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This application belongs to the field of battery technology and discloses a method for etching the copper seed layer of a copper-grid heterojunction solar cell, an etching solution, and its application. The etching solution consists of dilute sulfuric acid solution, ozone, and water, with the concentration of the dilute sulfuric acid solution being 0.6%-10% and the ozone concentration being 10-30 ppm. The solar cell containing the copper seed layer or the silicon wafer of a heterojunction solar cell containing an ITO film is completely immersed in the etching solution and etched at room temperature to remove the copper seed layer from the surface of the silicon wafer. The etching solution described in this technical solution is used to remove the copper seed layer in copper-grid heterojunction solar cells. It has a simple composition, and the waste liquid after etching is a copper sulfate solution with no harmful byproducts, making it environmentally friendly. The ozone is generated on-site from air or oxygen, and the sulfuric acid concentration is extremely low, reducing the cost of chemical solutions by more than 60% and resulting in extremely low overall operating costs. This system causes very little damage to transparent conductive films such as ITO and SnO2, and the sheet resistance and film thickness change rate can be controlled within 3%, ensuring the performance of the solar cell. Compared with other oxidant etching solutions, it avoids the etching capacity decay defects caused by oxidant decomposition.