6results about How to "Enough energy" patented technology

The utility model relates to the field of batteries, and particularly discloses a lithium manganese dioxide battery which comprises a winding type battery cell, and the winding type battery cell comprises a manganese dioxide positive plate, a negative plate and a diaphragm; the manganese dioxide positive plate is wound, the diaphragm wraps the outer side of the manganese dioxide positive plate, and the negative belt wraps the outer side of the diaphragm; the negative electrode strip comprises a negative electrode lithium strip and a copper strip, and the copper strip is pressed on the negative electrode lithium strip. The copper strip is pressed on the negative electrode lithium strip to form the negative electrode strip, and the copper strip cannot be broken when the battery vibrates, so that the functions of collecting and conducting electrons can be maintained, the negative electrode strip can provide enough energy, a unique winding form is combined, the thickness of the negative electrode lithium strip is increased, the structural strength of the negative electrode lithium strip is improved, and the service life of the battery is prolonged when the battery vibrates. Therefore, the anti-seismic property of the winding type battery cell is improved, and the anti-seismic property of the lithium-manganese dioxide battery is further improved.

The present application relates to bolt processing equipment technical field, the present application provides a punch for manufacturing bolt, including support base plate and the support base that is rotationally connected with workbench, multiple forming die cavities with receiving slide block are equipped on workbench along circumference. The support base plate is equipped with feeding mechanism, stamping mechanism and ejecting mechanism; feeding mechanism and stamping mechanism are driven through same motor, feeding mechanism is used for cutting off and sending into forming die cavity with steel wire; stamping mechanism is used for forming to blank, receiving slide block is used for avoiding the flash of bolt; ejecting mechanism is used for ejecting from die cavity with forming bolt. The present application integrates feeding cutting, stamping and ejecting in one, realizes multi-station synchronous continuous processing through rotary workbench, greatly improves production efficiency; at the same time, the receiving slide block is used to form closed cavity with die cavity, effectively prevents the flash from generating, guarantees the forming precision and surface quality, realizes the efficient, high-precision automatic manufacturing of bolt.

This invention discloses a crystalline polyimide / polyimide composite material, its preparation method, and its applications. The method involves first uniformly mixing phenylhexacarboxylic acid trihydride with a diamine monomer, followed by a solid-phase reaction under argon atmosphere protection. After the reaction, the product is immersed in a polar solvent to obtain crystalline polyimide. Then, the crystalline polyimide is added to an organic solution of polyamic acid, subjected to ultrasonic treatment in an ice-water bath, and subsequently thermosetting to obtain the crystalline polyimide / polyimide composite material. The crystalline polyimide in this composite material has a layered two-dimensional COF structure, giving it relatively high thermal conductivity, heat resistance, and high-temperature mechanical properties. Introducing the crystalline polyimide into the polyamic acid solution utilizes the special interfacial compatibility between the amino groups in the crystalline polyimide and the anhydrides in the polyamic acid to react, solving the problem of difficult processing and effectively expanding its application range.

The invention relates to the technical field of crystal material preparation, in particular to a ternary layered selenide Ge < 0.85 > Bi < 2.15 + x > Se < 4 > semiconductor material and a preparation method thereof. The preparation method comprises the steps that germanium powder, bismuth powder and selenium powder are weighed according to the molar ratio in the chemical formula Ge0. 85Bi2.15 + xSe4, x is larger than or equal to 0 and smaller than or equal to 0.06, the weighed raw materials are evenly mixed and then placed in a quartz tube, and the quartz tube is sealed after vacuumizing; placing the vacuum-sealed quartz tube in a heating furnace, raising the temperature from room temperature to 900-950 DEG C, preserving heat for 12-24 hours at the temperature, and taking out the quartz tube from the heating furnace for quenching and cooling after the heat preservation is finished; and placing the quenched and cooled quartz tube in the heating furnace again, raising the temperature from room temperature to 540-560 DEG C, preserving heat for 3-5 days at the temperature, and performing annealing treatment to obtain the ternary layered selenide Ge0. 85Bi2.15 + xSe4 semiconductor material. According to the preparation method, the technical problem that a GeBi2Se4 system is difficult to obtain a single phase is successfully solved by accurately regulating and controlling the proportion of Ge / Bi and adopting a high-temperature quenching and low-temperature long-time annealing process.

This invention discloses an ultra-large aperture, large target surface, thermal-free long-wave infrared optical system suitable for 8µm pixel modules, comprising, from object to image: a first lens L1, a second lens L2, a third lens L3, a fourth lens L4, and a fifth lens L5; the first lens L1 is a meniscus aspherical lens with negative optical power and a convex surface bent towards the object; the second lens L2 is a meniscus aspherical lens with negative optical power and a convex surface bent towards the image; the third lens L3 is a meniscus aspherical lens with positive optical power and a convex surface bent towards the object; the fourth lens L4 is a plano-convex diffraction lens with positive optical power and a convex surface bent towards the object; and the fifth lens L5 is a meniscus aspherical lens with negative optical power and a convex surface bent towards the object. The optical system of this invention features an ultra-large aperture, sufficient energy, high sensitivity, and high spatial resolution; it has a large target surface field of view and can be matched with a 15.36mm×8.64mm target surface long-wave camera; under the premise of large aperture, it achieves a thermal design with a temperature range of -40℃ to 80℃; and it has excellent image quality.

This invention proposes a clean and low-carbon winter heating system for cold regions, utilizing the fermentation heat of agricultural and livestock waste as energy, belonging to the field of clean and low-carbon heating. It solves the problems of heating pollution in northern winters and the difficulty in cleanly treating agricultural and livestock waste. This invention employs an intermittent fermentation heat utilization mode, with a heat utilization efficiency greater than 60%. The aerobic fermentation process is both a production and energy consumption process. Excessive heat discharged from the system with moist steam can cause the fermentation system temperature to drop too low, affecting the production process. By intermittently extracting and venting steam, the rate at which the system controls the heat carried away by the moist steam can be controlled, ensuring sufficient energy consumption for the system itself, thereby ensuring the stability of the indoor heating energy source and improving the utilization rate of heat energy. This invention has a simple structure, conforms to building configurations, is easy to operate, and can be widely promoted.