The invention discloses a binary and multi-valued
memristor based on HfO2-x, a preparation method, and an application of the binary and multi-valued
memristor. The
memristor comprises an upper
electrode, a function layer, and a lower
electrode. An HfO2-x material which has different grown-in
oxygen vacant sites is prepared through the control of the proportion of
argon to
oxygen. In a DC scanning mode, an HfO2-x memristor with the low
atomic ratio does not need to be preprocessed, is low in operation
voltage and has the gradual-change resistance transition, but an HfO2-x memristor with the high
atomic ratio is larger in window, and is sharper in resistance transition. Memristors in different resistance transition forms employ a continuous high-speed pulse and continuous multi-window pulse testing method to verify the binary and multi-valued mode. The resistance transition different represented by the memristor of the above type is of guide significance to the
atomic ratio in different mode application occasions. The method can be used for logic calculation and neural morphology storage. The
fine tuning of the proportion of deposition
atmosphere is carried out under the same
material technology, and the calculation and storage modules can be integrated in the same
chip, thereby further speeding up the development of a calculation and storage integrated
chip.