43results about How to "Strong filling" patented technology

The invention relates to a sweet potato product and a preparation process, in particular to sweet potato dietary fiber and a preparation process thereof, suitable for deeply processing sweet potatoes. In the invention, residual sweet potato dregs left after traditional starch extraction of sweet potato are used as a raw material, and the process comprises the following steps of: selecting and soaking the raw material, primarily cleaning, secondarily cleaning, thirdly cleaning, crushing, elutriating fiber pulp, extruding to dewater, dewatering fiber dregs, baking the fiber dregs, swelling, crushing and sieving. The invention has simple practical production process and low cost, fully utilizes the sweet potato dregs left after starch extraction, reduces waste emission, protects the biological environment, increases the economic incomes of peasants and improves the economic benefits of production enterprises.

The invention discloses a method for casting a wear-resisting sand pump. In the wear-resisting sand pump, a pump impeller, a material inlet and a pump body are precisely cast by a vacuum lost mold; a shaft is connected with the pump impeller through an outer cone and an inner cone; and the outer cone and the inner cone are rectangular, prismatic or hexagonal and are fastened by screws. The precise casting method comprises the following process steps of: 1, partitioning a foam material to obtain main parts, and bonding by using an adhesion agent to obtain an integrated model of which the shape is consistent with the main shape of a casting; 2, coating a mica-based coating onto the outer surface of a foam model, and drying; 3, putting the dried foam model into a sand box, filling dry sand into the sand box, and performing three-dimensional oscillation compaction; 4, vacuumizing the sand box by using a vacuum system through negative pressure; 5, pouring molten metallic iron from the feeder head of the sand box to replace the position of a foam-molded model so as to obtain a corresponding main part of the sand pump; and 6, condensing. The wear-resisting sand pump has the characteristics of high casting quality, high surface precision, high rigidity, high wear-resisting property, environment friendliness and the like, and is sanitary, safe and reliable.

The invention provides a composition, preparation and an appliance of a neural unit spherical support, wherein a large number of channels are distributed in the neural unit spherical support, and is of a space structure which radiates from the center to the periphery, a center hole is communicated with all channels, the diameter of the neural unit spherical support is 500-2000 Num, the diameter of the channels in the inner portion of the neural unit spherical support is 20-100 Num, and stem cells and vascular endothelial cells are arranged in the channels. The neural unit spherical support can achieve the multiple purposes of effective filling of nerve defect areas and rapid reconfiguration of local neural network and microvessel and the like after being transplanted, thereby achieving the effect that the functions of the nerve defect areas rapidly recover.

The invention discloses a UV makeup method of large-size unit holographic figures and of an optical structure part for ultrafine processing having a deep trough structure and a device. According to the method, a unit figure mother set is pasted on a glass plane, surface tension of one face of a PET film is increased, a photosensitive negative film is pasted on the other face of the PET film, the PET film is placed on an upper surface of the unit figure mother set, one end of the PET film is pasted on the glass plane, spliced long plaids of the photosensitive negative film are pasted with a mask plate for exposure, a light transmission area on the mask plate and the long plaid on the photosensitive negative film are aligned, the PET film is turned over to expose the unit figure mother set, one or more rows of UV glue are dropped on one end of the unit figure mother set, the UV glue is distributed on a surface of the glue solution, the UV glue in the light transmission area on the mask plate is solidified, a pattern on the unit figure mother set is transferred to the PET film and is attached to a surface of the PET film to accomplish splicing of the pattern. The UV makeup method can realize makeup with high fidelity.

The invention discloses a high-molecular environment-friendly elastic sound insulation material. The material comprises the following components in parts by weight: 10-20 parts of an allyl elastomer,5-15 parts of a styrene elastomer, 40-120 parts of a filler, 1-15 parts of a plasticizer and 2-10 parts of an assistant. The high-molecular environment-friendly elastic sound insulation material has the advantages of high density, high strength, high flexibility, high sound insulation performance, high environment friendliness, excellent high and low temperature resistance and the like. The invention further discloses a preparation method of the high-molecular environment-friendly elastic sound insulation material. The method comprises the following steps: premixing the styrene elastomer and the plasticizer in a dispersion machine, adding the obtained mixture and the allyl elastomer into an internal mixer, carrying out melting and uniform mixing, adding other components, carrying out melting, conveying the plasticized materials into a single-screw extruder, and carrying out extrusion, squeezing, stretching and shaping to obtain the high-molecular environment-friendly elastic sound insulation material. The preparation method is simple to operate, low in cost and suitable for industrial promotion.

A through silicon via forming method and an alignment structure of a semiconductor device are provided. The semiconductor device comprises a semiconductor substrate and an interlayer dielectric layer disposed on the semiconductor substrate. The interlayer dielectric layer is provided with a groove. The alignment structure of the semiconductor device comprises a metal layer disposed on the inner surface of the groove, and an isolation layer disposed in the groove and on the surface of the metal layer, wherein the upper surface of the isolation layer is lower than the upper surface of the interlayer dielectric layer. As the upper surface of the isolation layer is lower than the upper surface of the interlayer dielectric layer, the alignment structure of the semiconductor device can be detected quickly and accurately.

The invention relates to a special film preservative for a cooked salted duck egg. Film preservatives with barrier performance, antibacterial properties and mechanical properties are prepared with natural degradable polyvinyl alcohol and chitosan as main base materials and stearic acid, glutaraldehyde, whey protein concentrate, nano-TiO2, nano-SiO2, Kelinggu, a solvent and other materials or processing aids as auxiliary materials; and based on the data of mechanical properties, barrier performance and antibacterial properties of films prepared from different formulas, the special film preservative for the cooked salted duck egg is obtained. The special film preservative has the following beneficial effects: the special film preservative can prevent exchange between substances in and out of the shell of the cooked salted duck egg and invasion by a variety of harmful microbes during storage of the cooked salted duck egg, exerts a certain bacteriostatic effect, reduces loss of dry matters and moisture, allows the cooked salted duck egg to maintain good storage quality and prolongs the high-quality shelf life of the cooked salted duck egg; moreover, the special film preservative replaces conventional plastic composite boiling bags in packaging, so the usage amount of plastics is lowered down, environmental pollution is reduced, production cost is decreased, and benefits are increased.

This invention discloses one process method for automatic self-calibrating silicon block layer, which comprises the following steps: firstly growing first layer of silica dioxide by use of CVD method; then using HDP method to grow second layer of silica dioxide on the first layer of silica dioxide layer. The invention can solve the stuff ability problem between calibration block layer and multiple transistor lines to overcome the whole phenomenon to lower leakage current.

The invention relates to a pipe semi-solid air pressure contact forming method, and relates to a metal pipe internal bulging process method. The invention aims to solve problems that due to the fact that the existing pipe machining method requires that yield strength and thickness of the pipe can not be too high, and thus the existing pipe machining method can not be applied to materials with poorplasticity; the existing pipe machining method is not suitable for forming parts with complex shapes, and forming equipment is large in tonnage. The method comprises the step 1 of placing the pipe ina mold cavity of a forming mold, closing the forming mold and sealing the pipe; the step 2 of heating the pipe to a semi-solid temperature and preserving heat; the step 3 of continuously feeding airinto the inner of the pipe until the outer wall of the pipe is attached to the mold cavity of the forming mold; the step 4 of stopping the heating of the pipe and discharging the air; and step 5 of opening the forming mold, taking out the formed pipe from the mold cavity, and namely the pipe semi-solid air pressure contact forming method is completed. The invention is used for the pipe semi-solidair pressure contact forming.

Provided are a through-silicon via and a forming method thereof. The forming method of the through-silicon via comprises the following steps: a semiconductor substrate is provided, wherein the semiconductor substrate has a through via, and the surface of the through via is coated with an insulating layer; and the through via is filled with silicon germanium. By making use of good filling capacity of silicon germanium and filling the through via with silicon germanium, a formed conductive column has no hole inside. Therefore, a through-silicon via formed by the method has stable performance and high reliability.

A device for repairing pavement quickly and efficiently comprises at least one repairing inclusion matched with pit groove of pavement, the repairing inclusion is filled with repairing material block,the outer surface of the repairing inclusion is wrapped with protective net, and the repairing inclusion is connected with the protective net to form an integral body. The invention provides a devicefor repairing pavement quickly and efficiently and a construction method thereof, The utility model has the advantages of simple operation, quick construction and greatly prolonging the service lifeof the pavement, and effectively solves the shortcomings of the traditional pavement repair method, such as long repairing time, complex equipment operation, large occupation area, long construction period and a large amount of manpower and material resources, so as to avoid traffic congestion caused by road closure and greatly reduce economic losses.

A method for forming a finned field effect transistor comprises the following steps of forming a cap layer on a semiconductor substrate; etching the cap layer and the semiconductor substrate until grooves are formed in the semiconductor substrate; forming fins on the semiconductor substrate and between the adjacent grooves; fully filling the grooves and covering the rest portion of the cap layer by using isolation material layers; flattening the isolation material layers until the isolation material layers are exposed out of the upper surface of the cap layer; etching the flattened isolation material layers for the first time until the upper surfaces of the rest isolation material layers are level and parallel to one another and are perpendicularly connected with a side surface of the cap layer; and etching the rest isolation material layers for the second time by using a SiConi etching method until isolation layers are formed. The fins of the finned field effect transistor formed by the method have good outlines, and the upper surfaces of the isolation layers are level and parallel to one another, so that the performance of the finned field effect transistor is improved.

The invention relates to the technical field of copper plating, and particularly discloses an acidic copper plating process suitable for carrier plate electroplating, which comprises the step of electroplating a carrier plate through an electroplating solution, and is characterized in that the electroplating solution comprises the following components: 200-250g/L of copper sulfate, 30-50g/L of electroplating-grade sulfuric acid, 40-80ppm of analytically pure hydrochloric acid, 25-40ml/L of a copper plating leveling agent, 0.5-1.3 ml/L of a copper plating brightener and 5-15ml/L of a copper plating wetting agent, the device is designed for HDI products filled with blind holes, is suitable for insoluble anodes and soluble anodes, can show excellent filling capacity in vertical continuous electroplating or a traditional portal frame type electroplating line, is stable in electroplating liquid performance, and has an excellent blind hole filling effect; the electroplated copper particles are bright, fine in crystal, good in ductility and excellent in uniformity; a direct-current electroplating method can be used for production; maintenance is easy; a Hou's cell and a CVS can be used for analysis and control.

The invention discloses raise-dust-free chalk having high filling capacity and used for a magnetic blackboard. The chalk comprises the following raw materials: gypsum, modified talc powder, white carbon black, natural beeswax, glycerin, epoxy silkworm chrysalis oleic acid butyl ester, sodium dodecyl phosphate, sodium polyacrylate and a pigment, wherein the modified talc powder is prepared with the following process: talc powder, diatomaceous earth, iron(III) chloride and ferrous sulfate are placed in water and stirred uniformly, a sodium bicarbonate solution is added dropwise, the mixture is stirred, filtered and dried, and a first pre-prepared material is obtained; cyclodextrin and trimethoxyoctylsilane are stirred uniformly, an ethanol solution is added and mixed uniformly, citric acid is added to regulate the pH value of the system, and a second pre-prepared material is obtained; the second pre-prepared material is sprayed to the first pre-prepared material, the mixture is stirred and dried, and the modified talc powder is obtained. The chalk writes smooth and clear on dry and wet blackboards and does not slip, falling dust in a writing process can be adsorbed on the surface of the magnetic blackboard, raise dust is avoided, writing is erased with no mark residue, the cost is low, and the chalk is durable.