The invention discloses a process for preparing a kind of 
gallium nitride nanoline of high purity, which employs 
gallium oxide (Ga2O3) as 
raw material, alkaline air (NH3) as reacting gas, 
inert gas 
argon gas (Ar) as protective gas, 
silicon board as base carrier for product growing, absolute ethyl 
alcohol, 
acetone and deionized water as 
cleaning agent for the sicicon board, and employs no accelerating agent; the 
gallium nitride nanoline grows out under the temperature of 950 Deg C and on the 
silicon board through ammonification reaction; the preparing process is simplified by 
grinding, sifting the 
raw material, cleaning the 
silicon board and 
quartz material, controlling the air extraction, 
argon gas and alkaline air inputting by tubing high temperature furnace control device procedurally, which prevents the 
side product generating effectively and increases the product outcome, purity and quality and finally getting the 
gallium nitride nanoline of light yellow, 
solid and in linary shape; the product is characterized by the uniform shape, order arrangement, and stable optical, chemical and 
physical property; the invention is characterized by the short preparing process, high yield (reaching to 95%), high purity (reaching to 98.6%) and the high linary accuracy, with the 
diameter being 5-20 cm, the average length of the monoline 30-50 ª–m.