31results about How to "Reduced interfacial free energy" patented technology

The invention provides an atorvastatin calcium tablet which comprises the following components of raw materials in parts by weight: 1-20 parts of atorvastatin calcium, 10-80 parts of a filling agent,20-40 parts of a disintegrant, 5-40 parts of an adhesive, 1-15 parts of a lubricant and 1-20 parts of a calcium enhancing agent. The atorvastatin calcium tablet provided by the invention has the advantages of being high in stability, good in dissolubility, high in bioavailability, and the like, and is good in clinical application prospect.

The invention discloses a nucleating agent polypropylene high-performance compound additive which comprises the following components in percentage: 45-55% of nano nucleating agent, 5-10% of fluorine-containing polymer, 20-30% of antioxidant, 2-6% of antibacterial agent, 5-10% of dispersing agent and 3-10% of calcium stearate. The nucleating agent polypropylene high-performance compound additive has the characteristics of multiple functions, safety, environmental-friendliness and high specificity, and a plastic product with the additive has multiple excellent properties.

The invention relates to an LED (light-emitting diode) epitaxy structure. An N-type GaN layer adopts a peridoic gradient doped structure; Si doped GaN layers and undoped GaN layers are alternately arranged; electrons can be gathered in the undoped GaN layers to form high-density two-dimensional electron gas, so that the concentration and mobility of a carrier are effectively improved; a more important fact is that a multijunction capacitance structure is formed between a U-shaped superlattice layer on a multiple quantum well layer and the N-type GaN layer; the transverse expansion ability of the carrier can be effectively improved; the distribution area of current flowing into the multiple quantum well layer is enlarged; and LED driving voltage is effectively reduced. The invention further relates to a preparation method of the LED epitaxy structure. The N-type GaN layer is simple in doped structure and small in layer number; the superlattice layer adopts an undoped structure; a technology is simple; and the manufacturing cost is low.

The invention discloses a surface metallised ceramic and a manufacturing method thereof. The method comprises the following operation steps of immersing a metallised surface of the ceramic in an aluminium or aluminium alloy melt, making the metallised surface move with respect to the melt such that the aluminium or aluminium alloy melt wets the metallised surface of the ceramic, taking out the metallised surface of the ceramic from the melt and freely cooling the aluminium or aluminium alloy film attached to the surface, so as to obtain the ceramic with the surface connected with the aluminium or aluminium alloy film. Compared with prior art, the interface between the ceramic and the aluminium or the aluminium alloy film in the invention does not contain amorphous oxide. The aluminium or aluminium alloy crystal grains and the ceramic crystal grains are grown together. The internal organisations of the formed film are compact and do not contain oxide. The formed aluminium or aluminium alloy film has a thickness in a range from several microns to more than ten microns, is firm, and cannot easily fall off. The chessboard division peeling strength between the aluminium or the aluminium alloy film and the ceramic is proved, by experiments, to be greater than or equal to 4.1N / cm. The invention has wide application prospect in the surface metallising field of ceramic.