The invention relates to a method for simultaneously producing electronic-grade dichIorosilane, electronic-grade trichlorosilane and electronic-grade silicon tetrachloride. The method uses crude trichlorosilane as a raw material; and the method comprises the steps of first-stage dust removal, gas phase adsorption, first-stage light-component removal, first-stage heavy-component removal, disproportionation, addition of a complexing agent, second-stage dust removal, first-stage separation, second-stage separation treatment, second-stage light-component removal treatment, second-stage heavy-component removal treatment, third-stage separation treatment, third-stage light-component removal, third-stage heavy-component removal, fourth-stage light-component removal, and fourth-stage heavy-component removal. According to the method provided by the invention, the process route is based on a current process route of preparing electronic-grade dichIorosilane, steps are changed and adjusted, so that a requirement of purity of raw material trichlorosilane is reduced, and the electronic-grade dichIorosilane, the electronic-grade trichlorosilane and the electronic-grade silicon tetrachloride canbe simultaneously obtained; and the products have a less content of impurities such as metal impurities, chlorosilane impurities and boron impurities, and stable quality, and can meet the requirementsof large-scale integrated circuits.