extraction and controllable modulation of gas concentration characteristics are realized by outputting a time constant of a modulation field-effect tube control differentiating circuit. The system has the advantages of easy integration, low power consumption and ultrafast response.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA