129results about How to "Short melting time" patented technology

The invention relates to braze welding Si3N4 ceramics containing the boron Ti-based amorphous solder and the preparation method thereof, and belongs to the brazing material in the field of amorphous state and metallurgy. The ingredients of the brazing material consist of the following according to the mass percent: Zr of 12.0-28.0 percent, Ni of 12.0-28.0 percent, Cu of 12.0-28.0 percent, and B of 0.05-0.5 percent, and the remains is Ti. The melting scope of the brazing material ranges 1,150K to 1,250K, and the brazing temperature is from 1,273K to 1,373K. The Ti-Zr-Ni-Cu-B amorphous braze vacuum braze welding Si3N4 ceramics, which is produced by the rapid solidification technology, has superior high-temperature performance to Ag-Cu-Ti solder and Ti-Zr-Ni-Cu solder. The tie-in high-temperature bend strength reaches 145MPa under 673K DEG,108MPa under 773K DEG, and still 93MPa under 873K DEG.

The invention discloses active amorphous brazing filler metal for brazing ZrB2-SiC ceramic materials, a preparation method for the active amorphous brazing filler metal and a brazing process, particularly relates to Cu-Ti-Ni-Zr high-temperature active amorphous brazing filler metal for brazing ZrB2-SiC ultra-high-temperature ceramic materials, a preparation method for the Cu-Ti-Ni-Zr high-temperature active amorphous brazing filler metal and a brazing process, and belongs to brazing filler metal in the amorphous and metallurgy fields. The components of the brazing filler metal comprise, by atomic percentage, 36.0-42.0% of Cu, 30.0-35.0% of Ti, 16.0-23.0% of Zr and the balance Ni. The melting temperature of the active amorphous brazing filler metal is 1110-1150 K, and the brazing temperature is 1183-1273 K. The Cu-Ti-Ni-Zr high-temperature active amorphous brazing filler metal obtained through the rapid condensation technology has good wettability. The room temperature shearing strength of the ZrB2-SiC ultra-high-temperature ceramic materials brazed through the amorphous brazing filler metal in a vacuum brazing mode can be as high as 160 MPa and much higher than that of Cu-based and Ag-based brazing filler metal.

The invention discloses an analysis fluxing agent for melting metallurgical samples, and a preparation and using method thereof; the analysis fluxing agent is prepared with a main fluxing agent and an auxiliary fluxing agent, wherein, the contents of anhydrous sodium carbonate and boric acid reach 85.80% to 100%; the content of the auxiliary flux agent nitrate ammonium or potassium nitrate is 0 to 14.20%; the invention can be used to melt and decompose vanadium-titanium magnetite, vanadium-titanium-bearing slag, high-titanium slag, metallurgical auxiliary material, refractory material, vanadium slag, non-ferrous metal ores and other metallurgical samples; the flux agent of the invention has the advantages of less material adoption, simple preparation method, low cost, simple operation, short melting time, as well as good melting and decomposition effect; the melted samples are of easy acid leaching and decomposition, wide application and convenient using.

The invention relates to a method for producing a monocrystalline or polycrystalline semiconductor material by way of directional solidification, wherein lumpy semiconductor raw material is introduced into a melting crucible and melted therein and directionally solidified, in particular using the vertical gradient freeze method.

In order to prevent contamination and damage, the semiconductor raw material is melted from the upper end of the melting crucible. The molten material trickles downward, so that semiconductor raw material which has not yet melted gradually slumps in the melting crucible. In this case, the additional semiconductor raw material is replenished to the melting crucible from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted, in order at least partly to compensate for a volumetric shrinkage of the semiconductor raw material and to increase the filling level of the crucible.

In order to reduce the melting-on time and to influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated by the purposeful introduction of heat to a temperature below the melting temperature of the semiconductor raw material and introduced into the container in the heated state.

The invention discloses a new composite poultry depilatory and the method for making and using the same, mainly to solve problem of difficulty to remove small hair from pig head, hog hoofs, and other poultries. The product comprises rosin glycerine cream, animal oil and fat and ceresin wax, and is characterized by high hair removing rate, safe, non toxic and convenient usage.

The invention provides a preparation method for pelletizing and producing yellow phosphorus by a phosphorus ore concentrate which comprises the following components in terms of producing 1000 Kg of yellow phosphorus: 7100-8500 Kg of phosphorus ore concentrate powder, 1800-2000 Kg of coke dust, 1800-3300 Kg of silica powder, 130 Kg of humic acid and 65 Kg of sodium hydroxide. The preparation method is as follows: grinding formula components by a ball mill; adding a binder composed of the humic acid and the sodium hydroxide, and evenly stirring; processing into a compound pellet by a ball pressing and forming machine; dying by a chain plate dryer; and sending into a yellow phosphorus electric furnace to prepare into a yellow phosphorus finished product. The invention fully utilizes powder phosphate ores and low-grade phosphate ores; the phosphorus ore concentrate powder obtained by mineral separation is produced into a pellet by the binder, and then the pellet is prepared into yellow phosphorus by the electric furnace. Compared with the existing phosphorus preparation by a phosphorus ore concentrate, the invention lowers cost by one time, reduces CO emission by about 35%, reduces electricity consumption by about 40%, improves capacity by 2 times and reduces materials by about 40%. Thus, the invention is an excellent method for solving the problems of high energy consumption, high emission and high pollution for yellow phosphorus production in China.

The invention discloses a method for welding battery tabs and a busbar, and belongs to the technical field of laser welding. The method comprises the following steps: attaching the battery tabs to thebusbar and keeping the battery tabs relatively fixed; selecting a laser welding device, wherein the diameter of a transmission optical fiber core of the laser welding device is less than or equal to30 microns, the optical amplification ratio of a laser beam is 1: (1-3), and the output power of a laser is 500-2000W; and carrying out curve track welding on laser beam spots along to-be-welded areasof the battery tab and the bus bar, wherein the welding speed is more than or equal to 50 mm/s. By adopting smaller laser beam spots and higher welding speed, the welding time of a welded workpiece is short, few intermetallic compounds are generated, the welding strength between the workpieces is high, and the electric conductivity is high. The welding track of the curve stripes is adopted for laser welding, so that the welding track is increased, and the connecting area of welding seams is increased. The welding method reduces the welding cost of a battery module.

The invention relates to a hypoeutectic Al-Si alloy material for an all-aluminum engine of a high-grade car and a preparation method of the hypoeutectic Al-Si alloy material. The hypoeutectic Al-Si alloy material with high strength and high toughness is researched by adding Cu and Mn strengthening elements and a Sr modification element, improving an industrial silicon melting process and adopting a process for removing gas and residues in a furnace and a casting process and a technology for detecting refinement and modification of alloy on line through thermal analysis. The hypoeutectic Al-Si alloy material has the tensile strength of 338-345Mpa and the elongation rate of 8.5-9.2% and can be completely applied to the all-aluminum engine of the high-grade car at home and abroad.

The invention relates to an innocent treatment method for arsenic containing mixed salt. The method comprises the following steps of: (1) uniformly mixing arsenic containing mixed salt and slag or/and cullet, and controlling the content of arsenic in the mixed material at1.0-4.8wt% to obtain a mixed material; (2) feeding the mixed material into a furnace, heating to 1150-1250 DEG C, and insulating and melting for 0.4-2.4 hours to obtain melt; and (3) pouring the melt to a die to prepare solid or entering into water for water-quenching while the melt is still hot to obtain particle arsenic containing solid. The method for treating the arsenic containing mixed salt is free from environmental hidden danger, and free from secondary pollution, and the whole process is simple in flow, short in processing time, simple and convenient to operate, low in energy consumption, and suitable for industrialized production.

The invention relates to high-temperature melting equipment and in particular relates to high-temperature melting equipment for preparing nano glass powder. Aiming at solving the technical problems, the invention provides the high-temperature melting equipment for preparing the nano glass powder, which is simple to operate, rapid in melting speed and uniform in melting. In order to solve the technical problems, the high-temperature melting equipment for preparing the nano glass powder, provided by the invention, comprises a left frame, a first bearing seat, a bottom plate, a bracket, a melting box, a discharging pipe, a rocking handle, a first rotary shaft, a winding wheel, a first slide block, a pull wire, a first slide rail and the like; the left frame is welded at the left end of the top of the bottom plate; a left side of the top of the bottom plate is connected with the first bearing seat through a connection manner of a bolt. The high-temperature melting equipment for preparing the nano glass powder has the effects of simplicity in operation, short melting time and uniform melting; a worker can realize rapid melting of glass raw materials through utilizing the equipment; the high-temperature melting equipment is simple and convenient to operate and time and labor are saved.

Agglomeration of a polycrystalline silicon film is eliminated at the time of obtaining a high quality polycrystalline silicon film by forming a silicon layer on an insulating film substrate and conducting long-term melting and re-crystallization. For this purpose, a layer or a plurality of layers of an underlayer UCL are provided on an insulating substrate GLS, the area near the surface in contact with a precursory silicon film PCF provided on this underlayer UCL is formed as an insulating film UCLP showing a film composition to improve the wettability of the melted silicon layer, and thereafter a high quality polycrystalline silicon film PSI is formed through elimination of agglomeration by melting of the precursory silicon film PCF using a laser beam LSR.

The invention relates to a compound type poultry depilating agent prepared from the following components in parts by weight: 65-75 parts of food grade glycerol ester of rosin, 22.5-29 parts of food grade paraffin, 0.5-1.5 parts of food grade silicone grease and 5-10 parts of animal fat. The materials adopted in the invention meet specifications in national food safety, a product after poultry is processed completely meets specifications in the national safety standard, and the product is clean and non-toxic and can completely meet health requirements of consumers. The depilating agent disclosed by the invention has the advantages of low melting point, short melting time, easiness for operation and applicability to large-scale production.

The invention discloses a high-content manganese additive used for producing aluminum alloy and a preparing method of the high-content manganese additive. The manganese additive in a cake shape or rugby shape and formed by pressing raw material powder. The raw material powder comprises manganese powder, aluminum powder, iron powder and fluxing agents. The manganese powder, the aluminum powder, the iron powder and the fluxing agents are crushed under protection of inert gas, and the high-content manganese additive further comprises a surfactant. According to the high-content manganese additive, by mass, the manganese powder accounts for 86%-97%, the aluminum powder accounts for 2.39%-6.39%, the iron powder accounts for 0%-6%, the fluxing agents account for 0.01%-0.05%, and the surfactant accounts for 0.5%-2%. The density of the formed high-content manganese additive ranges from 3.0 g/cm<3> to 5.0 g/cm<3>. The method includes the steps of 1, crushing, 2, material preparing, 3, material mixing, 4, pressing, 5, drying, 6 packaging and the like. When the high-content manganese additive is dissolved into molten aluminum, the melting temperature is low, the melting time is short, and the recovery rate of manganese is high.

The invention relates to a bending processing method for a small-caliber thin-wall waveguide tube, comprising the following steps: S1, filler refining: S11, material preparation: preparing the following components in parts by weight: 22-28 parts of Pb, 10-14 parts of Sn, 47-53 parts of Bi, and 11-15 parts of Cd; S12: heating for smelting: putting into a heating kettle for heating and smelting, sufficiently stirring during smelting, adding mica sheet and rosin, pouring into the container in molten state, and cooling for crystallization in room temperature to obtain low-melting-point alloy filler; S2, filler filling: S21, fixing a waveguide tube; S22, melting the low-melting-point alloy filler; S23, smearing machine oil; S24, filling; S3, bending formation; S4, filler recovery; S5, waveguide tube cleaning, thus obtaining the waveguide tube after bending formation. The bending processing method has the advantages of being short in production cycle, good in bending formation effect and recyclable in filler.

The invention discloses a waste PCB component disassembly and soldering tin recovery device. The device comprises a heating box; a heating cavity with an upward opening is formed in the heating box; asoldering tin heating device for heating and melting soldering tin is arranged in the heating cavity; a soldering tin recovery device for recovering the soldering tin is arranged on the left side endsurface of the heating cavity; a component disassembly device is arranged on the upper side of the heating cavity; the component disassembly device is used for shifting PCBs into the heating cavity for heating; and an overturning device for overturning the PCBs is arranged in the component disassembly device. Oil is adopted to heat the PCBs; the soldering tin recovery mechanism can melt the soldering tin in the heating box to reach a certain quantity for automatic recovery; the liquid level of the heated oil is maintained in a certain range to guarantee the stability of the heating effect ofthe PCBs; and the device can recover components and the soldering tin from waste PCBs to greatly simplify the recovery process of the soldering tin on the PCBs.

The invention discloses a preparation method of high-performance glass fiber. The preparation method comprises the following steps: weighing a compound of silicon, aluminum, magnesium, calcium, zirconium, titanium, ferrum, cerium, yttrium, niobium, lithium, bismuth and boron, wherein the water-soluble compound is not less than 10% of the total molar quantity of all the compounds; then adding deionized water, and by taking zirconium oxide grinding balls as a grinding medium, sequentially performing ball grinding, spray drying, calcination, isostatic pressing treatment, fusing, wire drawing and other processes. The water-soluble compound evenly coats the surfaces of other compounds in a manner of ions through ball grinding mixing and spray drying, then nanoscale particles can be obtained after calcination. Under the high specific surface energy action of the nanoparticles and isostatic pressing, all the components are closely contacted, and the fusion temperature and fusion time of the glass can be obviously reduced, so that the energy consumption needed in the production of the glass fiber can be reduced.

The invention discloses an electrical equipment connector lead temperature measuring device prepared by adopting a fusible alloy. The electrical equipment connector lead temperature measuring device comprises a left arc elastic clamping piece and a right arc elastic clamping piece. The electrical equipment connector lead temperature measuring device is characterized in that semi-circular curved sections of the lower ends of the arc elastic clamping pieces are both provided with coil springs enabling lower end clamping openings of the left and right arc elastic clamping pieces to be clamped tightly; the middle of a base plate surface of a round seat plate is provided with an overtemperature sign cylinder the outer side of which is sleeved by a cylindrical seal cap; the center of the cylindrical seal cap is provided with a core rod sleeved with a compression spring; the part, passing through a central through hole of the round base plate, of the core rod is sleeved with a fusible alloy ring; a heat conduction screw cap is screwed tightly on the upper end of the core rod. The device can be installed under the condition that a high-voltage power transformation device runs with power, furthermore, because the fusible alloy is adopted as a temperature test material, the device has the advantages of accurate fuse point, narrow range, response sensitivity and short fuse time; moreover, the fuse point can be adjusted according to seasons, the influences by natural temperature rise can be eliminated, and the fault temperature rise can be judged more accurately; the device is easy to install, is flexible and convenient to use, and has an obvious warning effect.

The invention discloses a preparation method of bismuth-containing paramagnetic Faraday optical rotation glass. The preparation method comprises the following steps of: firstly, uniformly mixing Er2O3, Bi2O3, B2O3, Al2O3, SiO2, Sb2O3 and ZrO2 to obtain a batch; secondly, fusing the batch to obtain molten glass, dropping the molten glass into a graphite mould, thermally insulating at 550 DEG C for 3 hours, and cooling to room temperature to obtain the bismuth-containing paramagnetic Faraday optical rotation glass. According to the invention, the bismuth-containing paramagnetic Faraday optical rotation glass is prepared by adopting a fusing and pouring method, owing to bismuth oxide with large molecular weight and low melting point, a forming range of the glass is expanded and the fusing temperature is reduced. The prepared Faraday magneto-optical glass has high content of rare earth erbium oxide, excellent glass forming property, remarkable Faraday effect and large Verdet constant, and the test sample has high light transmittance in a visible light range, and excellent heat stability and chemical stability. The preparation process has the advantages of simple operation process, low founding temperature, small high-temperature viscosity in the glass fusing process, short fusing time, excellent forming property, low cost, energy conservation and environmental friendliness and is suitable for industrial production.

The invention relates to a method for producing a monocrystalline or polycrystalline semiconductor material by way of directional solidification, wherein lumpy semiconductor raw material is introduced into a melting crucible and melted therein and directionally solidified, in particular using the vertical gradient freeze method. In order to prevent contamination and damage, the semiconductor raw material is melted from the upper end of the melting crucible. The molten material trickles downward, so that semiconductor raw material which has not yet melted gradually slumps in the melting crucible. In this case, the additional semiconductor raw material is replenished to the melting crucible from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted, in order at least partly to compensate for a volumetric shrinkage of the semiconductor raw material and to increase the filling level of the crucible. In order to reduce the melting-on time and to influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated by the purposeful introduction of heat to a temperature below the melting temperature of the semiconductor raw material and introduced into the container in the heated state.