49results about How to "Synthetic method is convenient" patented technology

The invention discloses a method for synthesizing irbesartan and an intermediate thereof, and belongs to the technical field of preparation methods for medicines. The method comprises the following steps of: protecting 5-(4'-methylbiphenyl-2-yl)-2-(1-methyl-1-phenylethyl)tetrazole by using alpha-methyl styrene under the catalysis of organic acid through the novel convenient reaction process, brominating a benzyl group, condensing a solid phase and a liquid phase under phase transfer to obtain irbesartan protected by 1-methyl-1-phenylethyl, performing acid hydrolysis on the protection to obtain the irbesartan and 2-phenyl-2-propanol, and recovering the 2-phenyl-2-propanol to obtain the alpha-methyl styrene. The invention has the advantages that: the synthetic process is suitable for industrial production, economic value can be produced, the synthetic process is safe, the cost for raw materials is saved, the subsequent product can be easily treated, the reaction raw material is single, and the synthetic method is convenient.

The invention discloses an asymmetric synthesis method of chiral compounds derived from trans-tetrahydrofuran / pyranotetrahydroquinoline. The method uses 5-o-hydroxyphenyl-4-ene-1-pentanol derivatives and o- The aminobenzaldehyde derivative is reacted under the action of a chiral phosphoric acid catalyst to obtain a chiral compound derived from trans-tetrahydrofuran / pyranotetrahydroquinoline. The present invention provides an efficient, simple and convenient method for the first synthesis of trans-tetrahydrofuran / pyranotetrahydroquinoline derived chiral compounds by adopting dearomatization, Prins cyclization and aza-Michael addition series reaction modes resolve resolution. The method of the invention is simple to operate, and the reaction conditions are mild, and two new heterocycles, three new chemical bonds (C-O, C-C, C-N) and three adjacent quaternary carbon chirals are constructed in the one-pot reaction. A series of chiral compounds derived from trans-tetrahydrofuran / pyranotetrahydroquinoline were constructed.

The invention discloses a nano-cuprous oxide / silk fibroin complex and a preparation method thereof, which is characterized in that the main raw materials for preparing the complex include: 1.0-2.0 parts of silk fibroin, copper sulfate pentahydrate 0.5-2 parts, sodium hydroxide 0.58-1.92, vitamin C 0.7-2.8 parts. The preparation steps include: dissolving silk fibroin in deionized water to prepare a silk fibroin solution; preparing copper sulfate pentahydrate into a copper sulfate solution, adding it to the silk fibroin solution and stirring evenly, and then adding sodium hydroxide solution to adjust the pH value 10-12; vitamin C is formulated into a solution and added to the solution obtained in the above step (2), reacted at room temperature for 30-60 hours, dialyzed for 2-4 days, and freeze-dried to obtain nano-cuprous oxide / silk fibroin porous sponge. It can effectively hinder the agglomeration of nano-cuprous oxide particles, increase the stability of nano-cuprous oxide, prevent its oxidation, and prepare materials with various shapes.

The invention discloses a polypyrrole / nickel hydroxide / foamed nickel integrated electrode and preparation method thereof. The polypyrrole / nickel hydroxide / foamed nickel integrated electrode is formed by loading foamed nickel with polypyrrole and nickel hydroxide, the total load amount of the polypyrrole and the nickel hydroxide on the foamed nickel is 0.9% to 1.4%, and the mass ratio of the polypyrrole to the nickel hydroxide is 1:3 to 2:1. An electrochemical test is performed on the integrated electrode, the electrode has excellent electrochemical performance, as the amount of polypyrrole increases, the specific capacitance of a material increases first and then decreases, and when the molar ratio of nickel nitrate to hexamine is 1:1 and the pyrrole monomer concentration is 0.05mol L<-1>, the specific capacitance of the electrode under the electric current density of 2A g<-1> reaches up to 2174F g<-1>, and the highest specific capacitance retention rate is achieved.