1 results about "Nickel sesquioxide" patented technology

The application belongs to the technical field of electronic materials, and specifically discloses a high-dispersion aluminum-doped zinc oxide voltage-dependent resistor material and a preparation method thereof. The high-dispersion aluminum-doped zinc oxide voltage-dependent resistor material comprises the following raw materials in parts by weight: pretreated zinc oxide 90-92 parts, bismuth trioxide 2-3 parts, cobalt oxide 0.7-0.9 parts, aluminum trioxide 1.5-1.8 parts, silicon dioxide 1.2-1.5 parts, manganese oxide 0.6-0.8 parts, tin oxide 0.07-0.09 parts, and nickel trioxide 0.2-0.5 parts. The pretreated zinc oxide reduces the agglomeration of zinc oxide, and the subsequent cooperation with other components improves the performance stability of the voltage-dependent resistor, reduces the leakage current, and prolongs the service life.