The invention discloses a process for preparing a kind of
gallium nitride nanoline of high purity, which employs
gallium oxide (Ga2O3) as
raw material, alkaline air (NH3) as reacting gas,
inert gas
argon gas (Ar) as protective gas,
silicon board as base carrier for product growing, absolute ethyl
alcohol,
acetone and deionized water as
cleaning agent for the sicicon board, and employs no accelerating agent; the
gallium nitride nanoline grows out under the temperature of 950 Deg C and on the
silicon board through ammonification reaction; the preparing process is simplified by
grinding, sifting the
raw material, cleaning the
silicon board and
quartz material, controlling the air extraction,
argon gas and alkaline air inputting by tubing high temperature furnace control device procedurally, which prevents the
side product generating effectively and increases the product outcome, purity and quality and finally getting the
gallium nitride nanoline of light yellow,
solid and in linary shape; the product is characterized by the uniform shape, order arrangement, and stable optical, chemical and
physical property; the invention is characterized by the short preparing process, high yield (reaching to 95%), high purity (reaching to 98.6%) and the high linary accuracy, with the
diameter being 5-20 cm, the average length of the monoline 30-50 ª–m.