The invention relates to the technical field of
photoresist, in particular to
photoresist for a capacitive touch sensor and a preparation process of the
photoresist. The invention discloses a preparation process of photoresist for a capacitive touch sensor. The preparation process comprises the following steps: preparing a modified photoreaction agent; preparing modified
polyimide resin
powder; preparing
silicon dioxide hollow carbon spheres and nano
titanium dioxide
hybrid particles; and preparing the photoresist. The preparation method comprises the following steps: firstly carrying out
nitration reaction on 4-tert-butylphenol, then reducing
nitryl into amino to obtain amino substituted 4-tert-butylphenol, protecting the amino by di-tert-butyl
dicarbonate ester, then oxidizing
iodobenzene into a high-valence
iodine active intermediate by taking m-chloroperoxybenzoic acid as an
oxidizing agent, and reacting with Boc-amino substituted 4-tert-butylphenol to obtain the high-valence
iodine-substituted 4-tert-butylphenol. And finally, carrying out a replacement reaction with
silver trifluoromethanesulfonate, carrying out deprotection to obtain a modified photoreaction agent, and carrying out a condensation
polymerization reaction on the modified photoreaction agent, 4, 4 '-hexafluoroisopropyl
phthalic anhydride and the like to generate a
polyamic acid prepolymer, so that the photoetching resolution can be greatly improved.