The invention relates to a preparation method of a
red light material based on a ZnO
solid film, and relates to the technical field of micro-nano electronic luminescent device manufacturing, and the preparation method comprises the following steps: S1, substrate pretreatment; s2, constructing a vacuum environment; s3, introducing working gas; s4, thin film deposition; s5, taking out the sample; s6, primary annealing; s7, secondary annealing; and S8, obtaining a finished product. According to the preparation method of the
red light material based on the ZnO
solid film, the preparation cost is remarkably reduced, the technological process is simplified, and the problems that in the prior art, the bulk
single crystal processing cost is high, the
doping method process is complex, and large-scale production is difficult are solved. The preparation method has the advantages that the preparation method is simple, expensive
single crystal raw materials are not needed, toxic or magnetic high-cost
doping elements such as
cobalt (Co) are prevented from being introduced, the green and low-cost manufacturing process is realized, and the preparation method is simple in process flow, convenient to operate, good in
repeatability and stability and very suitable for industrial large-scale commercial production.