2results about How to "Wide application background" patented technology

The invention discloses a 3T1C gas response internal characteristic controllable extraction structure, which belongs to the technical field of gas sensors, and specifically comprises an N-type gas sensitive field effect transistor, a P-type gas sensitive field effect transistor, an output modulation field effect transistor and a fixed capacitor, the N-type gas-sensitive field effect transistor is connected with the source electrode of the P-type gas-sensitive field effect transistor, and is connected to a signal output end through the fixed capacitor; the drain electrode of the N-type gas sensitive field effect transistor is connected with a driving voltage; the grid electrode of the output modulation field effect transistor is connected with modulation voltage, one of the source electrode and the drain electrode is connected with a signal output end, and the other one and the drain electrode of the P-type gas sensitive field effect transistor are jointly connected with a common ground end. Conversion and amplification of target gas concentration response are realized by utilizing the influence effect of target gas on channel resistance of different types of gas sensitive field-effect tubes, and ultrafast extraction and controllable modulation of gas concentration characteristics are realized by outputting a time constant of a modulation field-effect tube control differentiating circuit. The system has the advantages of easy integration, low power consumption and ultrafast response.

The invention discloses a high-gain planar end-fire circularly polarized antenna with a mixed structure, which is loaded on a dielectric substrate with any dielectric constant and comprises a planar rectangular magnetic dipole, a pair of double-sided microstrip lines, a two-dimensional fan-shaped electric dipole and a planar spiral oscillator. The whole planar rectangular magnetic dipole is of a cuboid structure which is short-circuited in the back reflection direction and open-circuited in the other three sides, and the upper (lower) surface of the two-dimensional fan-shaped electric dipole is connected to the upper (lower) surface of the opening of the planar rectangular magnetic dipole through a microstrip line. By changing the radius and the central angle of the electric dipole, the characteristic that the half-power beam width of the azimuth plane and the pitching plane and the 3-dB axial ratio beam width are broadened at the same time can be realized; the spiral oscillator is arranged in the end-fire (+ x) direction of the two-dimensional fan-shaped electric dipole on the dielectric substrate, the resonant structure is used for driving the traveling wave structure to achieve the high-gain end-fire characteristic, and the radiation characteristic that the half-power beam width of a pitching plane (azimuth plane) and the 3-dB axial ratio beam width are equalized is achieved by changing the coupling transition structure between the spiral oscillator and the electric dipole.