The invention discloses a heat sink material for semiconductors, which comprises a substrate and a wrapping layer. The substrate is made of the following raw materials: graphite, aluminum oxide, aluminum nitride, silicon nitride, a nanometer carbon tube, silicon dioxide, kaolin, magnesium oxide, sodium carbonate, zirconium dioxide, light calcium, cellulose, dimethyl itaconate, binders, coupling agents, compatibilizers, anti-oxidants, tranquilizers, bridging agents, conditioning agents, reinforcing agents, coagulants, toughening agents, stabilizers, and terminating agents. The wrapping layer is made of the following raw materials: silicon carbide fiber, graphite, silicon dioxide, silicon nitride, sodium metasilicate, sodium cellulose glycolate, initiators, crosslinking agents, softening agents, adhesion agents, catalysts, and fire retardants. The heat sink material of the invention has good mechanical properties, excellent insulation, thermal conductivity and low expansion coefficient, and can be widely applied to heat sink material for LED heat guiding and radiating in semiconductor technology.