The application relates to the field of advanced packaging
semiconductor driving chips, and discloses a gold
etching solution, application of the gold
etching solution and a method for
etching a
wafer electroplated gold-silver
alloy. The gold etching solution comprises a complexing agent, an
oxidizing agent, an aluminum protective agent and a
solvent; wherein the complexing agent comprises a main complexing agent and an auxiliary complexing agent; the main complexing agent is selected from
thiourea and / or a
thiourea derivative; the auxiliary complexing agent is selected from at least one of butyl
xanthate, isoamyl
xanthate,
thiuram disulfide and diethyl
phosphonate; and the weight ratio of the complexing agent: the
oxidizing agent: the aluminum protective agent: the
solvent is 1:(0.2-1.5):(0.2-1.5):(20-30). The gold etching solution has mild oxidizing property, can selectively etch a PVD gold seed layer, avoids etching the gold-silver
alloy bump itself, does not cause the gold-silver
alloy bump to appear serious deformation, avoids damage to aluminum lines in the
wafer caused by etching, and has mild etching conditions and adjustable gold
etching rate.