60results about How to "Small impact resistance" patented technology

The invention discloses an organic fiber toughened inorganic composite artificial stone panel and a preparation method thereof. The panel comprises a surface layer, an intermediate organic fiber toughened layer, and a base toughened layer, wherein the surface layer comprises the following raw material components in parts by weight: 40-70 parts of quartz sand, 10-30 parts of a quartz powder, 20-45parts of an inorganic active powder, 0.5-4 parts of a pigment, 0.3-1 part of a water reducing agent, and 3-10 parts of water; the intermediate organic fiber toughened layer comprises the following rawmaterial components in parts by weight: 40-60 parts of the inorganic active powder, 45-65 parts of sand, 0.8-1.5 parts of the water reducing agent, 6-14 parts of water, and 4-8 parts of organic fibers; and the base toughened layer comprises the following raw material components in parts by weight: 30-50 parts of the inorganic active powder, 30-55 parts of the quartz sand, 15-20 parts of the quartz powder, 0.5-1.2 parts of the water reducing agent, 4-8 parts of water, 0.8-2.5 parts of a toughening agent. The panel has good volume stability, low shrinkage, no warping and deformation during use,extremely low water absorption, good durability, no problems such as aging, good adhesion between layers, and good ductility and no instant brittle fracture, can be used as a bearing structure, has good surface dirt resistance, and is suitable for popularization and use.

A method of fabricating a semiconductor device is provided. A substrate is first provided, and then several IO devices and several core devices are formed on the substrate, wherein those IO devices include IO PMOS and IO NMOS, and those core devices include core PMOS and core NMOS. Thereafter, a buffer layer is formed on the substrate, and then the buffer layer except a surface of the IO PMOS is removed in order to reduce the negative bias temperature instability (NBTI) of the IO PMOS. Afterwards, a tensile contact etching stop layer (CESL) is formed on the IO NMOS and the core NMOS, and a compressive CESL is formed the core PMOS.

The invention discloses a preparation method for a flexible organic light emitting diode (OLED), comprising the following steps: (1) a polyethylene terephthalate (PET) sheet is fixed at a support plate by binder as a base plate; the surface of the base plate is cleaned and dried; a barrier layer which is formed by successive alternating deposit of thin polymer films and thin inorganic material films with high transmittance is prepared on the base plate; the refractive index of the thin polymer films and the thin inorganic material films matches with the refractive index of the base plate; (2) an indium tin oxide (ITO) film and a metal layer are prepared at the base plate equipped with the barrier layer and etching of a metal line and an ITO line and making of polyimide (PI) patterns and RIB patterns are completed; during etching of the metal line and the ITO line, mechanical stirring or ultrasonic stirring are performed on the etching liquid; (3) then the base plate is put in an evaporation chamber for evaporation of an organic function layer and a negative electrode; (4) a thin film packaging layer is prepared on the surface of the negative electrode by vacuum evaporation and the packaging layer is formed by alternating deposit of at least one layer of organic material and at least one layer of inorganic material; and (5) the base plate is stripped off the support plate.