The invention provides a preparation method of a
gallium oxide ceramic target material, and relates to the technical field of preparation of
oxide target materials and preparation of
semiconductor target materials. The method comprises the following steps: weighing a pure-phase
gallium oxide target material by using an electronic scale, pouring
powder into an
alumina crucible, adding a proper amount of a binder, stirring, granulating, screening by using a proper screen, pouring into a mold, vibrating, and uniformly paving; and then preparing the pure
gallium oxide target material by adopting a hydraulic
machine for tabletting,
sintering and other processes. The steps of mixing,
drying and the like are added before
granulation of the doped
tin oxide target material. The target material prepared by the method is not easy to fall off
powder, damage and the like in the transfer process. The
ceramic target material sintered at 1200-1800 DEG C for 16-32 hours after low-temperature baking and degumming is smooth in surface and compact in structure, and the phenomena of damage, splashing and the like cannot occur in the use process of the subsequent
laser technology.