The present invention discloses a cleaning composition with low etching performance, which is characterized by comprising: a quaternary ammonium hydroxide, alkyl glycol aryl ether or derivatives thereof, and acetophenone or derivatives thereof which is represented by the following formula I, wherein R5 and R6 represent H, hydroxyl, C1-C12 alkyl or C1-C2 hydroxyalkyl, the alkyl glycol aryl ether or derivatives thereof are ethylene glycol monophenyl ether, propylene glycol monophenyl ether, iso-propylene glycol monophenyl ether, diethylene glycol monophenyl ether, dipropylene glycol monophenyl ether, di-iso-propylene glycol monophenyl ether, ethylene glycol monobenzyl ether, propylene glycol monobenzyl ether, propylene diphenyl ether, iso-propylene glycol diphenyl ether, diethylene glycol diphenyl ether, dipropylene glycol diphenyl ether, di-iso-propylene glycol diphenyl ether, ethylene glycol dibenzyl ether or propylene dibenzyl ether. The inventive cleaning composition with low etching performance can be used for removing photoresist (light resistance) and other residue on the metal, metal alloy or dielectric substrate, meanwhile has lower etching speed to the silica, metal such as copper and low k material, and has good application prospect in the micro-electronics field such as semiconductor wafer cleaning.