2results about How to "Strong reaction" patented technology

The invention belongs to the technical field of heavy metal passivators, and particularly relates to a heavy metal passivator applied to stabilization and oxidation resistance of a heap and a using method and application of the heavy metal passivator. The heavy metal passivator comprises dewatered sludge, livestock and poultry manure, biomass straw, a microbial agent, steel slag, industrial solid waste, Hangzhou cotton soil, coal ash, pelelith and chloroaluminate. Compared with the prior art, in the soil remediation process of the heavy metal passivator applied to pile stabilization and oxidation resistance, heavy metal ions enter a crystal structure formed by a chloroaluminate hydration product due to mineralization to form a replacement type solid solution, so that the heavy metal is in a very stable form in a new solidified body, and the heavy metal is more stable in the soil remediation process. The toxicity to the environment is reduced. In addition, means of smoldering, composting fermentation and the like are adopted in the use process, so that strong reaction can be carried out in a weak-base and normal-temperature environment in the heavy metal replacement process.

A method for removing a low-dielectric-constant material layer includes: providing a wafer to be cleaned, the surface of which has a low-dielectric-constant material layer; dry etching the wafer using oxygen plasma to reduce the methyl content in the low-dielectric-constant material layer; performing a first isotropic etching on the wafer for a first duration using an etching solution of a first concentration; and performing a second isotropic etching on the wafer for a second duration using the etching solution of a second concentration; wherein the second concentration is less than the first concentration, and the second duration is less than the first duration. This method can quickly and effectively remove the low-dielectric-constant material layer from the wafer surface and significantly reduce the number of particles on the cleaned wafer surface, making the wafer suitable for reuse, thereby improving efficiency and reducing costs.