The invention belongs to the technical field of preparation of nitrogen-containing semiconductor graphite and particularly relates to nitrogen-containing semiconductor graphite and a preparation method thereof. The objective of the invention is to solve problems that graphite preparation modes in the prior art are complex, nitrogen-containing semiconductor graphite is not contained, conductivity of existing graphite is not limited by materials, and conductivity is poor. According to the invention, the graphite comprises the following components: 10-20 parts of nitrogen source, 40-50 parts of graphite, 2-4 parts of nickel-coated carbon fiber carbon black, 2-6 parts of metal powder, 3-6 parts of metal fiber, 3-7 parts of carbon fiber, 2-4 parts of phosphor copper powder, 5-10 parts of a thickening agent, 3-6 parts of a dispersing agent and 2-5 parts of a preservative, and a nitrogen source comprises nitrogen, silicon nitride, magnesium nitride, calcium nitride and carbon nitride. The nickel-coated carbon fiber carbon black, the metal powder, the metal fiber, the carbon fiber and the phosphor copper powder all have conductivity. The preparation method is convenient to operate, nitrogen-containing semiconductor graphite can be prepared, and the conductivity of the graphite can be improved.