The invention relates to a preparation method of a piezoelectric ceramic with a high Curie temperature and a film thereof. The chemical formula of the prepared piezoelectric ceramic material is (1-x)(BiMg<1/2>Ti<1/2>O<3>)-x(PbTiO<3>)-yMe, wherein 0.3<=x<=0.45, 0<=y<=0.05, and Me represents a modifying element. Bismuth salts, magnesium salts, lead salts, chromium salts, or/and manganese salts and organic titanium salts are taken as the primary raw materials; through selecting a proper dispersing medium and controlling the solution temperature and concentration and addition sequence, the metal salts form uniform sol through the chelating effect of a stabilizing agent, then the sol is concentrated, dried and calcined to obtain piezoelectric nano powder with a high Curie temperature, and the piezoelectric nano powder is ball-grinded, dried, screened, pressed, and sintered to prepare piezoelectric ceramic with a high Curie temperature. Or through various solution methods such as spin coating, infiltrating, and the like, uniform sol is painted on an inorganic substrate to prepare a film, and then the substrate is dried and annealed to prepare a piezoelectric ceramic film. The prepared piezoelectric ceramic film can be used to prepare various related piezoelectric devices with a work temperature higher than 200 DEG C such as energy converter, sensor, and the like, and has a wide application prospect.