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An environmentally friendly and efficient 4H-SiC polishing slurry and its preparation method

PendingCN122080783ASimple component designHigh removal ratePolishing compositions with abrasivesTetramethylammonium hydroxideMeth-
This invention discloses an environmentally friendly and efficient 4H-SiC polishing slurry and its preparation method, belonging to the technical field of polishing compositions. The 4H-SiC polishing slurry of this invention comprises the following components: 1.5 wt.%~6 wt.% abrasive, 0.2 wt.%~0.4 wt.% photocatalyst, 2 wt.%~4 wt.% H2O2, an organic base pH adjuster to adjust the pH value of the 4H-SiC polishing slurry to 8~11, and the balance being water; wherein the organic base pH adjuster includes at least one of tetramethylammonium hydroxide, tetraethylammonium hydroxide, and choline hydroxide. The composition design of this invention is simple and easy to prepare. It has a high material removal rate for 4H-SiC, significantly reduces surface roughness after polishing, and is environmentally friendly and pollution-free, possessing the advantages of being environmentally friendly and efficient, and has broad application prospects in high-precision polishing of 4H-SiC.
Owner:HUBEI UNIV OF TECH