The invention relates to the technical field of solar cells, and specifically discloses an electrochemical treatment method for improving surface properties of a copper indium gallium selenide thin film. The method includes the steps of: after selenylation, placing the copper indium gallium selenide thin film in an electrochemical workstation, only connecting a Mo layer with a working electrode, and soaking in absolute ethyl alcohol to remove particle impurities; preparing a treatment solution which is a mixed solution of sulfite, metal sulfide and deionized water with a pH value of 8 to 14; and applying an electrical signal which is any one of a cyclic voltammetry electrical signal, constant voltage electrical signal, constant current electrical signal, pulse voltage electrical signal or pulse current electrical current, taking out the copper indium gallium selenide thin film after 1 to 600 seconds, using the deionized water to wash, and drying with high-purity nitrogen. The method provided by the invention can effectively dissolve protrusions on the surface of the thin film, improves the roughness of the surface of the thin film, removes a secondary phase of the surface, optimizes the surface quality of the thin film, is environment-friendly, and facilitates industrial promotion.