This invention discloses a method for preparing ultra-clean, high-purity electronic-grade
acetone, belonging to the field of
acetone refining technology. The method includes the following steps: pre-purification, selective complexation, low-temperature
plasma oxidation, three-stage extraction-
vacuum distillation, composite adsorption-membrane
permeation coupled
dehydration, and three-stage gradient demicronization. This invention utilizes a step-by-step
impurity removal process to synergistically remove multiple impurities such as
metal ions,
moisture, aldehydes, and particulate matter. The final
acetone obtained has a purity ≥99.995 wt%,
moisture ≤5 ppm, single
metal ion content ≤5 ppb, ≥0.1 μm particle content ≤5 particles / mL,
aldehyde content ≤0.5 ppm, and
evaporation residue ≤0.5 ppm, fully complying with SEMIG4 standards. This invention features a continuous process flow, thorough
impurity removal, and controllable
energy consumption, making it suitable for applications in semiconductors, high-end
electronics, and precision analysis fields with stringent acetone purity requirements.