The invention provides an F-free one-dosage type low IGZO damage
metal etching solution and a preparation method thereof, and relates to the technical field of
semiconductor display panel manufacturing. The F-free one-
dosage form low IGZO damage
metal etching liquid is prepared from the following raw materials:
hydrogen peroxide, a complexing agent, 2, 4-dichlorphenoxyacetic acid,
ethylenediamine tetraacetic acid, a
corrosion inhibition compound agent and the balance of
ultrapure water, the
corrosion inhibition compound agent is obtained by mixing 2-mercapto-5-methylbenzimidazole and amino trimethylphosphonic acid according to the
mass ratio of 1: (2-3), and the ratio of the addition amount of the
ethylenediamine tetraacetic acid to the addition amount of the
corrosion inhibition compound agent is smaller than or equal to 1.2. According to the method, a complexing agent-corrosion inhibition compound synergistic
system is adopted, the damage rate of an IGZO layer is smaller than 5%, the device yield is remarkably increased, the
etching rate of Cu is 500-800 / min, the
etching rate of MoTi is 300-500 / min, and the rate matching performance is good.