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An environmentally friendly and efficient 4H-SiC polishing slurry and its preparation method
Pending
CN122080783A
Simple component design
High removal rate
Polishing compositions with abrasives
Tetramethylammonium hydroxide
Meth-
This invention discloses an
environmentally friendly
and efficient 4H-SiC
polishing
slurry
and its preparation method, belonging to the technical field of
polishing
compositions. The 4H-SiC
polishing
slurry
of this invention comprises the following components: 1.5 wt.%~6 wt.%
abrasive
, 0.2 wt.%~0.4 wt.% photocatalyst, 2 wt.%~4 wt.% H2O2, an
organic base
pH adjuster to adjust the pH value of the 4H-SiC polishing
slurry
to 8~11, and the balance being water; wherein the
organic base
pH adjuster includes at least one of
tetramethylammonium
hydroxide
,
tetraethylammonium
hydroxide
, and
choline
hydroxide
. The composition design of this invention is simple and easy to prepare. It has a high
material removal
rate for 4H-SiC, significantly reduces
surface roughness
after polishing, and is
environmentally friendly
and
pollution
-free, possessing the advantages of being
environmentally friendly
and efficient, and has broad application prospects in high-precision polishing of 4H-SiC.
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Owner:
HUBEI UNIV OF TECH
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No pollution in the process
Simple process
Suitable for large-scale production