The invention relates to a preparation method of a piezoelectric
ceramic with a high
Curie temperature and a film thereof. The
chemical formula of the prepared piezoelectric
ceramic material is (1-x)(BiMg<1 / 2>Ti<1 / 2>O<3>)-x(PbTiO<3>)-yMe, wherein 0.3<=x<=0.45, 0<=y<=0.05, and Me represents a modifying element.
Bismuth salts,
magnesium salts, lead salts,
chromium salts, or / and
manganese salts and organic
titanium salts are taken as the primary raw materials; through selecting a proper dispersing medium and controlling the solution temperature and concentration and addition sequence, the
metal salts form uniform
sol through the chelating effect of a stabilizing agent, then the
sol is concentrated, dried and calcined to obtain piezoelectric nano
powder with a high
Curie temperature, and the piezoelectric nano
powder is ball-grinded, dried, screened, pressed, and sintered to prepare piezoelectric
ceramic with a high
Curie temperature. Or through various solution methods such as
spin coating, infiltrating, and the like, uniform
sol is painted on an inorganic substrate to prepare a film, and then the substrate is dried and annealed to prepare a piezoelectric ceramic film. The prepared piezoelectric ceramic film can be used to prepare various related piezoelectric devices with a work temperature higher than 200 DEG C such as
energy converter, sensor, and the like, and has a wide application prospect.