55 results about "Dibenzyl ether" patented technology

The invention relates to a process for the preparation of hydroxybenzoic benzyl esters by reacting dibenzyl ethers with alkylcarbonyloxybenzoic or alkoxycarbonyloxybenzoic acids and optionally anhydrides thereof in the presence of one or more acids as catalyst.

This invention has disclosed a kind of producing method for substituted dibenzyl ether. This method adopts substituted benzyl halogen react with water to produce substituted dibenzyl ether directly by the catalyst of metal halide. It does not use alkali substance, after separate and concentrate, procreant HX can be regenerated. This method is simple and environmental protection, costs little.

The invention discloses a method for preparing 4, 4'-dimethyl dibenzyl ether. The method comprises the following steps: 1) adding p-methyl benzyl chloride, an alkali solution and a phase transfer catalyst in a reaction vessel, and full reacting at 106-122 DEG C; 2) cooling and crystallizing reaction liquid, conducting pumping filtration and air drying to obtain a 4,4'-dimethyl dibenzyl ether crude product; and 3) recrystallizing the 4, 4'-dimethyl dibenzyl ether crude product to obtain the 4,4'-dimethyl dibenzyl ether finished product. The preparation method has simple process, high efficiency, and low production cost, and is easy for industrial production.

The invention discloses a high-selectivity green hydrolysis technology for preparing benzyl alcohol. The high-selectivity green hydrolysis technology includes the steps that sodium formate, benzyl chloride, water and organic tertiary amine catalysts are put into a reactor in the molar ratio of (1.05-1.1):1:7.0:0.02, sufficiently mixed and stirred, and subjected to normal-pressure reacting for 8 h to 9 h at the temperature of 100 DEG C to 115 DEG C, heating is stopped, the temperature is reduced to be 95 DEG C to 105 DEG C, caustic soda with the molar weight equal to the molar weight of the benzyl chloride is put, and the mixture continues to be reacted for 2 h to 3 h; the reacted mixture is filtered, solid sodium chloride is removed, the liquid-phase product is cooled, and the organic-phase product is separated; the organic-phase product is subjected to rectification separation, and the high-purity benzyl chloride is obtained; the water-phase product is returned to the reactor again, and repeated hydrolysis reacting is carried out after the raw materials are supplemented; According to the high-selectivity green hydrolysis technology, the benzyl chloride is subjected to hydrolysis with the sodium formate as an assistant and the organic tertiary amine as a catalyst to prepare benzyl alcohol, and the adopted organic organic tertiary amine catalysts are low in price and high in catalysis efficiency; the water-phase product obtained through the reaction can be recycled, high-salt wastewater in the production process of the benzyl alcohol is solved, and meanwhile the content of the dibenzyl ether is greatly reduced, wherein the content of the dibenzyl ether is lower than 3.5%.

The present invention discloses a cleaning composition with low etching performance, which is characterized by comprising: a quaternary ammonium hydroxide, alkyl glycol aryl ether or derivatives thereof, and acetophenone or derivatives thereof which is represented by the following formula I, wherein R5 and R6 represent H, hydroxyl, C1-C12 alkyl or C1-C2 hydroxyalkyl, the alkyl glycol aryl ether or derivatives thereof are ethylene glycol monophenyl ether, propylene glycol monophenyl ether, iso-propylene glycol monophenyl ether, diethylene glycol monophenyl ether, dipropylene glycol monophenyl ether, di-iso-propylene glycol monophenyl ether, ethylene glycol monobenzyl ether, propylene glycol monobenzyl ether, propylene diphenyl ether, iso-propylene glycol diphenyl ether, diethylene glycol diphenyl ether, dipropylene glycol diphenyl ether, di-iso-propylene glycol diphenyl ether, ethylene glycol dibenzyl ether or propylene dibenzyl ether. The inventive cleaning composition with low etching performance can be used for removing photoresist (light resistance) and other residue on the metal, metal alloy or dielectric substrate, meanwhile has lower etching speed to the silica, metal such as copper and low k material, and has good application prospect in the micro-electronics field such as semiconductor wafer cleaning.