The invention provides a
light emitting diode and a preparation method thereof. The light-emitting
diode comprises an epitaxial structure, an
electrode structure and a
passivation layer, the
passivation layer covers the epitaxial structure, and the
electrode structure penetrates through the
passivation layer and is electrically connected with the epitaxial structure. The passivation layer comprises a first passivation sub-layer and a second passivation sub-layer, the first passivation sub-layer is a
silicon-aluminum
oxide layer, the second passivation sub-layer is a
silicon oxide layer, the surface compactness of the first passivation sub-layer formed by
silicon-aluminum oxidation is good, and the first passivation sub-layer serves as a buffer layer of the second passivation sub-layer, so that the deposition quality of the subsequently grown second passivation sub-layer is greatly improved; the second passivation sub-layer formed by the
oxide of silicon is an amorphous thin film, is compact, has no defects, is stable in property, and is favorable for isolating
water vapor. The double passivation
layers are good in
coating effect, uniform and compact in film quality and good in
moisture resistance and
corrosion resistance, the stability of the internal structure of an LED device in a high-
humidity environment is greatly improved, and the LED yield is improved.