Disclosed are multilayered
resist structures including
bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing
layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer
resist structure exhibiting
high resolution, residue free
lithography and methods of preparing these materials. These underlayer films include the group consisting of novolac based resists whose
processing conditions are controlled, polyarylsulfones such as the BARL material, polyhydroxystyrene based derivatives, an example being a
copolymer of polyhydroxystyrene and polyhydroxystyrene reacted with anthracenemethanol that contains a cross-
linker, and acid catalyst (thermal acid generator), polyimides, polyethers in particular polyarylene ethers, polyarylenesulfides, polycarbonates such as polyarylenecarbonates, epoxies, epoxyacrylates, polyarylenes such as polyphenylenes, polyarylenevinylenes such as polyphenylenevinylenes, polyvinylcarbazole, cyclicolefins, and polyesters. Such films have index of
refraction and
extinction coefficient tunable from about 1.4 to about 2.1 and from about 0.1 to about 0.6 at UV and DUV wavelengths, in particular 365, 248, 193 and 157 nm and EUV. Moreover, underlayer films produced in the present invention do not interact with the
resist limiting interfacial mixing and
contamination of resist by an
outgassing product. The
bilayer and TSI resist structures can be used for 248, 193, 157, EUV, x-
ray, e-beam, and
ion beam technology.