The invention belongs to the technical field of production of
semiconductor chips, and in particular relates to a curing method for photosensitive resin BCB. The method comprises the following steps of
coating photosensitive BCB glue on the surface of an epitaxial
wafer, forming a photosensitive BCB glue pattern on the surface of the epitaxial
wafer by using a photoetching method; 2,
etching the photosensitive BCB glue on the surface of the epitaxial
wafer via a
plasma reaction; 3, placing the etched epitaxial wafer into an annealing furnace, inputting the
mixed gas of H2 and Ar for protection, raising the temperature from 50 DEG C to 275 DEG C in a multistage warming and heat-retaining manner, and keeping warm for 2h at the temperature of 275 DEG C; and 4, then increasing the flow for inputting the
mixed gas of H2 and Ar to quickly reduce the temperature of the annealing furnace to the
room temperature, and stopping inputting the
mixed gas of H2 and Ar, thus completing curing. According to the curing method for the photosensitive resin BCB provided by the invention, the multistage warming and heat-retaining manner is used, so that the BCB
polymerization reaction is more sufficient; and when in annealing, the mixed gas of H2 and Ar is used for replacing traditional N2 to serve as a protection gas, so that the possibility of oxidation and aging is reduced, and the BCB quality isimproved.